Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications von KOPF, R. F, HAMM, R. A, WANG, Y.-C, RYAN, R. W, TATE, A, MELENDES, M. A, PULLELA, R, CHEN, Y.-K, THEVIN, J

Volltext

High-power V-band AlInAs/GaInAs on InP HEMTs von Matloubian, M., Brown, A.S., Nguyen, L.D., Melendes, M.A., Larson, L.E., Delancey, M.J., Pence, J.E., Rhodes, R.A., Thompson, M.A., Henige, J.A.

Volltext

Impact of buffer layer design on the performance of AlInAs-GaInAs HEMTs von Mishra, U.K., Brown, A.S., Jelloian, L.M., Melendes, M.A., Thompson, M., Rosenbaum, S.E., Larson, L.E.

Volltext

AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE von Brown, A.S., Mishra, U.K., Chou, C.S., Hooper, C.E., Melendes, M.A., Thompson, M., Larson, L.E., Rosenbaum, S.E., Delaney, M.J.

Volltext

Thin-film resistor fabrication for InP technology applications von Kopf, R. F., Melendes, R., Jacobson, D. C., Tate, A., Melendes, M. A., Reyes, R. R., Hamm, R. A., Yang, Y., Frackoviak, J., Weimann, N. G., Maynard, H. L., Liu, C. T.

Volltext

Study of the dependence of Ga(0.47)In(0.53)As/Al (x) In(1-x)As power HEMT breakdown voltage on Schottky layer design and device layout von Brown, J J, Brown, A S, Rosenbaum, S E, Schmitz, A S, Matloubian, M, Larson, L E, Melendes, M A, Thompson, M A

Volltext

High-power < e1 > V < /e1 > -band AlInAs/GaInAs on InP HEMTs von Matloubian, M, Brown, A S, Nguyen, L D, Melendes, M A, Larson, L E, Delancey, M J, Pence, J E, Rhodes, R A, Thompson, M A, Henige, J A

Volltext

High power and high efficiency AlInAs/GaInAs on InP HEMTs von Matloubian, M., Nguyen, L.D., Brown, A.S., Larson, L.E., Melendes, M.A., Thompson, M.A.

Volltext

The integration of micro-machine fabrication with electronic device fabrication on III-V semiconductor materials von Hackett, R.H., Larson, L.E., Melendes, M.A.

Volltext bestellen

20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT von Matloubian, M., Brown, A.S., Nguyen, L.D., Melendes, M.A., Larson, L., Delaney, M., Thompson, M., Rhodes, R., Pence, J.

Volltext

90 GHz basedband lumped amplifier von Tsai, H.S., Kopf, R., Melendes, R., Melendes, M., Tate, A., Ryan, R., Hamm, R., Chen, Y.K.

Volltext

90 GHz basedband lumped amplifier von Tsai, H S, Kopf, R, Melendes, R, Melendes, M, Tate, A, Ryan, R, Hamm, R, Chen, Y K

Volltext

High performance SWIR HgCdTe detector arrays von Bubulac, L. O., Tennant, W. E., Pasko, J. G., Kozlowski, L. J., Zandian, M., Motamedi, M. E., De Wames, R. E., Bajaj, J., Nayar, N., McLevige, W. V., Gluck, N. S., Melendes, R., Cooper, D. E., Edwall, D. D., Arias, J. M., Hall, R., D’souza, A. I.

Volltext

Study of the dependence of Ga/sub 0.47/In/sub 0.53/As/Al/sub x/ In/sub 1-x/As power HEMT breakdown voltage on Schottky layer design and device layout von Brown, J.J., Brown, A.S., Rosenbaum, S.E., Schmitz, A.S., Matloubian, M., Larson, L.E., Melendes, M.A., Thompson, M.A.

Volltext

InP-based HEMTs with AlIn/sub 1-x/P Schottky barrier layers grown by gas-source MBE von Brown, J.J., Matloubian, M., Liu, T.K., Jelloian, L.M., Schmitz, A.E., Wilson, R.G., Lui, M., Larson, L.E., Melendes, M.A., Thompson, M.A.

Volltext bestellen

Vertical scaling of ultra-high-speed AlInAs-GaInAs HEMTs von Nguyen, L., Brown, A., Delaney, M., Mishra, U., Larson, L., Jelloian, L., Melendes, M., Hooper, C., Thompson, M.

Volltext

Perfectionnements apportés dans la construction des lits métalliques von MELENDES ANDRE

Volltext bestellen

Nouveau lit métallique repliable en quatre parties von MELENDES ANDRE

Volltext bestellen

Nouveau mode de montage des panneaux bois dans les lits métalliques von MELENDES ANDRE-FERNAND

Volltext bestellen

Perfectionnements apportés à la fabrication des lits métalliques von MELENDES ANDRE-FERNAND

Volltext bestellen