I–V Characteristics of High-Power Diode Structures with Sharply Asymmetric Injection Ability of the Emitters von Tandoev, A. G., Mnatsakanov, T. T., Yurkov, S. N.

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High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the I–V Characteristic von Tandoev, A. G., Mnatsakanov, T. T., Yurkov, S. N.

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S-Shaped I–V Characteristics of High-Power Schottky Diodes at High Current Densities von Tandoev, A. G., Mnatsakanov, T. T., Yurkov, S. N.

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Multidimensional dU/dT Effect in High-Power Thyristors von Yurkov, S. N., Mnatsakanov, T. T., Tandoev, A. G.

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Theoretical Analysis of the Effect of dU/dt in 4H–SiC Thyristor Structures von Yurkov, S. N., Mnatsakanov, T. T., Tandoev, A. G.

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Specific features of switch-on processes in high-voltage (18 kV class) optically triggered 4H-SiC thyristors von Mnatsakanov, T T, Yurkov, S N, Levinshtein, M E, Cheng, L, Palmour, J W

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Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors von Yurkov, S N, Mnatsakanov, T T, Levinshtein, M E, Cheng, L, Palmour, J W

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Carrier mobility model for GaN von Mnatsakanov, Tigran T, Levinshtein, Michael E, Pomortseva, Lubov I, Yurkov, Sergey N, Simin, Grigory S, Asif Khan, M

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On the limit of the injection ability of silicon p+–n junctions as a result of fundamental physical effects von Mnatsakanov, T. T., Levinshtein, M. E., Shuman, V. B., Seredin, B. M.

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Analytical and numerical studies of p+-emitters in silicon carbide bipolar devices von Levinshtein, M E, Mnatsakanov, T T, Agarwal, A K, Palmour, J W

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Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors von Yurkov, S. N., Mnatsakanov, T. T., Levinshtein, M. E., Tandoev, A. G., Palmour, J. W.

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Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers von Mnatsakanov, T. T., Tandoev, A. G., Levinshtein, M. E., Yurkov, S. N., Palmour, J. W.

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Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors von Levinshtein, M E, Rumyantsev, S L, Shur, M S, Mnatsakanov, T T, Yurkov, S N, Zhang, Q J, Agarwal, A K, Cheng, L, Palmour, J W

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Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structures von Shuman, V B, Mnatsakanov, T T, Levinshtein, M E, Tandoev, A G, Yurkov, S N, Palmour, J W

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"Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes von Levinshtein, M.E., Mnatsakanov, T.T., Ivanov, P., Palmour, J.W., Rumyantsev, S.L., Singh, R., Yurkov, S.N.

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Self-heating and loss of thermal stability under a single current surge pulse in high-voltage 4H-SiC rectifier diodes von Levinshtein, M E, Mnatsakanov, T T, Ivanov, P A, Palmour, J W, Das, M K, Hull, B A

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Specific features of quasineutral carrier transport modes in semiconductors and semiconductor structures von Mnatsakanov, T T, Tandoev, A G, Yurkov, S N, Levinshtein, M E

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Fundamental physical limitations on the blocking voltage of SiC rectifier diodes von Mnatsakanov, T T, Levinshtein, M E, Pomortseva, L I, Palmour, J W

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Carrier mobility model for simulation of SiC-based electronic devices von Mnatsakanov, T T, Levinshtein, M E, Pomortseva, L I, Yurkov, S N

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On the transport equations in popular commercial device simulators von Levinshtein, M.E., Mnatsakanov, T.T.

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