The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs von Grabowski, Mikolaj, Grzanka, Ewa, Grzanka, Szymon, Lachowski, Artur, Smalc-Koziorowska, Julita, Czernecki, Robert, Hrytsak, Roman, Moneta, Joanna, Gawlik, Grzegorz, Turos, Andrzej, Leszczyński, Mike

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Application of a composite plasmonic substrate for the suppression of an electromagnetic mode leakage in InGaN laser diodes von Perlin, Piotr, Holc, Katarzyna, Sarzyński, Marcin, Scheibenzuber, Wolfgang, Marona, Łucja, Czernecki, Robert, Leszczyński, Mike, Bockowski, Michał, Grzegory, Izabella, Porowski, Sylwester, Cywiński, Grzegorz, Firek, Piotr, Szmidt, Jan, Schwarz, Ulrich, Suski, Tadek

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Elimination of trench defects and V-pits from InGaN/GaN structures von Smalc-Koziorowska, Julita, Grzanka, Ewa, Czernecki, Robert, Schiavon, Dario, Leszczyński, Mike

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In Situ X-Ray Study During Thermal Cycle Treatment Combined with Complementary Ex Situ Investigation of InGaN Quantum Wells von Grzanka, Ewa, Bauer, Sondes, Lachowski, Artur, Grzanka, Szymon, Czernecki, Robert, So, Byeongchan, Baumbach, Tilo, Leszczyński, Mike

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Effect of doping of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability von Lachowski, Artur, Grzanka, Ewa, Czernecki, Robert, Grabowski, Mikołaj, Grzanka, Szymon, Leszczyński, Mike, Smalc-Koziorowska, Julita

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Improving thermal stability of InGaN quantum wells by doping of GaN barrier layers von Lachowski, Artur, Grzanka, Ewa, Grzanka, Szymon, Czernecki, Robert, Grabowski, Mikołaj, Hrytsak, Roman, Nowak, Grzegorz, Leszczyński, Mike, Smalc-Koziorowska, Julita

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Nitride-based quantum structures and devices on modified GaN substrates von Perlin, Piotr, Franssen, Gijs, Szeszko, Justyna, Czernecki, R., Targowski, Grzegorz, Kryśko, Marcin, Grzanka, Szymon, Nowak, Grzegorz, Litwin-Staszewska, Elżbieta, Piotrzkowski, Ryszard, Leszczyński, Mike, Łucznik, Bolek, Grzegory, Izabella, Jakieła, Rafał, Albrecht, Martin, Suski, Tadek

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Continuous-wave operation of (Al,In)GaN distributed-feedback laser diodes with high-order notched gratings von Slight, Thomas J., Stanczyk, Szymon, Watson, Scott, Yadav, Amit, Grzanka, Szymon, Rafailov, Edik, Perlin, Piotr, Najda, Stephen P., Leszczy ski, Mike, Gwyn, Steffan, Kelly, Anthony E.

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Indium concentration fluctuations in InGaN/GaN quantum wells von Michaowski, Pawe Piotr, Grzanka, Ewa, Grzanka, Szymon, Lachowski, Artur, Staszczak, Grzegorz, Plesiewicz, Jerzy, Leszczyski, Mike, Turos, Andrzej

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Special Issue “Advances in Epitaxial Materials”-Editorial Preface von Leszczynski, Mike

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Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes von Sarzyński, Marcin, Grzanka, Ewa, Grzanka, Szymon, Targowski, Grzegorz, Czernecki, Robert, Reszka, Anna, Holy, Vaclav, Nitta, Shugo, Liu, Zhibin, Amano, Hiroshi, Leszczyński, Mike

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GaN Laser Diode Technology for Visible-Light Communications von Najda, Stephen P., Perlin, Piotr, Suski, Tadek, Marona, Lucja, Leszczyński, Mike, Wisniewski, Przemek, Stanczyk, Szymon, Schiavon, Dario, Slight, Thomas, Watson, Malcolm A., Gwyn, Steffan, Kelly, Anthony E., Watson, Scott

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Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors von Giannazzo, Filippo, Fisichella, Gabriele, Greco, Giuseppe, Schilirò, Emanuela, Deretzis, Ioannis, Lo Nigro, Raffaella, La Magna, Antonino, Roccaforte, Fabrizio, Iucolano, Ferdinando, Lo Verso, Stella, Ravesi, Sebastiano, Prystawko, Pawel, Kruszewski, Piotr, Leszczyński, Mike, Dagher, Roy, Frayssinet, Eric, Michon, Adrien, Cordier, Yvon

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Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition von Schilirò, Emanuela, Giannazzo, Filippo, Bongiorno, Corrado, Di Franco, Salvatore, Greco, Giuseppe, Roccaforte, Fabrizio, Prystawko, Pawel, Kruszewski, Piotr, Leszczyński, Mike, Krysko, Marcin, Michon, Adrien, Cordier, Yvon, Cora, Ildiko, Pecz, Bela, Gargouri, Hassan, Nigro, Raffaella Lo

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Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers von Czernecki, Robert, Kret, Slawomir, Kempisty, Pawel, Grzanka, Ewa, Plesiewicz, Jerzy, Targowski, Greg, Grzanka, Szymon, Bilska, Marta, Smalc-Koziorowska, Julita, Krukowski, Stanislaw, Suski, Tadek, Perlin, Piotr, Leszczynski, Mike

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Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells von Czernecki, Robert, Grzanka, Ewa, Smalc-Koziorowska, Julita, Grzanka, Szymon, Schiavon, Dario, Targowski, Grzegorz, Plesiewicz, Jerzy, Prystawko, Pawel, Suski, Tadeusz, Perlin, Piotr, Leszczynski, Mike

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Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition von Schilirò, Emanuela, Giannazzo, Filippo, Di Franco, Salvatore, Greco, Giuseppe, Fiorenza, Patrick, Roccaforte, Fabrizio, Prystawko, Paweł, Kruszewski, Piotr, Leszczynski, Mike, Cora, Ildiko, Pécz, Béla, Fogarassy, Zsolt, Lo Nigro, Raffaella

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Application of a composite plasmonic substrate for the suppressionof an electromagnetic mode leakage in InGaN laser diodes von Perlin, Piotr, Holc, Katarzyna, Sarzyński, Marcin, Scheibenzuber, Wolfgang, Marona, Łucja, Czernecki, Robert, Leszczyński, Mike, Bockowski, Michał, Grzegory, Izabella, Porowski, Sylwester, Cywiński, Grzegorz, Firek, Piotr, Szmidt, Jan, Schwarz, Ulrich, Suski, Tadek

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Visible light communications using a directly modulated 422 nm GaN laser diode von Watson, Scott, Tan, Mingming, Najda, Stephen P, Perlin, Piotr, Leszczynski, Mike, Targowski, Grzegorz, Grzanka, Szymon, Kelly, A E

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Hydrogen diffusion in GaN:Mg and GaN:Si von Czernecki, Robert, Grzanka, Ewa, Jakiela, Rafal, Grzanka, Szymon, Skierbiszewski, Czeslaw, Turski, Henryk, Perlin, Piotr, Suski, Tadek, Donimirski, Konstanty, Leszczynski, Mike

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