High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure von Zhou, Yuwei, Mi, Minhan, Yang, Mei, Han, Yutong, Wang, Pengfei, Chen, Yilin, Liu, Jielong, Gong, Can, Lu, Yiwei, Zhang, Meng, Zhu, Qing, Ma, Xiaohua, Hao, Yue

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Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact von Yang, Ling, Lu, Hao, Niu, Xuerui, Zhang, Meng, Shi, Chunzhou, Deng, Longge, Hou, Bin, Mi, Minhan, Wu, Mei, Cheng, Kai, Zhu, Qing, Lu, Yang, Lv, Ling, Ma, Xiaohua, Hao, Yue

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Millimeter-Wave Power AlGaN/GaN HEMT Using Surface Plasma Treatment of Access Region von Mi, Minhan, Ma, Xiao-Hua, Yang, Ling, Lu, Yang, Hou, Bin, Zhu, Jiejie, Zhang, Meng, Zhang, Heng-Shuang, Zhu, Qing, Yang, Lin-An, Hao, Yue

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Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light von Chen, Yilin, Zhu, Qing, Zhu, Jiejie, Mi, Minhan, Zhang, Meng, Zhou, Yuwei, Zhao, Ziyue, Ma, Xiaohua, Hao, Yue

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Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs von Zhang, Meng, Ma, Xiao-Hua, Yang, Ling, Mi, Minhan, Hou, Bin, He, Yunlong, Wu, Sheng, Lu, Yang, Zhang, Heng-Shuang, Zhu, Qing, Yin, Jun, Wu, Jiafeng, Yang, Lin-An, Hao, Yue

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Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications von Zhou, Yuwei, Mi, Minhan, Wang, Pengfei, Gong, Can, Chen, Yilin, Chen, Zhihong, Liu, Jielong, Yang, Mei, Zhang, Meng, Zhu, Qing, Ma, Xiaohua, Hao, Yue

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Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP von He, Yunlong, Mi, Minhan, Wang, Chong, Zheng, Xuefeng, Zhang, Meng, Zhang, Hengshuang, Wu, Ji, Yang, Ling, Zhang, Peng, Ma, Xiaohua, Hao, Yue

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Improving the transconductance flatness of InAlN/GaN HEMT by modulating VT along the gate width von Mi, Minhan, Wu, Sheng, Zhang, Meng, Yang, Ling, Bin Hou, Zhao, Ziyue, Guo, Lixin, Zheng, Xuefeng, Ma, Xiaohua, Hao, Yue

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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications von Chen, Zhihong, Mi, Minhan, Liu, Jielong, Wang, Pengfei, Zhou, Yuwei, Zhang, Meng, Ma, Xiaohua, Hao, Yue

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A review on GaN HEMTs: nonlinear mechanisms and improvement methods von Du, Chenglin, Ye, Ran, Cai, Xiaolong, Duan, Xiangyang, Liu, Haijun, Zhang, Yu, Qiu, Gang, Mi, Minhan

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Enhanced gm and fT With High Johnson's Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge von Ling Yang, Minhan Mi, Bin Hou, Hengshuang Zhang, Jiejie Zhu, Qing Zhu, Yang Lu, Meng Zhang, Yunlong He, Lixiang Chen, Xiaowei Zhou, Ling Lv, Xiaohua Ma, Yue Hao

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Improvement of Subthreshold Characteristic of Gate-Recessed AlGaN/GaN Transistors by Using Dual-Gate Structure von Yang, Ling, Mi, Minhan, Hou, Bin, Zhu, Jiejie, Zhang, Meng, He, Yunlong, Lu, Yang, Zhu, Qing, Zhou, Xiaowei, Lv, Ling, Cao, Yanrong, Ma, Xiaohua, Hao, Yue

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Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications von Zhou, Yuwei, Zhu, Jiejie, Mi, Minhan, Zhang, Meng, Wang, Pengfei, Han, Yutong, Wu, Sheng, Liu, Jielong, Zhu, Qing, Chen, Yilin, Hou, Bin, Ma, Xiaohua, Hao, Yue

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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process von Guo, Jingshu, Zhu, Jiejie, Liu, Siyu, Liu, Jielong, Xu, Jiahao, Chen, Weiwei, Zhou, Yuwei, Zhao, Xu, Mi, Minhan, Yang, Mei, Ma, Xiaohua, Hao, Yue

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Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses von He, Yunlong, Li, Peixian, Wang, Chong, Li, Xiangdong, Zhao, Shenglei, Mi, Minhan, Pei, Jiuqing, Zhang, Jincheng, Ma, Xiaohua, Hao, Yue

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The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs von Zhang, Meng, Wang, Haozheng, Yang, Ling, Hou, Bin, Wu, Mei, Zhu, Qing, Mi, Minhan, Zou, Xu, Shi, Chunzhou, Yu, Qian, Liu, Wenliang, Lu, Hao, Ma, Xiaohua, Hao, Yue

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Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications von Zhang, Meng, Chen, Yilin, Guo, Siyin, Lu, Hao, Zhu, Qing, Mi, Minhan, Wu, Mei, Hou, Bin, Yang, Ling, Ma, Xiaohua, Hao, Yue

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High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications von Pengfei Wang, Minhan Mi, Meng Zhang, Jiejie Zhu, Yuwei Zhou, Jielong Liu, Sijia Liu, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao

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InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications von Gong, Can, Mi, Minhan, Zhou, Yuwei, Wang, Pengfei, Chen, Yilin, Liu, Jielong, Han, Yutong, An, Sirui, Guo, Siyin, Zhang, Meng, Zhu, Qing, Yang, Mei, Ma, Xiaohua, Hao, Yue

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Investigation on the Influence of Ohmic Structure on Channel-to-Channel Coupling Effect in InAlN/GaN Double Channel HEMTs von Yang, Ling, Lu, Hao, Zhang, Meng, Niu, Xuerui, Shi, Chuzhou, Hou, Bin, Mi, Minhan, Wu, Mei, Zhu, Qing, Lu, Yang, Lv, Ling, Cheng, Kai, Ma, Xiaohua, Hao, Yue

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