Few-layer HfS2 transistors von Kanazawa, Toru, Amemiya, Tomohiro, Ishikawa, Atsushi, Upadhyaya, Vikrant, Tsuruta, Kenji, Tanaka, Takuo, Miyamoto, Yasuyuki

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Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction von Eissa, Moataz, Mitarai, Takuya, Amemiya, Tomohiro, Miyamoto, Yasuyuki, Nishiyama, Nobuhiko

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Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunneling FET by UV-O3 treatment von Zhang, Wenlun, Kanazawa, Toru, Miyamoto, Yasuyuki

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High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers von Kotani, Junji, Makiyama, Kozo, Ohki, Toshihiro, Ozaki, Shiro, Okamoto, Naoya, Minoura, Yuichi, Sato, Masaru, Nakamura, Norikazu, Miyamoto, Yasuyuki

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Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer von MIYAMOTO, Yasuyuki, GOTOW, Takahiro

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Regrown source/drain in InGaAs multi-gate MOSFETs von Miyamoto, Yasuyuki, Kanazawa, Toru, Kise, Nobukazu, Kinoshita, Haruki, Ohsawa, Kazuto

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Interspecific variation in wildlife responses to cattle, swine and chicken feed in the forests surrounding poultry farms von SAKAMOTO, Shinsuke H., MIYAMOTO, Yasuyuki, UKYO, Rina, IEIRI, Seiji

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Electric Field Modulation in the Channel by Lateral Thickness Distribution of High-k Films Formed on GaN HEMTs to Improve Breakdown Voltage von Miyamoto, Yasuyuki, Makiyama, Kozo

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Electric Field Modulation in the Channel by Lateral Thickness Distribution of High- \textit Films Formed on GaN HEMTs to Improve Breakdown Voltage von Miyamoto, Yasuyuki, Makiyama, Kozo

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Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor von Zhang, Wenlun, Netsu, Seiko, Kanazawa, Toru, Amemiya, Tomohiro, Miyamoto, Yasuyuki

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InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope von Yukimachi, Atsushi, Miyamoto, Yasuyuki

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Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation von UPADHYAYA, Vikrant, KANAZAWA, Toru, MIYAMOTO, Yasuyuki

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Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2 von Kanazawa, Toru, Amemiya, Tomohiro, Upadhyaya, Vikrant, Ishikawa, Atsushi, Tsuruta, Kenji, Tanaka, Takuo, Miyamoto, Yasuyuki

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Type-II HfS2/MoS2 Heterojunction Transistors von NETSU, Seiko, KANAZAWA, Toru, UWANNO, Teerayut, AMEMIYA, Tomohiro, NAGASHIO, Kosuke, MIYAMOTO, Yasuyuki

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Effects of hypoxia and glucose-removal condition on muscle contraction of the smooth muscles of porcine urinary bladder von NAGAI, Yuta, KANEDA, Takeharu, MIYAMOTO, Yasuyuki, NURUKI, Takaomi, KANDA, Hidenori, URAKAWA, Norimoto, SHIMIZU, Kazumasa

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Reduction of Output Conductance in Vertical InGaAs Channel Metal--Insulator--Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region von Saito, Hisashi, Miyamoto, Yasuyuki

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Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique von Yamanaka, Ryota, Kanazawa, Toru, Yagyu, Eiji, Miyamoto, Yasuyuki

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Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs von Ohashi, Kazumi, Fujimatsu, Motohiko, Iwata, Shinjiro, Miyamoto, Yasuyuki

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A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETs von Netsu, Seiko, Hellenbrand, Markus, Zota, Cezar B., Miyamoto, Yasuyuki, Lind, Erik

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Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterior... von Lin, Wenbo, Iwata, Shinjiro, Fukuda, Koichi, Miyamoto, Yasuyuki

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