Electrical properties of Al foil/n-4H-SiC Schottky junctions fabricated by surface-activated bonding von Morita, Sho, Liang, Jianbo, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yoshitaka, Shigekawa, Naoteru

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Ultra-Thick Metal Ohmic Contact Fabrication Using Surface Activated Bonding von Liang, Jianbo, Furuna, Katuya, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yositaka, Shigekawa, Naoteru

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Effect of annealing ambient on SiGe layer formation using Al–Ge paste for III–V solar cell application von Suzuki, Shota, Matsubara, Moeko, Minamiyama, Hideaki, Dhamrin, Marwan, Uraoka, Yukiharu

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In-situ X-ray diffraction analysis of SiGe liquid phase growth on Si using Al–Ge paste von Suzuki, Shota, Matsubara, Moeko, Minamiyama, Hideaki, Dhamrin, Marwan, Fujiwara, Yasufumi, Uraoka, Yukiharu

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A Novel Approach of Utilizing Mechanically Flexible SiC Substrate to Grow Crack-Free AlN Bulk Crystal by Thermal Strain Relaxation Functionality von Dojima, Daichi, Kaneko, Tadaaki, Minamiyama, Hideaki, Matsubara, Moeko

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SiGe Epitaxial Growth on Si Substrate Using Al-Ge Paste von Suzuki, Shota, Matsubara, Moeko, Minamiyama, Hideaki, Dhamrin, Marwan, Uraoka, Yukiharu

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Screen-printing SiGe layer on Si substrate for III-V solar cell application von Suzuki, Shota, Matsubara, Moeko, Tsuji, Kosuke, Kuroki, Takashi, Minamiyama, Hideaki, Dhamrin, Marwan, Uraoka, Yukiharu

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Fabrication of group IV semiconductor alloys on Si substrate applying Al paste with screen-printing von Nakahara, Masahiro, Matsubara, Moeko, Suzuki, Shota, Dhamrin, Marwan, Miyamoto, Satoru, Hainey, Mel Forrest, Usami, Noritaka

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Fabrication of Si1-xSnx Layer on Si Substrate by Screen-Printing of Al-Sn Paste von Nakahara, Masahiro, Matsubara, Moeko, Tsuji, Kosuke, Suzuki, Shota, Dhamrin, Marwan, Usami, Noritaka

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Fabrication of Si 1-x Sn x Layer on Si Substrate by Screen-Printing of Al-Sn Paste von Nakahara, Masahiro, Matsubara, Moeko, Tsuji, Kosuke, Suzuki, Shota, Dhamrin, Marwan, Usami, Noritaka

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Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices von Liang, Jianbo, Furuna, Katsuya, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yoshitaka, Shigekawa, Naoteru

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Direct Solvothermal Formation of Nanocrystalline TiO2 on Porous SiO2 Adsorbent and Photocatalytic Removal of Nitrogen Oxides in Air over TiO2–SiO2 Composites von Kominami, Hiroshi, Yukishita, Kimiyo, Kimura, Takashi, Matsubara, Moeko, Hashimoto, Keiji, Kera, Yoshiya, Ohtani, Bunsho

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(Digital Presentation) SiGe Epitaxial Growth on Si Substrate Using Al-Ge Paste von Suzuki, Shota, Matsubara, Moeko, Minamiyama, Hideaki, Dhamrin, Marwan, Uraoka, Yukiharu

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Realization of polyimide / Al junction using sputtering effects of Ar fast atom beam von Akazawa, Hideyuki, Jianbo, Liang, Moeko, Matsubara, Marwan, Dhamrin, Yoshitaka, Nishio, Naoteru, Shigekawa

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Evaluation of Al foil/n+-Si/n-GaN contacts by surface activated bonding von Morita, Sho, Nishimura, Takuya, Liang, Jianbo, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yoshitaka, Shigekawa, Naoteru

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Impacts of annealing on interfaces of Al foil / Si junctions by using surface activated bonding von Furuna, Katsuya, Liang, Jianbo, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yoshitaka, Shigekawa, Naoteru

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Electrical Characteristics of Al foil/Si junctions by surface activated bonding method von Furuna, Katsuya, Liang, Jianbo, Matsubara, Moeko, Nishio, Yoshitaka, Shigekawa, Naoteru

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Electrical characteristics of Cu foil/Si junctions by using surface activated bonding von Furuna, Katsuya, Liang, Jianbo, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yoshitaka, Shigekawa, Naoteru

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Electrical Properties of Al-Foil/Wide-Gap-Semiconductor Junctions Fabricated by Surface-Activated Bonding von Morita, Sho, Nishimura, Takuya, Liang, Jianbo, Matsubara, Moeko, Dhamrin, Marwan, Nishio, Yoshitaka, shigekawa, Naoteru

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METHOD FOR PRODUCING ALUMINUM NITRIDE SUBSTRATE, ALUMINUM NITRIDE SUBSTRATE, AND METHOD FOR SUPPRESSING INTRODUCTION OF DISLOCATION INTO ALUMINUM NITRIDE GROWTH LAYER von MURAKAWA, Taku, MATSUBARA, Moeko, DOJIMA, Daichi, NISHIO, Yoshitaka, KANEKO, Tadaaki

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