Rheological and mechanical properties of recycled poly(ethylene terephtalate)/high density polyethylene blends von Guessoum, M., Medjdoub, N., Nekkaa, S., Haddaoui, N.

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Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications von Said, N., Harrouche, K., Medjdoub, F., Labat, N., Tartarin, J.G., Malbert, N.

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Visualisation in energy eco-feedback systems: A systematic review of good practice von Chalal, M.L., Medjdoub, B., Bezai, N., Bull, R., Zune, M.

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First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz von Medjdoub, F., Zegaoui, M., Grimbert, B., Ducatteau, D., Rolland, N., Rolland, P. A.

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Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate von Medjdoub, F., Zegaoui, M., Rolland, N., Rolland, P. A.

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High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate von Medjdoub, F., Zegaoui, M., Ducatteau, D., Rolland, N., Rolland, P. A.

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Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate von Medjdoub, F., Waldhoff, N., Zegaoui, M., Grimbert, B., Rolland, N., Rolland, P. A.

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Barrier-Layer Scaling of InAlN/GaN HEMTs von Medjdoub, F., Alomari, M., Carlin, J.-F., Gonschorek, M., Feltin, E., Py, M.A., Grandjean, N., Kohn, E.

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Record Combination of Power-Gain Cut-Off Frequency and Three-Terminal Breakdown Voltage for GaN-on-Silicon Devices von Medjdoub, Farid, Grimbert, Bertrand, Ducatteau, Damien, Rolland, Nathalie

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Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements von Subramani, Nandha Kumar, Sahoo, Amit Kumar, Nallatamby, Jean-Christophe, Sommet, Raphael, Rolland, Nathalie, Medjdoub, Farid, Quere, Raymond

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Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors von Medjdoub, Farid, Zegaoui, Malek, Grimbert, Bertrand, Rolland, Nathalie, Rolland, Paul-Alain

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GaN-on-silicon high electron mobility transistors with blocking voltage of 3 kV von Herbecq, N, Roch-Jeune, I, Linge, A, Grimbert, B, Zegaoui, M, Medjdoub, F

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Aphid diversity in two food legume crops: fava bean and pea in Naciria region, and first record of Melanaphis sacchari (Zehntner, 1897) in Algeria von Bouabida, N., Benoufella-Kitous, K., Ait Amar, S., Medjdoub-Bensaad, F.

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Beyond 100 GHz AlN/GaN HEMTs on silicon substrate von MEDJDOUB, F, ZEGAOUI, M, ROLLAND, N

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Global transmission and reflection coefficients of the ultrasonic component in porous media: A new approach von Nassar, G., Medjdoub, A., Saad, N.

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InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess von Alomari, M., Medjdoub, F., Carlin, J.-F., Feltin, E., Grandjean, N., Chuvilin, A., Kaiser, U., Gaquiere, C., Kohn, E.

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Actualisation des analyses de risques : un outil dynamique von Varnewyck, Fabien, Medjdoub, Karima

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Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz von Medjdoub, F., Tagro, Y., Zegaoui, M., Grimbert, B., Danneville, F., Ducatteau, D., Rolland, N., Rolland, P. A.

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Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism von Sahoo, A.K., Subramani, N.K., Nallatamby, J.C., Sylvain, L., Loyez, C., Quere, R., Medjdoub, F.

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Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors von Medjdoub, Farid, Ducatteau, Damien, Zegaoui, Malek, Grimbert, Bertrand, Rolland, Nathalie, Rolland, Paul-Alain

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