Material characteristics of electrically tunable zirconium oxide thin films von Cho, Byeong-Ok, Chang, Jane P., Min, Jae-Ho, Moon, Sang H., Kim, Yil W., Levin, Igor

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ESTIMATION OF THE BEHAVIORS OF SELENIUM IN THE NEAR FIELD OF REPOSITORY von Kim, Seung-Soo, Min, Jae-Ho, Baik, Min-Hoon, Kim, Gye-Nam, Choi, Jong-Won

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Oblique-Directional Plasma Etching of Si Using a Faraday Cage von Lee, Jin-Kwan, Lee, Seung-Haeng, Min, Jae-Ho, Jang, Il-Yong, Kim, Chang-Koo, Moon, Sang Heup

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Comparison of atomic scale etching of poly-Si in inductively coupled Ar and He plasmas von Yun, Hyung Jin, Kim, Tae Ho, Shin, Chee Burm, Kim, Chang-Koo, Min, Jae-Ho, Moon, Sang Heup

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Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. I. Effect of particle emission from the bottom surface in a CF4 plasma von Min, Jae-Ho, Hwang, Sung-Wook, Lee, Gyeo-Re, Moon, Sang Heup

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Angular dependence of etch rates in the etching of poly-Si and fluorocarbon polymer using SF6, C4F8, and O2 plasmas von Min, Jae-Ho, Lee, Gyeo-Re, Lee, Jin-Kwan, Moon, Sang Heup, Kim, Chang-Koo

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Angular dependence of SiO2 etch rate at various bias voltages in a high density CHF3 plasma von Lee, Gyeo-Re, Hwang, Sung-Wook, Min, Jae-Ho, Moon, Sang Heup

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Angular dependence of Si3N4 etch rates and the etch selectivity of SiO2 to Si3N4 at different bias voltages in a high-density C4F8 plasma von Lee, Jin-Kwan, Lee, Gyeo-Re, Min, Jae-Ho, Moon, Sang Heup

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Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma von Hwang, Sung-Wook, Lee, Gyeo-Re, Min, Jae-Ho, Moon, Sang Heup, Kim, Yu Chang, Ryu, Hyun-Kyu, Cho, Yun Seok, Kim, Jin Woong

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Effect of ion energy and incident angle on the modification of a porous low dielectric-constant material in an O2 plasma ashing process von Hwang, Sung-Wook, Lee, Gyeo-Re, Min, Jae-Ho, Moon, Sang Heup

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Contribution of bottom-emitted radicals to the deposition of a film on the SiO2 sidewall during CHF3 plasma etching von Lee, Gyeo-Re, Min, Jae-Ho, Lee, Jin-Kwan, Kang, Se-Koo, Moon, Sang Heup

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Improvement of SiO2 pattern profiles etched in CF4 and SF6 plasmas by using a Faraday cage and neutral beams von Min, Jae-Ho, Lee, Gyeo-Re, Lee, Jin-Kwan, Kim, Chang-Koo, Moon, Sang Heup

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Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. IV. Effects of substrate temperature in a CF4 plasma von Min, Jae-Ho, Hwang, Sung-Wook, Lee, Gyeo-Re, Moon, Sang Heup

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Endoscopic submucosal dissection of a large colonic lipoma:Report of two cases von Lee, Jae Min, Kim, Jeong Ho, Kim, Myungsung, Kim, Jun Hyoung, Lee, Young Bae, Lee, Jae Hyuk, Lim, Che Wan

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Thickness of a modified surface layer formed in a silsesquioxane-based low-k material during etching in a fluorocarbon plasma von Hwang, Sung-Wook, Lee, Gyeo-Re, Min, Jae-Ho, Moon, Sang Heup

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Evaluation of characteristics on titanium surface treatment for absorption of functional groups von Jin, Guang-Chun, Park, Rl-Song, Park, Hyeoung-Ho, Seo, Jae-Min, Lee, Sook-Jeong, Lee, Min-Ho

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Redeposition of etch products on sidewalls during SiO2 etching in a fluorocarbon plasma. II. Effects of source power and bias voltage in a CF4 plasma von Min, Jae-Ho, Hwang, Sung-Wook, Lee, Gyeo-Re, Moon, Sang Heup

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Negative oncologic impact of poor postoperative pain control in left-sided pancreatic cancer von Min, Eun-Ki, Chong, Jae Uk, Hwang, Ho Kyoung, Pae, Sang Joon, Kang, Chang Moo, Lee, Woo Jung

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Safety and efficacy of transradial coronary angiography and intervention in patients older than 80 years： from the Korean Transradial Intervention Prospective Registry von Won, Hoyoun, Lee, Wang Soo, Kim, Sang-Wook, Cho, Byung Ryul, Youn, Young Jin, Lim, Young-Hyo, Lee, Min-Ho, Lee, Jae-Hwan, Rha, Seung-Woon

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POLYIMIDE FILM FOR GRAPHITE SHEET, MANUFACTURING METHOD THEREFOR, AND GRAPHITE SHEET MANUFACTURED THEREFROM von MIN, Jae-Ho, WON, Dong-Young

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