Effect of long-term storage on the electronic structure of semiconducting silicon wafers implanted by rhenium ions von Zatsepin, D. A., Boukhvalov, D. W., Zatsepin, A. F., Mikhaylov, A. N., Gerasimenko, N. N., Zaporozhan, O. A.

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Field- and irradiation-induced phenomena in memristive nanomaterials von Mikhaylov, A. N., Gryaznov, E. G., Belov, A. I., Korolev, D. S., Sharapov, A. N., Guseinov, D. V., Tetelbaum, D. I., Tikhov, S. V., Malekhonova, N. V., Bobrov, A. I., Pavlov, D. A., Gerasimova, S. A., Kazantsev, V. B., Agudov, N. V., Dubkov, A. A., Rosário, C. M. M., Sobolev, N. A., Spagnolo, B.

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Series Connection of Memristor with Other Discrete Elements: Resistor, Semiconductor Diode, Inductor and Capacitor von Kitaev, A. E., Belov, A. I., Guseinov, D. V., Mikhaylov, A. N.

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Experimental Observation of s-Component of Superconducting Pairing in Thin Disordered HTSC Films Based on YBCO von Antonov, A. V., El’kina, A. I., Vasiliev, V. K., Galin, M. A., Masterov, D. V., Mikhaylov, A. N., Morozov, S. V., Pavlov, S. A., Parafin, A. E., Tetelbaum, D. I., Ustavschikov, S. S., Yunin, P. A., Savinov, D. A.

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Nonstationary distributions and relaxation times in a stochastic model of memristor von Agudov, N V, Safonov, A V, Krichigin, A V, Kharcheva, A A, Dubkov, A A, Valenti, D, Guseinov, D V, Belov, A I, Mikhaylov, A N, Carollo, A, Spagnolo, B

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Noise-induced resistive switching in a memristor based on ZrO2(Y)/Ta2O5 stack von Filatov, D O, Vrzheshch, D V, Tabakov, O V, Novikov, A S, Belov, A I, Antonov, I N, Sharkov, V V, Koryazhkina, M N, Mikhaylov, A N, Gorshkov, O N, Dubkov, A A, Carollo, A, Spagnolo, B

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Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals von Shmagin, V B, Yablonskiy, A N, Stepikhova, M V, Yurasov, D V, Mikhaylov, A N, Tetelbaum, D I, Rodyakina, E E, Morozova, E E, Shengurov, D V, Kraev, S A, Yunin, P A, Belov, A I, Novikov, A V

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Silicon-based light-emitting transistor with Ge(Si) nanoislands embedded in a photonic crystal: Control of the spectrum and spatial distribution of the emission von Yablonskiy, A. N., Shmagin, V. B., Zakharov, V. E., Yurasov, D. V., Shaleev, M. V., Demidov, E. V., Mikhaylov, A. N., Tetelbaum, D. I., Rodyakina, E. E., Morozova, E. E., Shengurov, D. V., Kraev, S. A., Novikov, A. V.

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Inverted spike-rate-dependent plasticity due to charge traps in a metal-oxide memristive device von Mishchenko, M A, Bolshakov, D I, Lukoyanov, V I, Korolev, D S, Belov, A I, Guseinov, D V, Matrosov, V V, Kazantsev, V B, Mikhaylov, A N

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Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: The k ⋅ p-calculations von Konakov, A. A., Filatov, D. O., Korolev, D. S., Belov, A. I., Mikhaylov, A. N., Tetelbaum, D. I., Kumar, Mahesh

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Accounting for Heat Release in Small Volumes of Matter on the Example of the Growth of ZnO Microrods: Search for a Modeling Technique von Matyushkin, I. V., Telminov, O. A., Mikhaylov, A. N.

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Yttria-stabilized zirconia cross-point memristive devices for neuromorphic applications von Emelyanov, A.V., Nikiruy, K.E., Demin, V.A., Rylkov, V.V., Belov, A.I., Korolev, D.S., Gryaznov, E.G., Pavlov, D.A., Gorshkov, O.N., Mikhaylov, A.N., Dimitrakis, P.

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Light-emitting 9R-Si phase formed by Kr+ ion implantation into SiO2/Si substrate von Nikolskaya, A. A., Korolev, D. S., Mikhaylov, A. N., Belov, A. I., Sushkov, A. A., Krivulin, N. O., Muhamatchin, K. R., Elizarova, A. A., Marychev, M. O., Konakov, A. A., Tetelbaum, D. I., Pavlov, D. A.

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Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ–X mixing of the confined electron states von Belyakov, V A, Belov, A I, Mikhaylov, A N, Tetelbaum, D I, Burdov, V A

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Localization of dislocation-related luminescence centers in self-ion implanted silicon and effect of additional boron ion doping von Tetelbaum, D. I., Mikhaylov, A. N., Belov, A. I., Korolev, D. S., Shushunov, A. N., Bobrov, A. I., Pavlov, D. A., Shek, E. I., Sobolev, N. A.

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AI Acceleration Enabled by Nanoelectronic Memristive Devices von Bordanov, I A, Zuev, A D, Danilin, S N, Khranilov, V P, Bukvarev, E A, Kim, S, Gryaznov, E G, Mikhaylov, A N, Shchanikov, S A

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Simulation of initial stage of silicon cluster formation during post-annealing of memristive structures based on silicon oxide films subjected to Si+ implantation von Okulich, E.V., Okulich, V.I., Tetelbaum, D.I., Mikhaylov, A.N.

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Role of highly doped Si substrate in bipolar resistive switching of silicon nitride MIS-capacitors von Tikhov, S.V., Mikhaylov, A.N., Belov, A.I., Korolev, D.S., Antonov, I.N., Karzanov, V.V., Gorshkov, O.N., Tetelbaum, D.I., Karakolis, P., Dimitrakis, P.

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Effect of ion irradiation on resistive switching in metal-oxide memristive nanostructures von Mikhaylov, A N, Belov, A I, Korolev, D S, Gerasimova, S A, Antonov, I N, Okulich, E V, Shuiskiy, R A, Tetelbaum, D I

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Towards an efficient light-emitting source based on self-implanted silicon with dislocation-related luminescence von Korolev, D S, Nikolskaya, A A, Tereshchenko, A N, Mikhaylov, A N, Belov, A I, Tetelbaum, D I

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