Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design von Gubicza, Agnes, Manrique, Dávid Zs, Pósa, László, Lambert, Colin J., Mihály, György, Csontos, Miklós, Halbritter, András

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From stochastic single atomic switch to nanoscale resistive memory device von Geresdi, Attila, Halbritter, András, Gyenis, András, Makk, Péter, Mihály, György

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Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices von Gubicza, Agnes, Csontos, Miklós, Halbritter, András, Mihály, György

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Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition von Gubicza, Agnes, Csontos, Miklós, Halbritter, András, Mihály, György

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A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices von Geresdi, Attila, Csontos, Miklós, Gubicza, Agnes, Halbritter, András, Mihály, György

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Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions von Sánta, Botond, Balogh, Zoltán, Gubicza, Agnes, Pósa, László, Krisztián, Dávid, Mihály, György, Csontos, Miklós, Halbritter, András

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Non-exponential resistive switching in Ag 2 S memristors: a key to nanometer-scale non-volatile memory devices von Gubicza, Agnes, Csontos, Miklós, Halbritter, András, Mihály, György

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Resistive switching in metallic Ag 2 S memristors due to a local overheating induced phase transition von Gubicza, Agnes, Csontos, Miklós, Halbritter, András, Mihály, György

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A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devicesElectronic supplementary information (ESI) available: Sample prepara... von Geresdi, Attila, Csontos, Miklós, Gubicza, Agnes, Halbritter, András, Mihály, György

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Interaction of hydrogen with metallic nanojunctions von Halbritter, András, Csonka, Szabolcs, Makk, Péter, Mihály, György

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A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag 2 S devices von Geresdi, Attila, Csontos, Miklós, Gubicza, Agnes, Halbritter, András, Mihály, György

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From stochastic single atomic switch to nanoscale resistive memory deviceElectronic supplementary information (ESI) available: Sample characterization, experimental techniques and... von Geresdi, Attila, Halbritter, András, Gyenis, András, Makk, Péter, Mihály, György

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Energy Gap in Superconducting Fullerides: Optical and Tunneling Studies von Koller, D, Martin, MC, Mihály, L, Mihály, G, Oszlányi, G, Baumgartner, G, Forró, L

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The first passive house in Hungary

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Resistive switching in metallic Ag sub(2)S memristors due to a local overheating induced phase transition von Gubicza, Agnes, Csontos, Miklos, Halbritter, Andras, Mihaly, Gyorgy

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Non-exponential resistive switching in Ag sub(2)S memristors: a key to nanometer-scale non-volatile memory devices von Gubicza, Agnes, Csontos, Miklos, Halbritter, Andras, Mihaly, Gyorgy

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A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag sub(2)S devices von Geresdi, Attila, Csontos, Miklos, Gubicza, Agnes, Halbritter, Andras, Mihaly, Gyorgy

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Kant's two hundred year old dream. (Chances of eternal peace in the postmodern era) von Vajda, György Mihály

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Naissance de la modernité en Hongrie von VAJDA, György Mihály

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Highly conducting organic alloys (NBDT) 2 I x Br 3–x {NBDT = naphthaceno[5,6-cd: 11,12-c′d′]bis[1,2]dithiole} von Kamarás, Katalin, Mihály, György, Grüner, György, Jánossy, András

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