Annealing effects on single Shockley faults in 4H-SiC von Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Kamata, Isaho, Nakamura, Tomonori, Nakayama, Koji, Ishii, Ryousuke, Sugawara, Yoshitaka

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Migration of Dislocations in 4H-SiC Epilayers during the Ion Implantation Process von Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Kamata, Isaho, Nagano, Masahiro, Storasta, L.

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Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates von Ishii, R., Sugawara, Yoshitaka, Kamata, Isaho, Asano, Katsunori, Nakayama, Koji, Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Izumi, Kunikaza, Nakamura, Tomonori

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Growth of Thick 4H–SiC(0001) Epilayers and Reduction of Basal Plane Dislocations von Tsuchida, Hidekazu, Kamata, Isaho, Miyanagi, Toshiyuki, Nakamura, Tomonori, Nakayama, Koji, Ishii, Ryousuke, Sugawara, Yoshitaka

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Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers von Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Kamata, Isaho, Nakamura, Tomonori

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Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging von Ishii, R., Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Sugawara, Yoshitaka, Kamata, Isaho, Nakayama, Koji

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Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy von Ishii, R., Sugawara, Yoshitaka, Kamata, Isaho, Nakayama, Koji, Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Nakamura, Tomonori

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SEMICONDUCTOR UNIT AND SEMICONDUCTOR DEVICE USING THE SAME von MIYANAGI, Toshiyuki

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Annealing effects on single Shockley faults in 4 H - Si C von Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Kamata, Isaho, Nakamura, Tomonori, Nakayama, Koji, Ishii, Ryousuke, Sugawara, Yoshitaka

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Hot-Wall CVD Growth of 4H-SiC Using Si2Cl6+C3H8+H2 System von Miyanagi, Toshiyuki, Nishino, Shigehiro

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Semiconductor device von MIYANAGI TOSHIYUKI

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A 4.15 kV 9.07-mΩ . cm2 4H-SiC Schottky-Barrier diode using Mo contact annealed at high temperature von NAKAMURA, Tomonori, MIYANAGI, Toshiyuki, KAMATA, Isaho, JIKIMOTO, Tamotsu, TSUCHIDA, Hidekazu

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Semiconductor unit and semiconductor device using the same von MIYANAGI TOSHIYUKI

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SEMICONDUCTOR DEVICE von MIYANAGI TOSHIYUKI

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Semiconductor device von MIYANAGI TOSHIYUKI

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Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes von Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Kamata, Isaho, Nakamura, Tomonori

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SEMICONDUCTOR UNIT AND SEMICONDUCTOR DEVICE USING SAME von MIYANAGI, TOSHIYUKI

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SEMICONDUCTOR UNIT AND SEMICONDUCTOR DEVICE USING THE SAME von MIYANAGI, TOSHIYUKI

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SEMICONDUCTOR UNIT AND SEMICONDUCTOR DEVICE USING THE SAME von MIYANAGI TOSHIYUKI

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8.3 kV 4H-SiC PiN Diode on (000-1) C-Face with Small Forward Voltage Degradation von Ishii, R., Sugawara, Yoshitaka, Kamata, Isaho, Asano, Katsunori, Nakayama, Koji, Miyanagi, Toshiyuki, Tsuchida, Hidekazu, Nakamura, Tomonori

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