Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge von Igumbor, E., Dongho-Nguimdo, G. M., Mapasha, R. E., Meyer, W. E.

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Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS von Mtangi, W., Auret, F. D., Meyer, W. E., Legodi, M. J., Janse van Rensburg, P. J., Coelho, S. M. M., Diale, M., Nel, J. M.

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Determination of capture barrier energy of the E-center in palladium Schottky barrier diodes of antimony-doped germanium by varying the pulse width von Omotoso, E, Paradzah, A T, Igumbor, E, Taleatu, B A, Meyer, W E, Auret, F D

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Effects of high temperature annealing on single crystal ZnO and ZnO devices von Mtangi, W., Auret, F. D., Diale, M., Meyer, W. E., Chawanda, A., de Meyer, H., Janse van Rensburg, P. J., Nel, J. M.

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Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique von Ahmed, Mustafa A. M., Meyer, W. E., Nel, J. M.

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The dependence of barrier height on temperature for Pd Schottky contacts on ZnO von Mtangi, W., Auret, F.D., Nyamhere, C., Janse van Rensburg, P.J., Chawanda, A., Diale, M., Nel, J.M., Meyer, W.E.

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Electrical characterization of vapor-phase-grown single-crystal ZnO von Auret, F. D., Goodman, S. A., Legodi, M. J., Meyer, W. E., Look, D. C.

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Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon von Abdurrazaq, A., Meyer, W.E.

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Rare Earth Interstitials in Ge: A Hybrid Density Functional Theory Study von Igumbor, E., Andrew, R. C., Meyer, W. E.

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Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS von Pienaar, J., Meyer, W.E., Auret, F.D., Coelho, S.M.M.

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Characterization of AlGaN-based metal–semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts von van Schalkwyk, L., Meyer, W.E., Auret, F.D., Nel, J.M., Ngoepe, P.N.M., Diale, M.

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Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC von Igumbor, E, Olaniyan, O, Mapasha, R E, Danga, H T, Omotoso, E, Meyer, W E

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Laplace DLTS study of the fine structure and metastability of the radiation-induced E3 defect level in GaAs von Taghizadeh, F, Ostvar, K, Auret, F D, Meyer, W E

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Optoelectronic characterization of Au/Ni/n-AlGaN photodiodes after annealing at different temperatures von Ngoepe, P.N.M., Meyer, W.E., Diale, M., Auret, F.D., van Schalkwyk, L.

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Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures von Ngoepe, PNM, Meyer, WE, Diale, M, Auret, FD, van Schalkwyk, L

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Inductively coupled plasma induced deep levels in epitaxial n-GaAs von Auret, F.D., Janse van Rensburg, P.J., Meyer, W.E., Coelho, S.M.M., Kolkovsky, Vl, Botha, J.R., Nyamhere, C., Venter, A.

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Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes von Paradzah, A. T., Omotoso, E., Legodi, M. J., Auret, F. D., Meyer, W. E., Diale, M.

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The influence of thermal annealing on the characteristics of Au/Ni Schottky contacts on n-type 4H-SiC von Omotoso, E., Auret, F. D., Igumbor, E., Tunhuma, S. M., Danga, H. T., Ngoepe, P. N. M., Taleatu, B. A., Meyer, W. E.

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Ab‐initio study of germanium di-interstitial using a hybrid functional (HSE) von Igumbor, E., Ouma, C.N.M., Webb, G., Meyer, W.E.

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Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences von Omotoso, E., Meyer, W.E., Auret, F.D., Diale, M., Ngoepe, P.N.M.

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