Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures von Ambacher, O, Majewski, J, Miskys, C, Link, A, Hermann, M, Eickhoff, M, Stutzmann, M, Bernardini, F, Fiorentini, V, Tilak, V, Schaff, B, Eastman, L F

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AlN/diamond heterojunction diodes von Miskys, C. R., Garrido, J. A., Nebel, C. E., Hermann, M., Ambacher, O., Eickhoff, M., Stutzmann, M.

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Spatially resolved photoluminescence of inversion domain boundaries in GaN-based lateral polarity heterostructures von Schuck, P. J., Mason, M. D., Grober, R. D., Ambacher, O., Lima, A. P., Miskys, C., Dimitrov, R., Stutzmann, M.

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High quality heteroepitaxial AlN films on diamond von Vogg, G., Miskys, C. R., Garrido, J. A., Hermann, M., Eickhoff, M., Stutzmann, M.

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GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates von Miskys, C. R., Kelly, M. K., Ambacher, O., Martı́nez-Criado, G., Stutzmann, M.

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Characterization of InGaN thin films using high-resolution x-ray diffraction von Görgens, L., Ambacher, O., Stutzmann, M., Miskys, C., Scholz, F., Off, J.

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Free-standing GaN grown on epitaxial lateral overgrown GaN substrates von Martinez-Criado, G., Kuball, M., Benyoucef, M., Sarua, A., Frayssinet, E., Beaumont, B., Gibart, P., Miskys, C.R., Stutzmann, M.

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Photoluminescence study of excitons in homoepitaxial GaN von Martı́nez-Criado, G., Miskys, C. R., Cros, A., Ambacher, O., Cantarero, A., Stutzmann, M.

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Structural and interface properties of an AlN diamond ultraviolet light emitting diode von Miskys, C. R., Garrido, J. A., Hermann, M., Eickhoff, M., Nebel, C. E., Stutzmann, M., Vogg, G.

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Detonations of Gallium Azides:  A Simple Route to Hexagonal GaN Nanocrystals von Frank, Alissa C, Stowasser, Frank, Sussek, Harald, Pritzkow, Hans, Miskys, Claudio R, Ambacher, Oliver, Giersig, Michael, Fischer, Roland A

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Growth of quaternary AlInGaN/GaN heterostructures by plasma-induced molecular beam epitaxy von Lima, A.P, Miskys, C.R, Karrer, U, Ambacher, O, Wenzel, A, Rauschenbach, B, Stutzmann, M

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Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures von Martı́nez-Criado, G., Cros, A., Cantarero, A., Ambacher, O., Miskys, C. R., Dimitrov, R., Stutzmann, M., Smart, J., Shealy, J. R.

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AlN/Diamond np-junctions von Nebel, Christoph E., Miskys, Claudio R., Garrido, Jose A., Hermann, Martin, Ambacher, Oliver, Eickhoff, Martin, Stutzmann, Martin

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Photoluminescence of Ga-face AlGaN/GaN single heterostructures von Martı́nez-Criado, G, Cros, A, Cantarero, A, Miskys, C.R, Ambacher, O, Dimitrov, R, Stutzmann, M

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Excitonic Transitions in Homoepitaxial GaN von Martínez-Criado, G., Miskys, C.R., Cros, A., Cantarero, A., Ambacher, O., Stutzmann, M.

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Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors von Dimitrov, R, Tilak, V, Yeo, W, Green, B, Kim, H, Smart, J, Chumbes, E, Shealy, J.R, Schaff, W, Eastman, L.F, Miskys, C, Ambacher, O, Stutzmann, M

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Scanning x-ray excited optical luminescence microscopy in GaN von Martínez-Criado, G., Alen, B., Homs, A., Somogyi, A., Miskys, C., Susini, J., Pereira-Lachataignerais, J., Martínez-Pastor, J.

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Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles von de Oliveira, C.E.M., de Carvalho, M.M.G., Mendonça, C.A.C., Miskys, C.R., Guadalupi, G.M., Battagliarin, M., Bueno, M.I.M.S.

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Growth of InP by LEC using glassy carbon crucibles von de Oliveira, C.E.M., de Carvalho, M.M.G., Miskys, C.R.

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Free-standing HVPE-GaN Layers von Larsson, H., Gogova, D., Kasic, A., Yakimova, R., Monemar, B., Miskys, C. R., Stutzmann, M.

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