Basic Research Perspective on Quantum Information Science for the Aerospace Community von Metcalfe, Grace D., Tabakov, Boyan, Nguyen, Tristan, Lu, Jiwei, Sayir, Ali

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Optically tunable metamaterial perfect absorber on highly flexible substrate von Zhao, Xiaoguang, Fan, Kebin, Zhang, Jingdi, Seren, Huseyin R., Metcalfe, Grace D., Wraback, Michael, Averitt, Richard D., Zhang, Xin

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Optically Modulated Multiband Terahertz Perfect Absorber von Seren, Huseyin R, Keiser, George R, Cao, Lingyue, Zhang, Jingdi, Strikwerda, Andrew C, Fan, Kebin, Metcalfe, Grace D, Wraback, Michael, Zhang, Xin, Averitt, Richard D

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Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence von Connelly, Blair C., Metcalfe, Grace D., Shen, Hongen, Wraback, Michael

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Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence von Connelly, Blair C., Metcalfe, Grace D., Shen, Hongen, Wraback, Michael, Canedy, Chadwick L., Vurgaftman, Igor, Melinger, Joseph S., Affouda, Chaffra A., Jackson, Eric M., Nolde, Jill A., Meyer, Jerry R., Aifer, Edward H.

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Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density von Connelly, Blair C., Steenbergen, Elizabeth H., Smith, Howard E., Elhamri, Said, Mitchel, William C., Mou, Shin, Metcalfe, Grace D., Brown, Gail J., Wraback, Michael

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Nonlinear terahertz metamaterial perfect absorbers using GaAs[Invited] von Zhao, Xiaoguang, Zhang, Jingdi, Fan, Kebin, Duan, Guangwu, Metcalfe, Grace D., Wraback, Michael, Zhang, Xin, Averitt, Richard D.

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Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field von Metcalfe, Grace D, Shen, Hongen, Wraback, Michael, Koblmüller, Gregor, Gallinat, Chad, Wu, Feng, Speck, James S

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Terahertz studies of carrier localization in spontaneously forming polar lateral heterostructures von Metcalfe, Grace D., Hirai, Asako, Young, Erin C., Speck, James S., Shen, Hongen, Wraback, Michael

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Evidence of lateral electric fields in c -plane III-V nitrides via terahertz emission von Woodward, Nathaniel, Enck, Ryan, Gallinat, Chad S., Rodak, Lee E., Metcalfe, Grace D., Speck, James S., Shen, Hongen, Wraback, Michael

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Time-resolved electroabsorption measurement of carrier velocity in inverted polarity In1-xGax N/GaN heterostructures due to internal electric fields von Connelly, Blair C., Gallinat, Chad S., Woodward, Nathaniel T., Enck, Ryan W., Metcalfe, Grace D., Tompkins, Randy, Jones, Kenneth A., Shen, Hongen, Wraback, Michael

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Enhanced terahertz radiation from high stacking fault density nonpolar GaN von Metcalfe, Grace D., Shen, Hongen, Wraback, Michael, Hirai, Asako, Wu, Feng, Speck, James S.

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Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization von Metcalfe, Grace D., Shen, Hongen, Wraback, Michael, Hirai, Asako, Koblmüller, Gregor, Gallinat, Chad S., Speck, James S.

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Crystal-field split levels of Nd3+ ions in GaN measured by luminescence spectroscopy von Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Woodward, Nathaniel T., Dierolf, Volkmar, Wraback, Michael

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Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice von Klein, Brianna, Gautam, Nutan, Plis, Elena, Schuler-Sandy, Ted, Rotter, Thomas J., Krishna, Sanjay, Connelly, Blair C., Metcalfe, Grace D., Shen, Paul, Wraback, Michael

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Optically Tunable Terahertz Metamaterials on Highly Flexible Substrates von Kebin Fan, Xiaoguang Zhao, Jingdi Zhang, Kun Geng, Keiser, George R., Seren, Huseyin R., Metcalfe, Grace D., Wraback, Michael, Xin Zhang, Averitt, Richard D.

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Crystal-field split levels of Nd{sup 3+} ions in GaN measured by luminescence spectroscopy von Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Wraback, Michael, Woodward, Nathaniel T., Dierolf, Volkmar

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Dependence of minority carrier lifetime of Be-doped InAs/InAsSb type-II infrared superlattices on temperature and doping density: Minority carrier lifetime of Be-doped InAs/InAsSb... von Connelly, Blair C., Steenbergen, Elizabeth H., Smith, Howard E., Elhamri, Said, Mitchel, William C., Mou, Shin, Metcalfe, Grace D., Brown, Gail J., Wraback, Michael

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Crystal-field split levels of Nd 3 + ions in GaN measured by luminescence spectroscopy von Metcalfe, Grace D., Readinger, Eric D., Shen, Hongen, Woodward, Nathaniel T., Dierolf, Volkmar, Wraback, Michael

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Time‐resolved electroabsorption measurement of carrier velocity in inverted polarity In 1‐ x Ga x N/GaN heterostructures due to internal electric fields von Connelly, Blair C., Gallinat, Chad S., Woodward, Nathaniel T., Enck, Ryan W., Metcalfe, Grace D., Tompkins, Randy, Jones, Kenneth A., Shen, Hongen, Wraback, Michael

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