Bandwidth-unlimited polarization-maintaining metasurfaces von Song, Q, Khadir, S, Vézian, S, Damilano, B, Mierry, P D, Chenot, S, Brandli, V, Genevet, P

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The microstructure, local indium composition and photoluminescence in green‐emitting InGaN/GaN quantum wells von CHERY, N., NGO, T.H., CHAUVAT, M.P., DAMILANO, B., COURVILLE, A., DE MIERRY, P., GRIEB, T., MEHRTENS, T., KRAUSE, F.F., MÜLLER‐CASPARY, K., SCHOWALTER, M., GIL, B., ROSENAUER, A., RUTERANA, P.

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Whispering-gallery mode InGaN microdisks on GaN substrates von Zi, H., Fu, W. Y., Tabataba-Vakili, F., Kim-Chauveau, H., Frayssinet, E., De Mierry, P., Damilano, B., Duboz, J- Y., Boucaud, Ph, Semond, F., Choi, H. W.

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Bandwidth Unlimited Polarization-Maintaining Metasurfaces von Song, Q., Khadir, S., Vézian, S., Damilano, B., Mierry, P. D, Chenot, S., Brandli, V., Genevet, Patrice

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Stacking faults blocking process in (1 1 −2 2) semipolar GaN growth on sapphire using asymmetric lateral epitaxy von Kriouche, N., Vennéguès, P., Nemoz, M., Nataf, G., De Mierry, P.

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Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography von Bengoechea-Encabo, A., Albert, S., Sanchez-Garcia, M.A., López, L.L., Estradé, S., Rebled, J.M., Peiró, F., Nataf, G., de Mierry, P., Zuniga-Perez, J., Calleja, E.

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The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates von KIM-CHAUVEAU, H, DE MIERRY, P, CHAUVEAU, J.-M, DUBOZ, J.-Y

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Growth and characterization of polar (0001) and semipolar (11−22) InGaN/GaN quantum dots von Das, A., Sinha, P., Kotsar, Y., Kandaswamy, P.K., Dimitrakopulos, G.P., Kehagias, Th, Komninou, Ph, Nataf, G., De Mierry, P., Monroy, E.

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Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes von KIM-CHAUVEAU, H, FRAYSSINET, E, CHARASH, R, VAJPEYI, A, LAMY, J.-M, AKHTER, M, MAASKANT, P. P, CORBETT, B, HANGLEITER, A, WIECK, A, DAMILANO, B, DE MIERRY, P, BODIOU, L, NGUYEN, L, VENNEGUES, P, CHAUVEAU, J.-M, CORDIER, Y, DUBOZ, J. Y

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Defects induced in p-type silicon by photocathodic charging of hydrogen von DE MIERRY, P, ETCHEBERRY, A, RIZK, R, ETCHEGOIN, P, AUCOUTURIER, M

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Effect of surface preparations on electrical and chemical surface properties of P-type silicon von DE MIERRY, P, BALLUTAUD, D, AUCOUTURIER, M, ETCHEBERRY, A

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Light-induced defects in plasma-hydrogenated InP:Zn von DE MIERRY, P, MADELON, R, CRUEGE, F, RIZK, R

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Photocathodic hydrogenation of p-type silicon von DE MIERRY, P, ETCHEBERRY, A, AUCOUTURIER, M

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Reactivity of II-V and II-VI semiconductors toward hydrogen : surface modification and evolution in air von BALLUTAUD, D, DEBIEMME-CHOUVY, C, ETCHEBERRY, A, DE MIERRY, P, SVOB, L

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A new method for the study of chemical diffusion in oxides with application to cerium oxide CeO2− x von Millot, F., Mierry, P.De

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Spectroscopic investigation of hydrogen-dopant complexes in bulk p-type and implanted n-type crystalline silicon von RIZK, R, DE MIERRY, P, SONG, C, BALLUTAUD, D, PAJOT, B

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Influence of thermal treatments on the distribution of contaminating copper near the surface of silicon: a comparative SIMS and XPS study von Ballutaud, D., de Mierry, P., Aucouturier, M., Darque-Ceretti, E.

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Yellow Luminescence and Hydrocarbon Contamination in MOVPE-Grown GaN von De Mierry, P., Ambacher, O., Kratzer, H., Stutzmann, M.

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On the modeling of hydrogen diffusion processes and complex formation in p-type crystalline silicon von Rizk, R., de Mierry, P., Ballutaud, D., Aucouturier, M., Mathiot, D.

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Electrolytic hydrogenation of p-type silicon bulk and surface modifications von de Mierry, P., Etcheberry, A., Aucouturier, M.

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