SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits von McJunkin, Thomas, Harpt, Benjamin, Feng, Yi, Losert, Merritt P., Rahman, Rajib, Dodson, J. P., Wolfe, M. A., Savage, D. E., Lagally, M. G., Coppersmith, S. N., Friesen, Mark, Joynt, Robert, Eriksson, M. A.

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Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots von Paquelet Wuetz, Brian, Losert, Merritt P., Koelling, Sebastian, Stehouwer, Lucas E. A., Zwerver, Anne-Marije J., Philips, Stephan G. J., Mądzik, Mateusz T., Xue, Xiao, Zheng, Guoji, Lodari, Mario, Amitonov, Sergey V., Samkharadze, Nodar, Sammak, Amir, Vandersypen, Lieven M. K., Rahman, Rajib, Coppersmith, Susan N., Moutanabbir, Oussama, Friesen, Mark, Scappucci, Giordano

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Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells von Klos, Jan, Tröger, Jan, Keutgen, Jens, Losert, Merritt P., Abrosimov, Nikolay V., Knoch, Joachim, Bracht, Hartmut, Coppersmith, Susan N., Friesen, Mark, Cojocaru‐Mirédin, Oana, Schreiber, Lars R., Bougeard, Dominique

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How Valley-Orbit States in Silicon Quantum Dots Probe Quantum Well Interfaces von Dodson, J P, Ercan, H Ekmel, Corrigan, J, Losert, Merritt P, Holman, Nathan, McJunkin, Thomas, Edge, L F, Friesen, Mark, Coppersmith, S N, Eriksson, M A

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Effect of Quantum Hall Edge Strips on Valley Splitting in Silicon Quantum Wells von Wuetz, Brian Paquelet, Losert, Merritt P., Tosato, Alberto, Lodari, Mario, Bavdaz, Peter L., Stehouwer, Lucas, Amin, Payam, Clarke, James S., Coppersmith, Susan N., Sammak, Amir, Veldhorst, Menno, Friesen, Mark, Scappucci, Giordano

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Strategies for Enhancing Spin-Shuttling Fidelities in Si/SiGe Quantum Wells with Random-Alloy Disorder von Merritt P. Losert, Max Oberländer, Julian D. Teske, Mats Volmer, Lars R. Schreiber, Hendrik Bluhm, S.N. Coppersmith, Mark Friesen

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Practical strategies for enhancing the valley splitting in Si/SiGe quantum wells von Losert, Merritt P., Eriksson, M. A., Joynt, Robert, Rahman, Rajib, Scappucci, Giordano, Coppersmith, Susan N., Friesen, Mark

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Strategies for Enhancing Spin-Shuttling Fidelities in Si / Si Ge Quantum Wells with Random-Alloy Disorder von Losert, Merritt P., Oberländer, Max, Teske, Julian D., Volmer, Mats, Schreiber, Lars R., Bluhm, Hendrik, Coppersmith, S.N., Friesen, Mark

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Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling von Oda, Yasuo, Losert, Merritt P, Kestner, Jason P

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Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells von Németh, Róbert, Bandaru, Vatsal K, Alves, Pedro, Losert, Merritt P, Brann, Emma, Eskandari, Owen M, Soomro, Hudaiba, Vivrekar, Avani, Eriksson, M. A, Friesen, Mark

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Reducing strain fluctuations in quantum dot devices by gate-layer stacking von Frink, Collin C. D, Woods, Benjamin D, Losert, Merritt P, MacQuarrie, E. R, Eriksson, M. A, Friesen, Mark

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Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder von Losert, Merritt P, Oberländer, Max, Teske, Julian D, Volmer, Mats, Schreiber, Lars R, Bluhm, Hendrik, Coppersmith, S N, Friesen, Mark

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Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling von Oda, Yasuo, Losert, Merritt P, Kestner, Jason P

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Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells von Losert, Merritt P, Eriksson, M A, Joynt, Robert, Rahman, Rajib, Giordano Scappucci, Coppersmith, Susan N, Friesen, Mark

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Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells von Klos, Jan, Tröger, Jan, Keutgen, Jens, Losert, Merritt P, Riemann, Helge, Abrosimov, Nikolay V, Knoch, Joachim, Bracht, Hartmut, Coppersmith, Susan N, Friesen, Mark, Cojocaru-Mirédin, Oana, Schreiber, Lars R, Bougeard, Dominique

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SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits von McJunkin, Thomas, Harpt, Benjamin, Feng, Yi, Losert, Merritt P, Rahman, Rajib, Dodson, J P, Wolfe, M A, Savage, D E, Lagally, M G, Coppersmith, S N, Friesen, Mark, Joynt, Robert, Eriksson, M A

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Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots von Wuetz, Brian Paquelet, Losert, Merritt P, Koelling, Sebastian, Stehouwer, Lucas E A, Zwerver, Anne-Marije J, Philips, Stephan G J, Mądzik, Mateusz T, Xue, Xiao, Zheng, Guoji, Lodari, Mario, Amitonov, Sergey V, Samkharadze, Nodar, Sammak, Amir, Vandersypen, Lieven M K, Rahman, Rajib, Coppersmith, Susan N, Moutanabbir, Oussama, Friesen, Mark, Giordano Scappucci

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Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells von Németh, Róbert, Bandaru, Vatsal K, Alves, Pedro, Losert, Merritt P, Brann, Emma, Eskandari, Owen M, Soomro, Hudaiba, Vivrekar, Avani, Eriksson, M A, Friesen, Mark

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Reducing strain fluctuations in quantum dot devices by gate-layer stacking von Frink, Collin C D, Woods, Benjamin D, Losert, Merritt P, MacQuarrie, E R, Friesen, Mark, Eriksson, M A

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Effect of quantum Hall edge strips on valley splitting in silicon quantum wells von Wuetz, Brian Paquelet, Losert, Merritt P, Tosato, Alberto, Lodari, Mario, Bavdaz, Peter L, Stehouwer, Lucas, Amin, Payam, Clarke, James S, Coppersmith, Susan N, Sammak, Amir, Veldhorst, Menno, Friesen, Mark, Giordano Scappucci

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