Calculation of electronic structure and photoabsorption spectra of monosilane molecules SiH4, SiF4, and SiCl4 von ISHIKAWA, H, FUJIMA, K, ADACHI, H, MIYAUCHI, E, FUJII, T

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Cleaning of MBE GaAs substrates by hydrogen radical beam irradiation von TAKAMORI, A, SUGATA, S, ASAKAWA, K, MIYAUCHI, E, HASHIMOTO, H

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Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling von Tackeuchi, Atsushi, Inata, Tsuguo, Muto, Shunichi, Miyauchi, Eizo

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Maskless ion implantation technology for III–V compound semiconductors von Miyauchi, Eizo, Hashimoto, Hisao

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Growth and characterization of GaAs0.5Sb0.5 lattice-matched to InP by molecular beam epitaxy von NAKATA, Y, FUJII, T, SANDHU, A, SUGIYAMA, Y, MIYAUCHI, E

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Ion species and energy control of finely focused FIBs for maskless in situ microfabrication processes von Miyauchi, Eizo, Arimoto, Hiroshi, Kitada, Hideki

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Zn and Si ion emission from Au-Zn-Si LM ion source von ARIMOTO, H, MIYAUCHI, E, HASHIMOTO, H

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Dependene of Focused Ion Beam Intensity Profile on Ion Species at Several Orders of Magnitude below the Peak Intensity von Miyauchi, Eizo, Arimoto, Hiroshi, Morita, Tetsuo, Hashimoto, Hisao

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Focused Si ion implantation in GaAs von BAMBA, Y, MIYAUCHI, E, ARIMOTO, H, KURAMOTO, K, TAKAMORI, A, HASHIMOTO, H

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Alignment signal from a mark deformed by molecular beam epitaxial overgrowth for focused ion beam implantation von MORITA, T, TAKAMORI, A, ARIMOTO, H, MIYAUCHI, E, HASHIMOTO, H

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Alignment accuracy of focused ion beam implantation von MORITA, T, ARIMOTO, H, MIYAUCHI, E, HASHIMOTO, H

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Growth-interrupted interfaces in multilayer MBE growth of gallium arsenide von TAKAMORI, A, MIYAUCHI, E, ARIMOTO, H, BAMBA, Y, MORITA, T, HASHIMOTO, H

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Novel methods for measuring diameter of focused ion beam von MORITA, T, ARIMOTO, H, MIYAUCHI, E, HASHIMOTO, H

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Positional stability of focused ion beams von ARIMOTO, H, MORITA, T, MIYAUCHI, E, HASHIMOTO, H

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Novel method for measuring intensity distribution of focused ion beams von ARIMOTO, H, TAKAMORI, A, MIYAUCHI, E, HASHIMOTO, H

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TERMINAL DEVICE, CREATION PRODUCTION METHOD, CREATION PRODUCTION PROGRAM, VIRTUAL TRAVEL DEVICE, VIRTUAL TRAVEL SYSTEM von YAMAMOTO KEN, MIYAUCHI EIZO

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Photon stimulated desorption from finely polished metals irradiated with synchrotron radiation von MIYAUCHI, E, OKAMURA, S, TAGUCHI, T, GOTO, S, HISATSUGU, T

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Thermal diffusion of buried beryllium and silicon layer in GaAs doped by focused ion beam implantation von MORITA, T, KOBAYASHI, J, TAKAMORI, T, TAKAMORI, A, MIYAUCHI, E, HASHIMOTO, H

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Emission stability of Au-Si-Be LM ion source in various gas environments von ARIMOTO, H, MIYAUCHI, E, HASHIMOTO, H

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Fabrication of Submicron Grating Patterns Usinc Compositional Disordering of AlGaAs-GaAs Superlattices by Focused Si Ion Beam Implantation von Ishida, Koji, Miyauchi, Eizo, Morita, Tetsuo, Takamori, Takeshi, Fukunaga, Toshiaki, Hashimoto, Hisao, Nakashima, Hisao

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