Embedding Innovation in Corporate DNA von Meyerson, Bernard

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Cooperative growth phenomena in silicon/germanium low-temperature epitaxy von MEYERSON, B. S, URAM, K. J, LEGOUES, F. K

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Bistable conditions for low-temperature silicon epitaxy von MYERSON, B. S, HIMPSEL, F. J, URAM, K. J

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On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications - part I: transistor DC design considerations von Cressler, John D, Comfort, James H, Crabbe, Emmanuel F, Patton, Gary L, Stork, Johannes M C, Sun, Jack Y-C, Meyerson, Bernard S

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Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire von Mathew, S.J., Guofu Niu, Dubbelday, W.B., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., Lagnado, I.

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UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications von Meyerson, B.S.

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SiGe-channel heterojunction p-MOSFET's von Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B.

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Mapping Innovation: A Playbook For Navigating A Disruptive Age von Satell, Greg

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Special Issue on Silicon Germanium-Advanced Technology, Modeling, and Design von Singh, R.S., Harame, D.L., Meyerson, B.S.

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Silane pyrolysis rates for the modeling of chemical vapor deposition von MEYERSON, B. S, JASINSKI, J. M

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Heterojunction bipolar transistors using Si-Ge alloys von Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S., Harame, D.L.

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75-GHz fT SiGe-base heterojunction bipolar transistors von PATTON, G. L, COMFORT, J. H, MEYERSON, B. S, CRABBE, E. F, SCILLA, G. J, DE FRESART, E, STORK, J. M. C, SUN, J. Y.-C, HARAME, D. L, BURGHARTZ, J. N

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SiGe heterojunctions: devices and applications von Arienzo, Maurizio, Comfort, James H., Crabbé, Emmanuel F., Harame, David L., Iyer, Subramanian S., Kesan, Vijay P., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C., Sun, Yuan-Chen

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BOTS THAT ARGUE AND INSTRUCT von Meyerson, Bernard S.

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High-mobility modulation-doped graded SiGe-channel p-MOSFET's von VERDOCKT-VANDEBROEK, S, CRABBE, E. F, WARREN, A. C, MEYERSON, B. S, HARAME, D. L, RESTLE, P. J, STORK, J. M. C, MEGDANIS, A. C, STANIS, C. L, BRIGHT, A. A, KROESEN, G. M. W

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73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters von Crabbe, E.F., Comfort, J.H., Lee, W., Cressler, J.D., Meyerson, B.S., Megdanis, A.C., Sun, J.Y.-C., Stork, J.M.C.

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High-Speed Silicon-Germanium Electronics von Meyerson, Bernard S.

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Top 10 Emerging Technologies of 2017 von DiChristina, Mariette, Meyerson, Bernard S

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50–200 GHz Silicon–Germanium Heterojunction Bipolar Transistor BICMOS Technology and a Computer-Aided Design Environment for 2–50+ GHz Very Large-Scale Integration Mixed-Signal ICs... von Subbanna, Seshadri, Freeman, Gregory, Rieh, Jae-Sung, Ahlgren, David, Stein, Kenneth, Dickey, Carl, Mecke, James, Bacon, Peter, Groves, Robert, Meghelli, Mounir, Soyuer, Mehmet, Jagannathan, Basanth, Schonenberg, Kathryn, Jeng, Shwu-Jen, Joseph, Alvin, Coolbaugh, Douglas, Volant, Richard, Greenberg, David, Chen, Huajie, Brelsford, Kevin, Harame, David, Dunn, James, Larson, Lawrence, Herman, Dean, Meyerson, Bernard

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SiGe alloys: growth, properties and applications von Arienzo, Maurizio, Iyer, Subramanian S., Meyerson, Bernard S., Patton, Gary L., Stork, Johannes M.C.

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