Room-temperature electroluminescence in the InAsSbP/InAs0.95Sb0.05/InAsSbP single quantum well von Moiseev, K.D., Ivanov, E.V., Romanov, V.V.

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Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution von MOISEEV, K. D, ROMANOV, V. V, VORONINA, T. I, LAGUNOVA, T. S, MIKHAILOVA, M. P, YAKOVLEV, Yu. P

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Optical “visualization” of Pythagorean triples and electrostatic multipoles in quantum dash von Baghdasaryan, D.A., Kazaryan, E.M., Sarkisyan, H.A., Moiseev, K.D.

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Electronic properties of a single heterojunction in InSb/InAs quantum dot system von Dement’ev, P.A., Moiseev, K.D.

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Rearrangement of Electroluminescence Spectra in Type-II n-InAs/n-InAsSbP Heterostructures von Romanov, V. V., Ivanov, E. V., Moiseev, K. D.

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Nanoheterostructures with InSb quantum dashes inserted in the InAs unipolar matrix von Moiseev, K.D., Romanov, V.V., Dement׳ev, P.A., Ivanov, E.V.

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TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface von Bert, N.A., Nevedomsky, V.N., Dement’ev, P.A., Moiseev, K.D.

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Features of an InAsSbP epilayer formation on an InAs support by metalorganic vapor phase epitaxy von Moiseev, K. D., Romanov, V. V., Kudryavtsev, Yu. A.

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On the delta-type doping of GaAs-based heterostructures with manganese compounds von Moiseev, K. D., Nevedomsky, V. N., Kudriavtsev, Yu, Escobosa-Echavarria, A., Lopez-Lopez, M.

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On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate von Romanov, V. V., Baidakova, M. V., Moiseev, K. D.

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Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth von Romanov, V. V., Dement’ev, P. A., Moiseev, K. D.

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Charge transfer features and ferromagnetic order in semiconductor heterostructures [delta]-doped with manganese von Lugovykh, A.M, Charikova, T.B, Okulov, V.I, Moiseev, K.D, Kudryavtsev, Yu. A

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High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in n-InAs matrix von Romanov, V. V., Ivanov, E. V., Moiseev, K. D.

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Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy von Parkhomenko, Ya. A., Dement’ev, P. A., Moiseev, K. D.

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Specific features of nanosize object formation in an InSb/InAs system by metal-organic vapor-phase epitaxy von Romanov, V. V., Dement’ev, P. A., Moiseev, K. D.

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Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature von Grigoryev, M. M., Ivanov, E. V., Moiseev, K. D.

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Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix von Parkhomenko, Ya. A., Ivanov, E. V., Moiseev, K. D.

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Two-color luminescence from a single type-II InAsSbP/InAs heterostructure von Grigoryev, M. M., Alekseev, P. A., Ivanov, E. V., Moiseev, K. D.

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InSb quantum dots and quantum rings on InAs-rich surface von Moiseev, K.D., Parkhomenko, Ya.P., Gushchina, E.A., Kizhaev, S.S., Mikhailova, M.P.

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Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields von Parfeniev, R.V., Moiseev, K.D., Berezovets, V.A., Averkiev, N.S., Mikhailova, M.P., Nizhankovskii, V.I., Kaczorowski, D.

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