The early history of IBM's SiGe mixed signal technology von Harame, D.L., Meyerson, B.S.

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UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications von Meyerson, B.S.

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Anomalous strain relaxation in SiGe thin films and superlattices von LEGOUES, F. K, MEYERSON, B. S, MORAR, J. F

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Extremely high electron mobility in Si/SiGe modulation-doped heterostructures von Ismail, K., Arafa, M., Saenger, K. L., Chu, J. O., Meyerson, B. S.

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Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition von MEYERSON, B. S

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High hole mobility in SiGe alloys for device applications von Ismail, K., Chu, J. O., Meyerson, B. S.

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SiGe-channel heterojunction p-MOSFET's von Verdonckt-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B.

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Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices von LEGOUES, F. K, MEYERSON, B. S, MORAR, J. F, KIRCHNER, P. D

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Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures von Ismail, K, LeGoues, FK, Saenger, KL, Arafa, M, Chu, JO, Mooney, PM, Meyerson, BS

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Cooperative growth phenomena in silicon/germanium low-temperature epitaxy von MEYERSON, B. S, URAM, K. J, LEGOUES, F. K

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Electron transport properties of Si/SiGe heterostructures : measurements and device implications von ISMAIL, K, NELSON, S. F, CHU, J. O, MEYERSON, B. S

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Oxidation studies of SiGe von LEGOUES, F. K, ROSENBERG, R, NGUYEN, T, HIMPSEL, F, MEYERSON, B. S

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Heterojunction bipolar transistors using Si-Ge alloys von Iyer, S.S., Patton, G.L., Stork, J.M.C., Meyerson, B.S., Harame, D.L.

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High electron mobility in modulation-doped Si/SiGe von ISMAIL, K, MEYERSON, B. S, WANG, P. J

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75-GHz fT SiGe-base heterojunction bipolar transistors von PATTON, G. L, COMFORT, J. H, MEYERSON, B. S, CRABBE, E. F, SCILLA, G. J, DE FRESART, E, STORK, J. M. C, SUN, J. Y.-C, HARAME, D. L, BURGHARTZ, J. N

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Bistable conditions for low-temperature silicon epitaxy von MYERSON, B. S, HIMPSEL, F. J, URAM, K. J

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Electron resonant tunneling in Si/SiGe double barrier diodes von ISMAIL, K, MEYERSON, B. S, WANG, P. J

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Room-temperature electron mobility in strained Si/SiGe heterostructures von NELSON, S. F, ISMAIL, K, CHU, J. O, MEYERSON, B. S

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High speed p-type SiGe modulation-doped field-effect transistors von Arafa, M., Fay, P., Ismail, K., Chu, J.O., Meyerson, B.S., Adesida, I.

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High-performance Si/SiGe n-type modulation-doped transistors von Ismail, K., Rishton, S., Chu, J.O., Chan, K., Meyerson, B.S.

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