A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling von Fukuda, K., Mori, T., Mizubayashi, W., Morita, Y., Tanabe, A., Masahara, M., Yasuda, T., Migita, S., Ota, H.

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CVD Growth Technologies of Layered MX2 Materials for Real LSI Applications-Position and Growth Direction Control and Gas Source Synthesis von Irisawa, T., Endo, T., Miyata, Y., Okada, N., Mizubayashi, W., Mori, T., Chang, W.-H., Koga, K., Ando, A., Endo, K., Sasaki, S.

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AFM measurement of atomic-scale Si surface etching by active oxidation von Morita, Y., Migita, S., Mizubayashi, W., Ota, H.

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Analytic model of direct tunnel current through ultrathin gate oxides von Khairurrijal, Mizubayashi, W., Miyazaki, S., Hirose, M.

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Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors von Mizubayashi, W., Fukuda, K., Mori, T., Endo, K., Liu, Y.X., Matsukawa, T., O’uchi, S., Ishikawa, Y., Migita, S., Morita, Y., Tanabe, A., Tsukada, J., Yamauchi, H., Masahara, M., Ota, H.

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Exact control of junction position using epitaxial NiSi2 crystallization in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors von Mizubayashi, W., Migita, S., Morita, Y., Ota, H.

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(Invited) Charge Trapping Type SOI-FinFET Flash Memory von Liu, Yongxun, Nabatame, T, Matsukawa, T, Endo, K, O'uchi, S, Tsukada, J, Yamauchi, H, Ishikawa, Y, Mizubayashi, W, Morita, Y, Migita, S, Ota, H, Chikyow, T, Masahara, M

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Unified analytic model of direct and Fowler–Nordheim tunnel currents through ultrathin gate oxides von Khairurrijal, Mizubayashi, W., Miyazaki, S., Hirose, M.

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Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current von Koh, M., Mizubayashi, W., Iwamoto, K., Murakami, H., Ono, T., Tsuno, M., Mihara, T., Shibahara, K., Miyazaki, S., Hirose, M.

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Advantages of HfAlON gate dielectric film for advanced low power CMOS application von Toriumi, A., Iwamoto, K., Ota, H., Kadoshima, M., Mizubayashi, W., Nabatame, T., Ogawa, A., Tominaga, K., Horikawa, T., Satake, H.

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Re-examination of Flat-Band Voltage Shift for High-k MOS Devices von Iwamoto, K., Ito, H., Kamimuta, Y., Watanabe, Y., Mizubayashi, W., Migita, S., Morita, Y., Takahashi, M., Ito, H., Ota, H., Nabatame, T., Toriumi, A.

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Quantification of Spin Drift in Devices with a Heavily Doped Si Channel von Spiesser, A., Fujita, Y., Saito, H., Yamada, S., Hamaya, K., Mizubayashi, W., Endo, K., Yuasa, S., Jansen, R.

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Statistical analysis of soft and hard breakdown in 1.9-4.8-nm-thick gate oxides von Mizubayashi, W., Yoshida, Y., Murakami, H., Miyazaki, S., Hirose, M.

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Fundamental limit of gate oxide thickness scaling in advanced MOSFETs von Hirose, M, Koh, M, Mizubayashi, W, Murakami, H, Shibahara, K, Miyazaki, S

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Decomposition of On-Current Variability of nMOS FinFETs for Prediction Beyond 20 nm von Matsukawa, T., Liu, Y., O'uchi, S., Endo, K., Tsukada, J., Yamauchi, H., Ishikawa, Y., Ota, H., Migita, S., Morita, Y., Mizubayashi, W., Sakamoto, K., Masahara, M.

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Suppression of threshold voltage variability of double-gate fin field-effect transistors using amorphous metal gate with uniform work function von Matsukawa, T., Liu, Y. X., Mizubayashi, W., Tsukada, J., Yamauchi, H., Endo, K., Ishikawa, Y., O'uchi, S., Ota, H., Migita, S., Morita, Y., Masahara, M.

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Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance von Hayashida, T., Endo, K., Liu, Y., O'uchi, S., Matsukawa, T., Mizubayashi, W., Migita, S., Morita, Y., Ota, H., Hashiguchi, H., Kosemura, D., Kamei, T., Tsukada, J., Ishikawa, Y., Yamauchi, H., Ogura, A., Masahara, M.

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Highly V sub(t) tunable and low variability triangular fin-channel MOSFETs on SOTB von Liu, Y X, Matsukawa, T, Endo, K, O'uchi, S, Tsukada, J, Yamauchi, H, Ishikawa, Y, Mizubayashi, W, Morita, Y, Migita, S, Ota, H, Masahara, M

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CVD Growth Technologies of Layered MX 2 Materials for Real LSI Applications—Position and Growth Direction Control and Gas Source Synthesis von Irisawa, T., Endo, T., Miyata, Y., Okada, N., Mizubayashi, W., Mori, T., Chang, W.-H., Koga, K., Ando, A., Endo, K., Sasaki, S.

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Highly Vt tunable and low variability triangular fin-channel MOSFETs on SOTB von Liu, Y.X., Matsukawa, T., Endo, K., O’uchi, S., Tsukada, J., Yamauchi, H., Ishikawa, Y., Mizubayashi, W., Morita, Y., Migita, S., Ota, H., Masahara, M.

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