Silicon-germanium molecular beam epitaxy system for high-quality nanostructures and devices von Rupp, T., Messarosch, J., Eisele, I.

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Influence of substrate misorientation and temperature on MBE-grown Si von Zeindl, H.P., Fuenzalida, V., Messarosch, J., Eisele, I., Oppolzer, H., Huber, V.

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Vertical MOS-gated pin-diodes: MOS-gated tunneling transistors in Si(100) and Si(111) von Schulze, J, Fink, C, Sulima, T, Eisele, I, Hansch, W

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The vertical concept of power MOSFETs von Tolksdorf, C, Fink, C, Schulze, J, Sedlmaier, S, Hansch, W, Werner, W, Kanert, W, Eisele, I

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Self assembling growth of triangular pyramidal ge islands on a Si(111)– [formula omitted]× [formula omitted]–R30°–B surface phase von Schulze, J, Stimpel, T, Baumgärtner, H, Eisele, I

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SiGe wires and dots grown by local epitaxy von Brunner, J., Schittenhelm, P., Gondermann, J., Spangenberg, B., Hadam, B., Köster, T., Roskos, H.G., Kurz, H., Gossner, H., Eisele, I., Abstreiter, G.

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Low temperature epitaxial growth by molecular beam epitaxy on hydrogen-plasma-cleaned silicon wafers von Ramm, J., Beck, E., Dommann, A., Eisele, I., Krüger, D.

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Strain relaxation and self-organizing MBE-growth of local SiGe-structures von Rupp, T., Eisele, I., Gravesteijn, D.J.

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Defect-free strain relaxation in locally MBE-grown SiGe heterostructures von Rupp, T, Kaesen, F, Hansch, W, Hammerl, E, Gravesteijn, D.J, Schorer, R, Silveira, E, Abstreiter, G, Eisele, I

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Nanometer scale local epitaxy with silicon MBE von Hammerl, E., Wittmann, F., Eisele, I., Heinzel, T., Kühn, S., Lorenz, H., Kotthaus, J.P.

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Stress-induced indirect to direct band gap transition in β-FeSi2 nanocrystals embedded in Si von Shevlyagin, A. V., Goroshko, D. L., Chusovitin, E. A., Balagan, S. A., Dotsenko, S. A., Galkin, K. N., Galkin, N. G., Shamirzaev, T. S., Gutakovskii, A. K., Iinuma, M., Terai, Y.

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Photoluminescence spectra of shadow masked multiple quantum wells von Sopitpan, S., Cheewatas, P., Thainoi, S., Ratanathammaphan, S., Panyakeow, S.

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Silicon molecular beam epitaxial growth on ultra-small mesa structures von Avrutin, V.S., Izumskaya, N.F., Vyatkin, A.F., Yunkin, V.A.

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MBE-grown vertical silicon MOSFETs with sub-0.3 μm channel lengths von Kiunke, W., Hammerl, E., Eisele, I.

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Modulation-doped superlattices with delat layers in silicon von Zeindl, H.P., Wegehaupt, T., Eisele, I.

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Structural and electronic properties of CdTe-based heterostructures von Magnea, N., Tardot, A., Mariette, H., Pelekanos, N.

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