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  1. 1
    (Invited) Expansion Behavior of Single BPD Loop Causing Stacking Fault Multiplication in 180 Μm Thick 4H-SiC Epitaxial Layers

    (Invited) Expansion Behavior of Single BPD Loop Causing Stacking Fault Multiplication in 180 Μm Thick 4H-SiC Epitaxial Layers von Mahadik, Nadeemullah, Scheiman, David A, Mittereder, Jeff A, Stahlbush, Robert E, Kim, Youngsang, Owen, Michael W, Chen, Zeyu, Raghothamachar, Balaji, Dudley, Michael


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  2. 2
    Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC

    Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC von Tucker, J.B., Rao, M.V., Papanicolaou, N.A., Mittereder, J., Elasser, A., Clock, A.W., Ghezzo, M., Holland, O.W., Jones, K.A.


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  3. 3
    AlGaN/GaN Heterostructure Field Effect Transistors Fabricated on 100MM Si/POLY SiC Composite Substrates

    AlGaN/GaN Heterostructure Field Effect Transistors Fabricated on 100MM Si/POLY SiC Composite Substrates von Roberts, John, Rajagopal, Pradeep, Cook, James, Therrien, Robert, Piner, Edwin, Linthicum, Kevin, Hobart, K., Twigg, Mark, Mittereder, Jeff, Binari, Steve


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