Properties of Si donors and persistent photoconductivity in AlGaN von Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Mil'vidskii, M.G., Redwing, J.M., Shin, M., Skowronski, M., Greve, D.W., Wilson, R.G.

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Experimental and theoretical investigation of formation of the oxygen-containing precipitate-dislocation loop system in silicon von Goldstein, R. V., Mezhennyi, M. V., Mil’vidskii, M. G., Reznik, V. Ya, Ustinov, K. B., Shushpannikov, P. S.

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Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication von Rzaev, M.M., Vdovin, V.I., Schäffler, Friedrich, Mil'vidskii, M.G.

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Deep centers in AlGaN-based light emitting diode structures von Polyakov, A.Y, Smirnov, N.B, Govorkov, A.V, Mil'vidskii, M.G, Usikov, A.S, Pushnyi, B.V, Lundin, W.V

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Anomalous effects of dopant distribution in Ge single crystals grown by FZ-technique aboard spacecrafts von Kartavykh, A.V., Kopeliovich, E.S., Mil'vidskii, M.G., Rakov, V.V.

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Morphological Transformation of Oxide Particles and Thresholds for Effective Gettering in Silicon von Falster, Robert J., Voronkov, Vladimir V., Mil'vidskii, M.G., Resnick, V.Y.

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Creation of defects during the growth of semiconductor single crystals and films von Mil'vidskii, M.G., Bochkarev, E.P.

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Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy von Polyakov, A.Y, Govorkov, A.V, Smirnov, N.B, Mil'vidskii, M.G, Redwing, J.M, Shin, M, Skowronski, M, Greve, D.W

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Thermally induced strain relaxation in SiGe/Si heterostructures with low-temperature buffer layers von Vdovin, V. I., Yugova, T. G., Rzaev, M. M., Schäffler, F., Mil'vidskii, M.G.

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Thermal Optimization of Cz Silicon Single Crystal Growth von Prostomolotov, A.I., Verezub, N.A., Milvidskii, M.G.

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Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy von Polyakov, A.Y, Govorkov, A.V, Smirnov, N.B, Mil'vidskii, M.G, Tsvetkov, D.V, Stepanov, S.I, Nikolaev, A.E, Dmitriev, V.A

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Mechanisms of Dislocation Generation in Heterostructures Based on SiGe Alloys von Vdovin, V.I., Mil'vidskii, M.G., Yugova, T.G.

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Effect of alloy composition on defect formation in Ge xSi 1− x/Si heterostructures obtained by molecular beam epitaxy von Vdovin, V.I., Mil'vidskii, M.G., Yugova, T.G., Lyutovich, K.L., Saidov, S.M.

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Effect of alloy composition on defect formation in GexSi1-x/Si heterostructures obtained by molecular beam epitaxy von VDOVIN, V. I, MIL'VIDSKII, M. G, YUGOVA, T. G, LYUTOVICH, K. L, SAIDOV, S. M

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Growth and properties of thin InGaAs epitaxial layers on InP von Belogorokhov, A.I., Mil'vidskii, M.G., Osipova, A.N.

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Antiphase boundaries in GaAs layers on Si and Ge von Vdovin, V.I., Mil'vidskii, M.G., Yugova, T.G.

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The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals von Artemyev, V.K., Folomeev, V.I., Ginkin, V.P., Kartavykh, A.V., Mil’vidskii, M.G., Rakov, V.V.

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Deep levels studies of AlGaN/GaN superlattices von Polyakov, A.Y., Smirnov, N.B., Govorkov, A.V., Mil’vidskii, M.G., Pearton, S.J., Usikov, A.S., Shmidt, N.M., Osinsky, A.V., Lundin, W.V., Zavarin, E.E., Besulkin, A.I.

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Effect of native point defects on morphology of gettering centres in CZ-silicon wafers von Enisherlova, K.L., Rusak, T.F., Mil'vidskii, M.G., Reznick, V.J.

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Si Wafer Bonding: Structural Features of the Interface von Seacrist, M., Vdovin, V.I., Ries, M., Pippel, Eckhard, Milvidskii, M.G., Falster, Robert J., Zakharov, N.D., Werner, P.

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