Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes von Magari, Yusaku, Aman, S. G. Mehadi, Koretomo, Daichi, Masuda, Kentaro, Shimpo, Kenta, Makino, Hisao, Kimura, Mutsumi, Furuta, Mamoru

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Low-temperature (150 degrees C) processed metal-semiconductor field-effect transistor with a hydrogenated In-Ga-Zn-O stacked channel von Magari, Yusaku, Aman, S. G. Mehadi, Koretomo, Daichi, Masuda, Kentaro, Shimpo, Kenta, Furura, Mamoru

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Heterojunction channel engineering to enhance performance and reliability of amorphous In-Ga-Zn-O thin-film transistors von Furuta, Mamoru, Koretomo, Daichi, Magari, Yusaku, Aman, S G Mehadi, Higashi, Ryunosuke, Hamada, Shuhei

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Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In-Ga-Zn-O Thin-Film Transistors von Aman, S. G. Mehadi, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru

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Hydrogenated In-Ga-Zn-O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices von Kono, Syuya, Magari, Yusaku, Mori, Marin, Aman, S. G. Mehadi, Fruehauf, Norbert, Furuta, Hiroshi, Furuta, Mamoru

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Correlation between passivation film density and reliability of In-Ga-Zn-O thin-film transistors von Aman, S. G. Mehadi, Furuta, Mamoru

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P‐12: Activation of IGZO Devices at 150°C via Reduction Process Using Hydrogen Gas During Sputtering von Magari, Yusaku, Mehadi Aman, S G, Sasaki, Daichi, Furuta, Mamoru

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Low-temperature (150 °C) activation of Ar+O2+H2-sputtered In-Ga-Zn-O for thin-film transistors von Aman, S. G. Mehadi, Magari, Yusaku, Shimpo, Kenta, Hirota, Yuya, Makino, Hisao, Koretomo, Daichi, Furuta, Mamoru

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Influence of Deposition Temperature and Source Gas in PE-CVD for SiO 2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors von Aman, S. G. Mehadi, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru

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Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–G–Zn–O Thin-Film Transistors von Mehadi Aman, S G, Koretomo, Daichi, Magari, Yusaku, Furuta, Mamoru

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Low-temperature (150 °C) activation of Ar+O 2 +H 2 -sputtered In–Ga–Zn–O for thin-film transistors von Aman, S. G. Mehadi, Magari, Yusaku, Shimpo, Kenta, Hirota, Yuya, Makino, Hisao, Koretomo, Daichi, Furuta, Mamoru

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Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al 2 O 3 gate insulator for flexible devices von Kono, Syuya, Magari, Yusaku, Mori, Marin, Aman, S. G. Mehadi, Fruehauf, Norbert, Furuta, Hiroshi, Furuta, Mamoru

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(Invited) Low-Temperature Activation Method for InGaZnO x Thin-Film Transistors von Furuta, Mamoru, Mehadi, Aman S G, Magari, Yusaku, Daichi, Koretomo

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