GaAs interfacial self-cleaning by atomic layer deposition von Hinkle, C. L., Sonnet, A. M., Vogel, E. M., McDonnell, S., Hughes, G. J., Milojevic, M., Lee, B., Aguirre-Tostado, F. S., Choi, K. J., Kim, H. C., Kim, J., Wallace, R. M.

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A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial la... von O’Connor, É., Brennan, B., Djara, V., Cherkaoui, K., Monaghan, S., Newcomb, S. B., Contreras, R., Milojevic, M., Hughes, G., Pemble, M. E., Wallace, R. M., Hurley, P. K.

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Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces von Milojevic, M., Aguirre-Tostado, F. S., Hinkle, C. L., Kim, H. C., Vogel, E. M., Kim, J., Wallace, R. M.

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An in situ examination of atomic layer deposited alumina/InAs(100) interfaces von Kirk, A. P., Milojevic, M., Kim, J., Wallace, R. M.

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Serum cytokine profile of laryngeal squamous cell carcinoma patients von Sotirović, J, Perić, A, Vojvodić, D, Baletić, N, Zaletel, I, Stanojević, I, Erdoglija, M, Milojević, M

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The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding von Hinkle, C. L., Milojevic, M., Vogel, E. M., Wallace, R. M.

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Characterization of the “clean-up” of the oxidized Ge(100) surface by atomic layer deposition von Milojevic, M., Contreras-Guerrero, R., Lopez-Lopez, M., Kim, J., Wallace, R. M.

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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation von Hinkle, C. L., Sonnet, A. M., Vogel, E. M., McDonnell, S., Hughes, G. J., Milojevic, M., Lee, B., Aguirre-Tostado, F. S., Choi, K. J., Kim, J., Wallace, R. M.

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Indium stability on InGaAs during atomic H surface cleaning von Aguirre-Tostado, F. S., Milojevic, M., Hinkle, C. L., Vogel, E. M., Wallace, R. M., McDonnell, S., Hughes, G. J.

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The accessibility of sites active in the dissociative adsorption of aromatic hydrocarbons in FeZSM-5 zeolite von Milojević-Rakić, M., Dondur, V., Damjanović-Vasilić, Lj, Rac, V., Rakić, V.

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Surface passivation and implications on high mobility channel performance (Invited Paper) von Hinkle, C.L., Milojevic, M., Vogel, E.M., Wallace, R.M.

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Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics von Hinkle, C. L., Sonnet, A. M., Milojevic, M., Aguirre-Tostado, F. S., Kim, H. C., Kim, J., Wallace, R. M., Vogel, E. M.

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Oxidation of aniline in dopant-free template-free dilute reaction media von Rakić, A., Bajuk-Bogdanović, D., Mojović, M., Ćirić-Marjanović, G., Milojević-Rakić, M., Mentus, S., Marjanović, B., Trchová, M., Stejskal, J.

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An interim channel model for beyond-3G systems: extending the 3GPP spatial channel model (SCM) von Baum, D.S., Hansen, J., Salo, J., Del Galdo, G., Milojevic, M., Kyosti, P.

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Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2∕Al2O3 nanolaminate gate dielectric von Yang, T., Xuan, Y., Zemlyanov, D., Shen, T., Wu, Y. Q., Woodall, J. M., Ye, P. D., Aguirre-Tostado, F. S., Milojevic, M., McDonnell, S., Wallace, R. M.

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Unilateral blindness following nasal septoplasty von Milojevic, M, Sotirovic, J, Stosic, S, Avramovic, S

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Complementary: Green catalysis over red soil for pollutant removal von Milojević-Rakić, M., Gavrilov, N., Janošević Ležaić, A., Uskoković-Marković, S., Nedić Vasiljević, B., Bajuk-Bogdanović, D.

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In-situ characterization of Ga2O passivation of In0.53Ga0.47As prior to high-k dielectric atomic layer deposition von Milojevic, M., Contreras-Guerrero, R., O’Connor, E., Brennan, B., Hurley, P. K., Kim, J., Hinkle, C. L., Wallace, R. M.

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Automated hydrologic analysis of ungauged basins in Serbia using open source software von Zlatanovic, N, Stefanovic, M, Milojevic, M, Cotric, J

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Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning von Hinkle, C. L., Milojevic, M., Brennan, B., Sonnet, A. M., Aguirre-Tostado, F. S., Hughes, G. J., Vogel, E. M., Wallace, R. M.

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