Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors von Bebiche, S., Cisneros-Perez, P. A., Mohammed-Brahim, T., Harnois, M., Rault-Berthelot, J., Poriel, C., Jacques, E.

Volltext

Dependence of photovoltaic parameters on grain size and density of states in n +–i–p + and p +–i–n + polycrystalline silicon solar cells von Zebentout, B., Benamara, Z., Mohammed-Brahim, T.

Volltext

Microcrystalline silicon: Strain gauge and sensor arrays on flexible substrate for the measurement of high deformations von Kervran, Y., De Sagazan, O., Crand, S., Coulon, N., Mohammed-Brahim, T., Brel, O.

Volltext

Top-gate microcrystalline silicon TFTs processed at low temperature (<200 °C) von Saboundji, A., Coulon, N., Gorin, A., Lhermite, H., Mohammed-Brahim, T., Fonrodona, M., Bertomeu, J., Andreu, J.

Volltext

Low temperature amorphous and nanocrystalline silicon thin film transistors deposited by Hot-Wire CVD on glass substrate von Fonrodona, M., Soler, D., Escarré, J., Villar, F., Bertomeu, J., Andreu, J., Saboundji, A., Coulon, N., Mohammed-Brahim, T.

Volltext

Deposition temperature effects on the characteristics of a-Si:H deposited by pulsed DC magnetron sputtering von Cherfi, R., Abdelmoumene, A., Kechouane, M., Rahal, A., Aoucher, M., Mohammed-Brahim, T.

Volltext

The annealing temperature effect on the electrical properties of boron-doped hydrogenated amorphous silicon a-Si:H(B) von Khelifati, N., Tata, S., Rahal, A., Cherfi, R., Fedala, A., Kechouane, M., Mohammed-Brahim, T.

Volltext

Study of mechanical stability of suspended bridge devices used as pH sensors von Bendriaa, F., Le Bihan, F., Salaün, A.C., Mohammed-Brahim, T., Bonnaud, O.

Volltext

Thin film transistors on large single crystalline regions of silicon induced by cw laser crystallization von Saboundji, A., Mohammed-Brahim, T., Andrä, G., Bergmann, J., Falk, F.

Volltext

Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts von Girard, A., Coulon, N., Cardinaud, C., Mohammed-Brahim, T., Geneste, F.

Volltext

SiGe derivatization by spontaneous reduction of aryl diazonium salts von Girard, A., Geneste, F., Coulon, N., Cardinaud, C., Mohammed-Brahim, T.

Volltext

Decreasing the thickness of the active layer of microcrystalline silicon TFTs von Belarbi, K., Kandoussi, K., Souleiman, I., Simon, C., Coulon, N., Mohammed-Brahim, T.

Volltext

Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors von Pichon, L., Mercha, A., Carin, R., Bonnaud, O., Mohammed-Brahim, T., Helen, Y., Rogel, R.

Volltext

Behavior of the parameters of microcrystalline silicon TFTs under mechanical strain von Janfaoui, S., Simon, C., Coulon, N., Mohammed-Brahim, T.

Volltext

Excimer laser annealing of microcrystalline silicon von Pier, T., Kandoussi, K., Simon, C., Coulon, N., Mohammed-Brahim, T., Lhermite, H.

Volltext

Modeling the high pH sensitivity of Suspended Gate Field Effect Transistor (SGFET) von Salaün, A.-C., Le Bihan, F., Mohammed-Brahim, T.

Volltext

μc-Si thin film transistors with very thin active layer von Samb, M.L., Jacques, E., Belarbi, K., Coulon, N., Mohammed-Brahim, T.

Volltext

Nanocrystalline silicon TFT process using silane diluted in argon–hydrogen mixtures von Kandoussi, K., Simon, C., Coulon, N., Belarbi, K., Mohammed-Brahim, T.

Volltext

High mobility thin film transistors by Nd:YVO4-laser crystallization von Helen, Y., Dassow, R., Nerding, M., Mourgues, K., Raoult, F., Köhler, J.R., Mohammed-Brahim, T., Rogel, R., Bonnaud, O., Werner, J.H., Strunk, H.P.

Volltext

Highly controllable dual-gate microcrystalline silicon thin film transistor processed at low temperature ( T < 180 °C) von Kandoussi, K., Jacques, E., Coulon, N., Simon, C., Mohammed-Brahim, T.

Volltext