One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy von Sahoo, Prasana K., Memaran, Shahriar, Xin, Yan, Balicas, Luis, Gutiérrez, Humberto R.

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Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions von Memaran, Shahriar, Pradhan, Nihar R, Lu, Zhengguang, Rhodes, Daniel, Ludwig, Jonathan, Zhou, Qiong, Ogunsolu, Omotola, Ajayan, Pulickel M, Smirnov, Dmitry, Fernández-Domínguez, Antonio I, García-Vidal, Francisco J, Balicas, Luis

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Light sources with bias tunable spectrum based on van der Waals interface transistors von Henck, Hugo, Mauro, Diego, Domaretskiy, Daniil, Philippi, Marc, Memaran, Shahriar, Zheng, Wenkai, Lu, Zhengguang, Shcherbakov, Dmitry, Lau, Chun Ning, Smirnov, Dmitry, Balicas, Luis, Watanabe, Kenji, Taniguchi, Takashi, Fal’ko, Vladimir I., Gutiérrez-Lezama, Ignacio, Ubrig, Nicolas, Morpurgo, Alberto F.

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Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors von Pradhan, Nihar R., Garcia, Carlos, Isenberg, Bridget, Rhodes, Daniel, Feng, Simin, Memaran, Shahriar, Xin, Yan, McCreary, Amber, Walker, Angela R. Hight, Raeliarijaona, Aldo, Terrones, Humberto, Terrones, Mauricio, McGill, Stephen, Balicas, Luis

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Field-Effect Transistors Based on Few-Layered α‑MoTe2 von Pradhan, Nihar R, Rhodes, Daniel, Feng, Simin, Xin, Yan, Memaran, Shahriar, Moon, Byoung-Hee, Terrones, Humberto, Terrones, Mauricio, Balicas, Luis

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Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response von Sahoo, Prasana Kumar, Memaran, Shahriar, Nugera, Florence Ann, Xin, Yan, Díaz Márquez, Tania, Lu, Zhengguang, Zheng, Wenkai, Zhigadlo, Nikolai D, Smirnov, Dmitry, Balicas, Luis, Gutiérrez, Humberto Rodríguez

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Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells von Shcherbakov, Dmitry, Voigt, Greyson, Memaran, Shahriar, Liu, Gui-Bin, Wang, Qiyue, Watanabe, Kenji, Taniguchi, Takashi, Smirnov, Dmitry, Balicas, Luis, Zhang, Fan, Lau, Chun Ning

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Ambipolar Molybdenum Diselenide Field-Effect Transistors: Field-Effect and Hall Mobilities von Pradhan, Nihar R, Rhodes, Daniel, Xin, Yan, Memaran, Shahriar, Bhaskaran, Lakshmi, Siddiq, Muhandis, Hill, Stephen, Ajayan, Pulickel M, Balicas, Luis

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Thickness- and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide Heterostructures von Zheng, Wenkai, Xiang, Li, de Quesada, Felipe A., Augustin, Mathias, Lu, Zhengguang, Wilson, Matthew, Sood, Aditya, Wu, Fengcheng, Shcherbakov, Dmitry, Memaran, Shahriar, Baumbach, Ryan E., McCandless, Gregory T., Chan, Julia Y., Liu, Song, Edgar, James H., Lau, Chun Ning, Lui, Chun Hung, Santos, Elton J. G., Lindenberg, Aaron, Smirnov, Dmitry, Balicas, Luis

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Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor von Shcherbakov, Dmitry, Stepanov, Petr, Memaran, Shahriar, Wang, Yaxian, Xin, Yan, Yang, Jiawei, Wei, Kaya, Baumbach, Ryan, Zheng, Wenkai, Watanabe, Kenji, Taniguchi, Takashi, Bockrath, Marc, Smirnov, Dmitry, Siegrist, Theo, Windl, Wolfgang, Balicas, Luis, Lau, Chun Ning

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Field-Effect Transistors Based on Few-Layered α-MoTe 2 von Pradhan, Nihar R., Rhodes, Daniel, Feng, Simin, Xin, Yan, Memaran, Shahriar, Moon, Byoung-Hee, Terrones, Humberto, Terrones, Mauricio, Balicas, Luis

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Field-Effect Transistors Based on Few-Layered alpha -MoTe sub(2) von Pradhan, Nihar R, Rhodes, Daniel, Feng, Simin, Xin, Yan, Memaran, Shahriar, Moon, Byoung-Hee, Terrones, Humberto, Terrones, Mauricio, Balicas, Luis

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Phase Modulators Based on High Mobility Ambipolar ReSe 2 Field-Effect Transistors von Pradhan, Nihar R, Garcia, Carlos, Isenberg, Bridget, Rhodes, Daniel, Feng, Simin, Memaran, Shahriar, Xin, Yan, McCreary, Amber, Walker, Angela R Hight, Raeliarijaona, Aldo, Terrones, Humberto, Terrones, Mauricio, McGill, Stephen, Balicas, Luis

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Field-effect transistors based on few-layered α-MoTe(2) von Pradhan, Nihar R, Rhodes, Daniel, Feng, Simin, Xin, Yan, Memaran, Shahriar, Moon, Byoung-Hee, Terrones, Humberto, Terrones, Mauricio, Balicas, Luis

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Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells von Shcherbakov, Dmitry, Voigt, Greyson, Memaran, Shahriar, Liu, Gui-Bin, Wang, Qiyue, Watanabe, Kenji, Taniguchi, Takashi, Smirnov, Dmitry, Balicas, Luis, Zhang, Fan, Lau, Chun Ning

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Wear Compensating Confinement Ring von Jang, Siwon, Memaran, Shahriar, Mace, Adam Christopher, Charatan, Robert

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WEAR COMPENSATING CONFINEMENT RING von MEMARAN, Shahriar, JANG, Siwon, MACE, Adam, CHARATAN, Robert

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Light sources with bias tunable spectrum based on van der Waals interface transistors von Henck, Hugo, Mauro, Diego, Domaretskiy, Daniil, Philippi, Marc, Memaran, Shahriar, Zheng, Wenkai, Lu, Zhengguang, Shcherbakov, Dmitry, Chun Ning Lau, Smirnov, Dmitry, Balicas, Luis, Watanabe, Kenji, Fal'ko, Vladimir I, Gutiérrez-Lezama, Ignacio, Ubrig, Nicolas, Morpurgo, Alberto F

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Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures von Zheng, Wenkai, Li, Xiang, de Quesada, Felipe, Augustin, Mathias, Lu, Zhengguang, Wilson, Matthew, Sood, Aditya, Wu, Fengcheng, Shcherbakov, Dmitry, Memaran, Shahriar, Baumbach, Ryan E, McCandless, Gregory T, Chan, Julia Y, Liu, Song, Edgar, James, Chun Ning Lau, Lui, Chun Hung, Santos, Elton, Lindenberg, Aaron, Smirnov, Dmitry, Balicas, Luis

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Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells von Shcherbakov, Dmitry, Voigt, Greyson, Memaran, Shahriar, Gui-Bin Liu, Wang, Qiyue, Watanabe, Kenji, Taniguchi, Takashi, Smirnov, Dmitry, Balicas, Luis, Zhang, Fan, Chun Ning Lau

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