AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization von Storm, D.F., Katzer, D.S., Roussos, J.A., Mittereder, J.A., Bass, R., Binari, S.C., Hanser, D., Preble, E.A., Evans, K.R.

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Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress von Mittereder, J. A., Binari, S. C., Klein, P. B., Roussos, J. A., Katzer, D. S., Storm, D. F., Koleske, D. D., Wickenden, A. E., Henry, R. L.

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Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates von STORM, D. F, ROUSSOS, J. A, KATZER, D. S, MITTEREDER, J. A, BASS, R, BINARI, S. C, HANSER, D, PREBLE, E. A, EVANS, K

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Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications von Storm, D.F., Katzer, D.S., Mittereder, J.A., Binari, S.C., Shanabrook, B.V., Xu, X., McVey, D.S., Vaudo, R.P., Brandes, G.R.

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Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates von Storm, D.F., Katzer, D.S., Roussos, J.A., Mittereder, J.A., Bass, R., Binari, S.C., Zhou, Lin, Smith, David J., Hanser, D., Preble, E.A., Evans, K.R.

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Effective temperature measurements of AlGaN/GaN-based HEMT under various load lines using micro-Raman technique von Kim, Jihyun, Freitas, J.A., Mittereder, J., Fitch, R., Kang, B.S., Pearton, S.J., Ren, F.

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Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing von Papanicolaou, N. A., Rao, M. V., Mittereder, J., Anderson, W. T.

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Ion-implantation in bulk semi-insulating 4H–SiC von Rao, Mulpuri V., Tucker, Jesse B., Ridgway, M. C., Holland, O. W., Papanicolaou, N., Mittereder, J.

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Effectiveness of AlN encapsulant in annealing ion-implanted SiC von Handy, Evan M., Rao, Mulpuri V., Jones, K. A., Derenge, M. A., Chi, P. H., Vispute, R. D., Venkatesan, T., Papanicolaou, N. A., Mittereder, J.

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Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb von Ikossi, K, Goldenberg, M, Mittereder, J

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Cr/Al and Cr/Al/Ni/Au ohmic contacts to n -type GaN von Papanicolaou, N. A., Edwards, A., Rao, M. V., Mittereder, J., Anderson, W. T.

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Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation von Boos, J. B., Bennett, B. R., Kruppa, W., Park, D., Mittereder, J., Bass, R., Twigg, M. E.

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Ultra-high vacuum deposition and characterization of silicon nitride thin films von Katzer, D. S., Meyer, D. J., Storm, D. F., Mittereder, J. A., Bermudez, V. M., Cheng, S. F., Jernigan, G. G., Binari, S. C.

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Photoionisation spectroscopy of traps in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy von Klein, P.B., Mittereder, J.A., Binari, S.C., Roussos, J.A., Katzer, D.S., Storm, D.F.

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Transient thermal simulations of a three-dimensional unit cell in power control systems and high-power microwave devices von Buot, F.A, Mittereder, J.A, Anderson, W.T, Ioannou, D.E

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Quantitative measurement of channel temperature of GaAs devices for reliable life-time prediction von Mittereder, J.A., Roussos, J.A., Anderson, W.T., Ioannou, D.E.

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AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability von Boos, J.B, Bennett, B.R, Kruppa, W, Park, D, Mittereder, J, Chang, W, Turner, N.H

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Pseudomorphic high electron mobility transistor monolithic microwave integrated circuits reliability study von Anderson, W.T, Roussos, J.A, Mittereder, J.A, Ioannou, D.E, Moglestue, C

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Characteristics of planar n-p junction diodes made by double-implantations into 4H-SiC von Tucker, J.B., Rao, M.V., Papanicolaou, N.A., Mittereder, J., Elasser, A., Clock, A.W., Ghezzo, M., Holland, O.W., Jones, K.A.

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Reliability life-testing and failure-analysis of GaAs monolithic Ku-band driver amplifiers von Mittereder, J.A., Roussos, J.A., Christianson, K.A., Anderson, W.T.

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