Two-dimensional ferroelectric MoS2/Ga2O3 heterogeneous bilayers with highly tunable photocatalytic and electrical properties von Chen, Haohao, Zhao, Junlei, Wang, Xinyu, Chen, Xiaolong, Zhang, Zhaofu, Mengyuan Hua

Volltext

E-mode p-n Junction/AlGaN/GaN (PNJ) HEMTs von Wang, Chengcai, Hua, Mengyuan, Chen, Junting, Yang, Song, Zheng, Zheyang, Wei, Jin, Zhang, Li, Chen, Kevin J.

Volltext

Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth von Zhang, Jun, Zhao, Junlei, Chen, Junting, Hua, Mengyuan

Volltext

Gate-Bias Induced Threshold Voltage (VTH) Instability in P-N Junction/AlGaN/GaN HEMT von Jiang, Zuoheng, Li, Lingling, Wang, Chengcai, Zhao, Junlei, Hua, Mengyuan

Volltext

The impact of buffer thickness upon the transport-limited buffer trapping effects in carbon-doped power GaN-on-Si devices von Liu, Junbo, Zou, Wensong, Chen, Jiawei, Hua, Mengyuan, Lu, Di, Ma, Jun

Volltext

Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs von Jiang, Zuoheng, Hua, Mengyuan, Huang, Xinran, Li, Lingling, Wang, Chengcai, Chen, Junting, Chen, Kevin J.

Volltext

Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier von Liu, Qi, Zhou, Xuanze, He, Qiming, Hao, Weibing, Zhao, Xiaolong, Mengyuan Hua, Xu, Guangwei, Long, Shibing

Volltext

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode von Lei, Jiacheng, Wei, Jin, Tang, Gaofei, Zhang, Zhaofu, Qian, Qingkai, Zheng, Zheyang, Hua, Mengyuan, Chen, Kevin J.

Volltext

GaN Power Integration Technology and Its Future Prospects von Wei, Jin, Zheng, Zheyang, Tang, Gaofei, Xu, Han, Lyu, Gang, Zhang, Li, Chen, Junting, Hua, Mengyuan, Feng, Sirui, Chen, Tao, Chen, Kevin J.

Volltext

Bridging the gap between atomically thin semiconductors and metal leads von Cai, Xiangbin, Wu, Zefei, Han, Xu, Chen, Yong, Xu, Shuigang, Lin, Jiangxiazi, Han, Tianyi, He, Pingge, Feng, Xuemeng, An, Liheng, Shi, Run, Wang, Jingwei, Ying, Zhehan, Cai, Yuan, Hua, Mengyuan, Liu, Junwei, Pan, Ding, Cheng, Chun, Wang, Ning

Volltext

Formation and Applications in Electronic Devices of Lattice‐Aligned Gallium Oxynitride Nanolayer on Gallium Nitride von Chen, Junting, Zhao, Junlei, Feng, Sirui, Zhang, Li, Cheng, Yan, Liao, Hang, Zheng, Zheyang, Chen, Xiaolong, Gao, Zhen, Chen, Kevin J., Hua, Mengyuan

Volltext

An Actively-Passivated p-GaN Gate HEMT with Screening Effect against Surface Traps von Wu, Yanlin, Wei, Jin, Wang, Maojun, Nuo, Muqin, Yang, Junjie, Lin, Wei, Zheng, Zheyang, Zhang, Li, Hua, Mengyuan, Yang, Xuelin, Hao, Yilong, Chen, Kevin J., Shen, Bo

Volltext

High Performance GaN-on-Si Voltage Sensors von Liu, Junbo, Liu, Zhaojun, Hua, Mengyuan, Jia, Youwei, Ma, Jun, Yu, Ming

Volltext

Design of multi-channel heterostructures for GaN devices von Tang, Jinjin, Zou, Wensong, Xiang, Peng, Cheng, Kai, Hua, Mengyuan, Ma, Jun

Volltext

Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures von Jiang, Zuoheng, Wang, Xinyu, Zhao, Junlei, Chen, Junting, Tang, Jinjin, Wang, Chengcai, Chen, Haohao, Huang, Sen, Chen, Xiaolong, Hua, Mengyuan

Volltext

Electroluminescence and Gate Carrier Dynamics in a Schottky-type p-GaN Gate Double-Channel GaN HEMT von Feng, Sirui, Liao, Hang, Chen, Tao, Chen, Junting, Cheng, Yan, Hua, Mengyuan, Zheng, Zheyang, Chen, Kevin J.

Volltext

O3-sourced atomic layer deposition of high quality Al2O3 gate dielectric for normally-off GaN metal-insulator-semiconductor high-electron-mobility transistors von Huang, Sen, Liu, Xinyu, Wei, Ke, Liu, Guoguo, Wang, Xinhua, Sun, Bing, Yang, Xuelin, Shen, Bo, Liu, Cheng, Liu, Shenghou, Hua, Mengyuan, Yang, Shu, Chen, Kevin J.

Volltext

OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs von Chen, Junting, Hua, Mengyuan, Wei, Jin, He, Jiabei, Wang, Chengcai, Zheng, Zheyang, Chen, Kevin J.

Volltext

Normally-Off LPCVD-SiNx/GaN MIS-FET With Crystalline Oxidation Interlayer von Mengyuan Hua, Jin Wei, Gaofei Tang, Zhaofu Zhang, Qingkai Qian, Xiangbin Cai, Ning Wang, Chen, Kevin J.

Volltext

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs von Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Chen, Kevin J.

Volltext