Electrical TCAD Simulations of a Germanium pMOSFET Technology von Hellings, Geert, Eneman, Geert, Krom, Raymond, De Jaeger, B, Mitard, Jérôme, De Keersgieter, An, Hoffmann, Thomas, Meuris, Marc, De Meyer, Kristin

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On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs von Kobayashi, M, Mitard, J, Irisawa, T, Hoffmann, T, Meuris, M, Saraswat, K, Nishi, Y, Heyns, M

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A Fast and Accurate Method to Study the Impact of Interface Traps on Germanium MOS Performance von Hellings, Geert, Eneman, Geert, Mitard, Jérôme, Martens, Koen, Wei-E Wang, Hoffmann, Thomas, Meuris, Marc, De Meyer, Kristin

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Low-Frequency Noise Characterization of Strained Germanium pMOSFETs von Simoen, E., Mitard, J., De Jaeger, B., Eneman, G., Dobbie, A., Myronov, M., Whall, T. E., Leadley, D. R., Meuris, M., Hoffmann, T., Claeys, C.

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Quantification of Drain Extension Leakage in a Scaled Bulk Germanium PMOS Technology von Eneman, G., De Jaeger, B., Simoen, E., Brunco, D.P., Hellings, G., Mitard, J., De Meyer, K., Meuris, M., Heyns, M.M.

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Layout Scaling of Si1―xGex-Channel pFETs von ENEMAN, Geert, YAMAGUCHI, Shinpei, ORTOLLAND, Claude, TAKEOKA, Shinji, KOBAYASHI, Masaharu, WITTERS, Liesbeth, HIKAVYY, Andriy, MITARD, Jérôme, LOO, Roger, HOFFMANN, Thomas

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SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTI von Franco, J., Kaczer, B., Roussel, P. J., Mitard, J., Moonju Cho, Witters, L., Grasser, T., Groeseneken, G.

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Predictive and prospective calibrated TCAD to improve device performances in sub-20 nm gate length p-FinFETs von Eyben, Pierre, De Keersgieter, An, Matagne, Philippe, Chiarella, Thomas, Porret, Clément, Hikavyy, Andriy, Siew, Yong Kong, Goux, Ludovic, Mitard, Jérôme, Horiguchi, Naoto

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Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling von Crupi, F., Alioto, M., Franco, J., Magnone, P., Kaczer, B., Groeseneken, G., Mitard, J., Witters, L., Hoffmann, T. Y.

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Layout Scaling of \hbox\hbox \hbox pFETs von Eneman, G., Yamaguchi, S., Ortolland, C., Takeoka, S., Kobayashi, M., Witters, L., Hikavyy, A., Mitard, J., Loo, R., Hoffmann, T.

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs von Maji, D., Crupi, F., Amat, E., Simoen, E., De Jaeger, B., Brunco, D.P., Manoj, C.R., Rao, V.R., Magnone, P., Giusi, G., Pace, C., Pantisano, L., Mitard, J., Rodriguez, R., Nafria, M.

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Low-Resistance Titanium Contacts and Thermally Unstable Nickel Germanide Contacts on p-Type Germanium von Hao Yu, Schaekers, Marc, Schram, Tom, Aderhold, Wolfgang, Mayur, Abhilash J., Mitard, Jerome, Witters, Liesbeth, Barla, Kathy, Collaert, Nadine, Horiguchi, Naoto, Voon-Yew Thean, Aaron, De Meyer, Kristin

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Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs von Tyaginov, Stanislav, O’Sullivan, Barry, Chasin, Adrian, Rawal, Yaksh, Chiarella, Thomas, de Carvalho Cavalcante, Camila Toledo, Kimura, Yosuke, Vandemaele, Michiel, Ritzenthaler, Romain, Mitard, Jerome, Palayam, Senthil Vadakupudhu, Reifsnider, Jason, Kaczer, Ben

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Carrier transport in HfO2/metal gate MOSFETs : Physical insight into critical parameters von CASSE, Mikaël, THEVENOD, Laurent, BILLON, Thierry, MOUIS, Mireille, BOULANGER, Fabien, GUILLAUMOT, Bernard, TOSTI, Lucie, MARTIN, Francois, MITARD, Jérome, WEBER, Olivier, ANDRIEU, Francois, ERNST, Thomas, REIMBOLD, Gilles

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Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm von Choi, Seoyeon, Park, Dong Geun, Kim, Min Jung, Bang, Seain, Kim, Jungchun, Jin, Seunghee, Huh, Ki Seok, Kim, Donghyun, Mitard, Jerome, Han, Cheol E., Lee, Jae Woo

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Comparison of Temperature Dependent Carrier Transport in FinFET and Gate-All-Around Nanowire FET von Kim, Soohyun, Kim, Jungchun, Jang, Doyoung, Ritzenthaler, Romain, Parvais, Bertrand, Mitard, Jerome, Mertens, Hans, Chiarella, Thomas, Horiguchi, Naoto, Lee, Jae Woo

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SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability Issues von Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P. J., Kauerauf, T., Mitard, J., Witters, L., Grasser, T., Groeseneken, G.

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Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits von Crupi, F., Albano, D., Alioto, M., Franco, J., Selmi, L., Mitard, J., Groeseneken, G.

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Charge Collection Mechanisms of Ge-Channel Bulk p MOSFETs von Samsel, Isaak K., En Xia Zhang, Sternberg, Andrew L., Kai Ni, Reed, Robert A., Fleetwood, Daniel M., Alles, Michael L., Schrimpf, Ronald D., Linten, Dimitri, Mitard, Jerome, Witters, Liesbeth, Collaert, Nadine

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Analog Performance and its Variability in Sub-10 nm Fin-Width FinFETs: a Detailed Analysis von Bhoir, Mandar S., Chiarella, Thomas, Ragnarsson, Lars Ake, Mitard, Jerome, Terzeiva, Valentina, Horiguchi, Naoto, Mohapatra, Nihar R.

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