Processing of photonic crystal nanocavity for quantum information in diamond von Bayn, Igal, Meyler, Boris, Lahav, Alex, Salzman, Joseph, Kalish, Rafi, Fairchild, Barbara A., Prawer, Steven, Barth, Michael, Benson, Oliver, Wolf, Thomas, Siyushev, Petr, Jelezko, Fedor, Wrachtrup, Jorg

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Triangular nanobeam photonic cavities in single-crystal diamond von Bayn, Igal, Meyler, Boris, Salzman, Joseph, Kalish, Rafi

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Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length von Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Yang, Jiancheng, Ren, Fan, Pearton, Stephen J., Meyler, Boris, Salzman, Y. Joseph

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High-voltage metal-insulator-metal capacitor based on crystalline HfAlOx film grown by atomic layer deposition von Lisiansky, Michael, Popov, Inna, Uvarov, Vladimir, Korchnoy, Valentina, Meyler, Boris, Yofis, Svetlana, Shneider, Yacov

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High-voltage metal-insulator-metal capacitor based on crystalline HfAlO x film grown by atomic layer deposition von Lisiansky, Michael, Popov, Inna, Uvarov, Vladimir, Korchnoy, Valentina, Meyler, Boris, Yofis, Svetlana, Shneider, Yacov

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The electrostatics of Ta2O5 in Si-based metal oxide semiconductor devices von Kornblum, Lior, Meyler, Boris, Salzman, Joseph, Eizenberg, Moshe

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Effects of Gamma Irradiation on AlGaN-Based High Electron Mobility Transistors von Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Salzman, Joseph, Meyler, Boris

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Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices von Kornblum, Lior, Meyler, Boris, Cytermann, Catherine, Yofis, Svetlana, Salzman, Joseph, Eizenberg, Moshe

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Dynamical Properties of Optically Sensitive Metal-Insulator-Semiconductor Nonvolatile Memories Based on Pt Nanoparticles von Padmanabhan, Revathy, Eyal, Ori, Meyler, Boris, Yofis, Svetlana, Atiya, Galit, Kaplan, Wayne D., Mikhelashvili, Vissarion, Eisenstein, G.

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Optical Signature of the Electron Injection in Ga2O3 von Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Ahn, Shihyun, Ren, Fan, Yuna, Lin, Pearton, Stephen J., Kim, Jihyun, Meyler, Boris, Salzman, Joseph

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Investigation of the band offsets caused by thin Al 2 O 3 layers in HfO 2 based Si metal oxide semiconductor devices von Kornblum, Lior, Meyler, Boris, Cytermann, Catherine, Yofis, Svetlana, Salzman, Joseph, Eizenberg, Moshe

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Optical Signature of the Electron Injection in Ga 2 O 3 von Lee, Jonathan, Flitsiyan, Elena, Chernyak, Leonid, Ahn, Shihyun, Ren, Fan, Yuna, Lin, Pearton, Stephen J., Kim, Jihyun, Meyler, Boris, Salzman, Joseph

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Characteristics of InxAl1-xN-GaN high-electron mobility field-effect transistor von KATZ, Oded, MISTELE, David, MEYLER, Boris, BAHIR, Gad, SALZMAN, Joseph

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Ultra-high-Q triangular cross-section nanobeam photonic cavities in single crystal diamond von Bayn, Igal, Meyler, Boris, Salzman, Joseph, Kalish, Rafi

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Tunneling Emitter Bipolar Transistor as a Characterization Tool for Dielectrics and their Interfaces von Yalon, Eilam, Gavrilov, Arkadi, Cohen, Shimon, Mistele, David, Mikhelashvili, Vissarion, Meyler, Boris, Salzman, Joseph, Ritter, Dan

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Nonvolatile Memory Capacitors Based on Double Gold nanocrystals and HfO 2 Tunneling and HfNO/HfTiO Laminate Control High-k Insulator Layers von Mikhelashvili, Vissarion, Meyler, Boris, Salzman, Jossef, Garbrecht, Magnus, Cohen-Hyams, T., Kaplan, Wayne, Eisenstein, Gadi

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Microstructure of GaN deposited by laterial confined epitaxy on patterned Si (111) von Wu, Feng, Zamir, Shai, Meyler, Boris, Salzman, Joseph, Golan, Yuval

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Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire von FENG WU, ZAMIR, Shai, MEYLER, Boris, SALZMAN, Joseph, GOLAN, Yuval

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Microstructure of GaN deposited by lateral confined epitaxy on patterned Si(111) von FENG WU, ZAMIR, Shai, MEYLER, Boris, SALZMAN, Joseph, GOLAN, Yuval

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Triangular nanobeam photonic cavities in single crystal diamond von Bayn, Igal, Meyler, Boris, Salzman, Joseph, Kalish, Rafi

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