Reset Switching Probability of Resistive Switching Devices von AN CHEN, LIN, Ming-Ren

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Variability of resistive switching memories and its impact on crossbar array performance von An Chen, Ming-Ren Lin

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Band offset induced threshold variation in strained-Si nMOSFETs von Jung-Suk Goo, Qi Xiang, Takamura, Y., Arasnia, F., Paton, E.N., Besser, P., Pan, J., Ming-Ren Lin

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The effect of annealing temperatures on self-aligned replacement (damascene) TaCN-TaN-stacked gate pMOSFETs von Pan, J., Woo, C., Ngo, M.-V., Xie, J., Matsumoto, D., Murthy, D., Jung-Suk Goo, Qi Xiang, Ming-Ren Lin

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A low-temperature metal-doping technique for engineering the gate electrode of replacement metal gate CMOS transistors von Pan, J., Woo, C., Ngo, M.V., Besser, P., Pellerin, J., Qi Xiang, Ming-Ren Lin

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Thermal effects and instability in unipolar resistive switching devices von An Chen, Ming-Ren Lin

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A comprehensive model for crossbar memory arrays von An Chen, Krivokapic, Z., Ming-Ren Lin

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Self-aligned nickel, cobalt/tantalum nitride stacked-gate pMOSFETs fabricated with a low temperature process after metal electrode deposition von Pan, J., Woo, C., Ngo, M.-V., Chih-Yuh Yang, Besser, P., King, P., Bernard, J., Adem, E., Tracy, B., Pellerin, J., Qi Xiang, Ming-Ren Lin

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Time dependent dielectric wearout (TDDW) technique for reliability of ultrathin gate oxides von Yider Wu, Qi Xiang, Bang, D., Lucovsky, G., Ming-Ren Lin

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Correlation of Id- and Ig-random telegraph noise to positive bias temperature instability in scaled high-κ/metal gate n-type MOSFETs von Chia-Yu Chen, Qiushi Ran, Hyun-Jin Cho, Kerber, Andreas, Yang Liu, Ming-Ren Lin, Dutton, Robert W

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FinFET scaling to 10 nm gate length von Bin Yu, Leland Chang, Ahmed, S., Haihong Wang, Bell, S., Chih-Yuh Yang, Tabery, C., Chau Ho, Qi Xiang, Tsu-Jae King, Bokor, J., Chenming Hu, Ming-Ren Lin, Kyser, D.

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Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides von Wu, Yider, Xiang, Qi, Yang, Jean Y.M., Lucovsky, Gerald, Lin, Ming-Ren

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Nanoscale CMOS at low temperature: design, reliability, and scaling trend von Bin Yu, Haihong Wang, Riccobene, C., Hyeon-Seag Kim, Qi Xiang, Ming-Ren Lin, Leland Chang, Chenming Hu

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Novel DRAM cell with amplified capacitor for embedded application von Hyun-Jin Cho, Ming-Ren Lin

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Comparison of the anti-apoptotic effects of 15- and 35-minute suspended moxibustion after focal cerebral ischemia/reperfusion injury von Xiao, Ai-jiao, He, Lin, Ouyang, Xin, Liu, Jie-min, Chen, Ming-ren

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Metal gate NMOSFETs with TaSiN/TaN stacked electrode fabricated by a replacement (damascene) technique von Pan, J., Ngo, M.-V., Woo, C., Jung-Suk Goo, Besser, P., Bin Yu, Qi Xiang, Ming-Ren Lin

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Extending the life of N/O stack gate dielectric with gate electrode engineering von Qi Xiang, Krivokapic, Z., Maszara, W., Ming-Ren Lin

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Developmental Genetics Analysis for Plant Height in indica Hybrid Rice Across Environments von Peng, Tao, Zhong, Bing-qiang, Ling, Ying-hua, Yang, Zheng-lin, Zha, Ren-ming, Xie, Rong, Liu, Cheng-yuan, He, Guang-hua

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Manufacturability of 20-nm ultrathin body fully depleted SOI devices with FUSI metal gates : Materials-related manufacturing issues in the nanochip era von KRIVOKAPIC, Zoran, MASZARA, Witold P, LIN, Ming-Ren

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Large-field high-resolution two-photon digital scanned light-sheet microscopy von Zong, Weijian, Zhao, Jia, Chen, Xuanyang, Lin, Yuan, Ren, Huixia, Zhang, Yunfeng, Fan, Ming, Zhou, Zhuan, Cheng, Heping, Sun, Yujie, Chen, Liangyi

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