Steep-slope hysteresis-free negative capacitance MoS2 transistors von Si, Mengwei, Su, Chun-Jung, Jiang, Chunsheng, Conrad, Nathan J., Zhou, Hong, Maize, Kerry D., Qiu, Gang, Wu, Chien-Ting, Shakouri, Ali, Alam, Muhammad A., Ye, Peide D.

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A critical review of recent progress on negative capacitance field-effect transistors von Alam, Muhammad A., Si, Mengwei, Ye, Peide D.

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Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene von Qiu, Gang, Niu, Chang, Wang, Yixiu, Si, Mengwei, Zhang, Zhuocheng, Wu, Wenzhuo, Ye, Peide D.

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High-Performance Depletion/Enhancement-ode \beta -Ga2O3 on Insulator (GOOI) Field-Effect Transistors With Record Drain Currents of 600/450 mA/mm von Hong Zhou, Mengwei Si, Alghamdi, Sami, Gang Qiu, Lingming Yang, Ye, Peide D.

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Ultra-wide bandgap semiconductor Ga2O3 power diodes von Zhang, Jincheng, Dong, Pengfei, Dang, Kui, Zhang, Yanni, Yan, Qinglong, Xiang, Hu, Su, Jie, Liu, Zhihong, Si, Mengwei, Gao, Jiacheng, Kong, Moufu, Zhou, Hong, Hao, Yue

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Ultrafast measurements of polarization switching dynamics on ferroelectric and anti-ferroelectric hafnium zirconium oxide von Si, Mengwei, Lyu, Xiao, Shrestha, Pragya R., Sun, Xing, Wang, Haiyan, Cheung, Kin P., Ye, Peide D.

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Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure von Si, Mengwei, Liao, Pai-Ying, Qiu, Gang, Duan, Yuqin, Ye, Peide D

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Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors von Si, Mengwei, Hu, Yaoqiao, Lin, Zehao, Sun, Xing, Charnas, Adam, Zheng, Dongqi, Lyu, Xiao, Wang, Haiyan, Cho, Kyeongjae, Ye, Peide D.

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Al2O3/ \beta -Ga2O3(-201) Interface Improvement Through Piranha Pretreatment and Postdeposition Annealing von Hong Zhou, Alghamdi, Sami, Mengwei Si, Gang Qiu, Ye, Peide D.

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Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor von Si, Mengwei, Jiang, Chunsheng, Chung, Wonil, Du, Yuchen, Alam, Muhammad A, Ye, Peide D

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Overview and outlook of emerging non-volatile memories von Si, Mengwei, Cheng, Huai-Yu, Ando, Takashi, Hu, Guohan, Ye, Peide D.

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Performance Potential and Limit of MoS2 Transistors von Li, Xuefei, Yang, Lingming, Si, Mengwei, Li, Sichao, Huang, Mingqiang, Ye, Peide, Wu, Yanqing

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Molecular Doping of Multilayer MoS2 Field-Effect Transistors: Reduction in Sheet and Contact Resistances von YUCHEN DU, HAN LIU, NEAL, Adam T, MENGWEI SI, YE, Peide D

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The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights von Liu, Han, Neal, Adam T., Si, Mengwei, Du, Yuchen, Ye, Peide D.

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Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in a Ferroelectric/Dielectric Stack von Si, Mengwei, Lyu, Xiao, Ye, Peide D

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Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films von Liu, Han, Si, Mengwei, Najmaei, Sina, Neal, Adam T, Du, Yuchen, Ajayan, Pulickel M, Lou, Jun, Ye, Peide D

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Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid-State Refrigeration von Si, Mengwei, Saha, Atanu K, Liao, Pai-Ying, Gao, Shengjie, Neumayer, Sabine M, Jian, Jie, Qin, Jingkai, Balke Wisinger, Nina, Wang, Haiyan, Maksymovych, Petro, Wu, Wenzhuo, Gupta, Sumeet K, Ye, Peide D

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Polarization switching in Hf0.5Zr0.5O2-dielectric stack: The role of dielectric layer thickness von Saha, Atanu K., Si, Mengwei, Ye, Peide D., Gupta, Sumeet K.

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Raman response and transport properties of tellurium atomic chains encapsulated in nanotubes von Qin, Jing-Kai, Liao, Pai-Ying, Si, Mengwei, Gao, Shiyuan, Qiu, Gang, Jian, Jie, Wang, Qingxiao, Zhang, Si-Qi, Huang, Shouyuan, Charnas, Adam, Wang, Yixiu, Kim, Moon J., Wu, Wenzhuo, Xu, Xianfan, Wang, Hai-Yan, Yang, Li, Khin Yap, Yoke, Ye, Peide D.

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A tunable ferroelectric based unreleased RF resonator von He, Yanbo, Bahr, Bichoy, Si, Mengwei, Ye, Peide, Weinstein, Dana

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