Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs von Yearsley, J. D., Lin, J. C., Hwang, E., Datta, S., Mohney, S. E.

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Diameter-Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes von Bogart, T. E., Dey, S., Lew, K.-K., Mohney, S. E., Redwing, J. M.

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Measuring the specific contact resistance of contacts to semiconductor nanowires von Mohney, S.E., Wang, Y., Cabassi, M.A., Lew, K.K., Dey, S., Redwing, J.M., Mayer, T.S.

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Growth of Magneto-optically Active (Zn,Mn)Se Nanowires von Cooley, B. J, Clark, T. E, Liu, B. Z, Eichfeld, C. M, Dickey, E. C, Mohney, S. E, Crooker, S. A, Samarth, N

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An investigation into the early stages of oxide growth on gallium nitride von Wolter, S.D, DeLucca, J.M, Mohney, S.E, Kern, R.S, Kuo, C.P

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Extracting the Schottky barrier height from axial contacts to semiconductor nanowires von Sarpatwari, K., Dellas, N.S., Awadelkarim, O.O., Mohney, S.E.

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Characterization of low-resistance ohmic contacts to n - and p -type InGaAs von Lin, J. C., Yu, S. Y., Mohney, S. E.

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Characterization of tungsten-nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC von Kragh-Buetow, K C, Okojie, R S, Lukco, D, Mohney, S E

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Improved Stability of Pd/Ti Contacts to p-Type SiC Under Continuous DC and Pulsed DC Current Stress von Downey, B. P., Mohney, S. E., Flemish, J. R.

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Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaN von Luther, B. P., Mohney, S. E., Jackson, T. N., Asif Khan, M., Chen, Q., Yang, J. W.

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V/Al/Pt/Au Ohmic contact to n -AlGaN/GaN heterostructures von Schweitz, K. O., Wang, P. K., Mohney, S. E., Gotthold, D.

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Effects of barrier height inhomogeneities on the determination of the Richardson constant von Sarpatwari, K., Mohney, S. E., Awadelkarim, O. O.

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X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride von Wolter, S. D., Luther, B. P., Waltemyer, D. L., Önneby, C., Mohney, S. E., Molnar, R. J.

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Silicide formation in contacts to Si nanowires von Dellas, N. S., Schuh, C. J., Mohney, S. E.

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Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N von WANG, J. H, MOHNEY, S. E, WANG, S. H, CHOWDHURY, U, DUPUIS, R. D

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Studies of mist deposition for the formation of quantum dot CdSe films von Price, S C, Shanmugasundaram, K, Ramani, S, Zhu, T, Zhang, F, Xu, J, Mohney, S E, Zhang, Q, Kshirsagar, A, Ruzyllo, J

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Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC von Crofton, J., Mohney, S.E., Williams, J.R., Isaacs-Smith, T.

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Influence of oxygen on the activation of p -type GaN von Hull, B. A., Mohney, S. E., Venugopalan, H. S., Ramer, J. C.

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Ta–Ru–N diffusion barriers for high-temperature contacts to p-type SiC von Eichfeld, C.M., Horsey, M.A., Mohney, S.E., Adedeji, A.V., Williams, J.R.

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Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes von Sarpatwari, K., Awadelkarim, O. O., Allen, M. W., Durbin, S. M., Mohney, S. E.

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