High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process von Mitros, J.C., Chin-Yu Tsai, Shichijo, H., Kunz, M., Morton, A., Goodpaster, D., Mosher, D., Efland, T.R.

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Thickness dependence of stress-induced leakage currents in silicon oxide von Runnion, E.F., Gladstone, S.M., Scott, R.S., Dumin, D.J., Lie, L., Mitros, J.C.

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High-voltage drain extended MOS transistors for 0.18-[mu]m logic CMOS process von Mitros, J.C, Tsai, Chin-Yu, Shichijo, H, Kunz, M, Morton, A, Goodpaster, D, Mosher, D, Efland, T.R

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High-voltage drain extended MOS transistors for 0.18-/spl mu/m logic CMOS process von Mitros, J.C., Chin-Yu Tsai, Shichijo, H., Kunz, M., Morton, A., Goodpaster, D., Mosher, D., Efland, T.R.

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Empirical model of MOSFET breakdown voltages von Mitros, J.C.

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Thickness dependence of low-level leakages in thin oxides von Gladstone, S.M., Scott, R.S., Runnion, E.F., Hughes, T.W., Dumin, D.J., Mitros, J.C., Lie, L.

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Genome and transcriptome mechanisms driving cephalopod evolution von Albertin, Caroline B., Medina-Ruiz, Sofia, Mitros, Therese, Schmidbaur, Hannah, Sanchez, Gustavo, Wang, Z. Yan, Grimwood, Jane, Rosenthal, Joshua J. C., Ragsdale, Clifton W., Simakov, Oleg, Rokhsar, Daniel S.

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The gene for familial juvenile polyposis maps to chromosome 18q21 von Howe, J.R., Ringold, J.C., Summers, R.W., Mitros, F.A., Nishimura, D.Y., Stone, E.M.

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