Etch characteristics of GaN and BN materials in chlorine-based plasmas von MEDELCI, N, TEMPEZ, A, STARIKOV, D, BADI, N, BERISHEV, I, BENSAOULA, A

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Metal–insulator–semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications von Starikov, D., Badi, N., Berishev, I., Medelci, N., Kameli, O., Sayhi, M., Zomorrodian, V., Bensaoula, A.

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Selective area growth of GaN on Si(111) by chemical beam epitaxy von Kim, Esther, Tempez, A., Medelci, N., Berishev, I., Bensaoula, A.

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First epitaxial InP tunnel junctions grown by chemical beam epitaxy von Vilela, M.F., Medelci, N., Bensaoula, A., Freundlich, A., Renaud, P.

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Fabrication and characterization of 2.3eV InGaN photovoltaic devices von Misra, P., Boney, C., Medelci, N., Starikov, D., Freundlich, A., Bensaoula, A.

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Effect of Photo-Assisted RIE Damage on GaN von Mouffak, Z, Medelci-Djezzar, N, Boney, C, Bensaoula, A, Trombetta, L

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InP-based quantum well solar cells grown by chemical beam epitaxy von Freundlich, A., Rossignol, V., Vilela, M.F., Renaud, P., Bensacula, A., Medelci, N.

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Integrated multi-wavelength fluorescence sensors von Starikov, D., Benkabou, F., Medelci, N., Bensaoula, A.

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Modeling p-i(multi quantum well)-n solar cells: a contribution for a near optimum design von Renaud, P., Vilela, M.F., Freundlich, A., Bensaoula, A., Medelci, N.

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Very high peak current CBE grown InGaAs tunnel junction for InP/InGaAs tandem cells fabricated on InP, GaAs, and Si substrates von Freundlich, A., Vilela, M.F., Bensaoula, A., Medelci, N.

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Photoenhanced reactive ion etching of III–V nitrides in BCl3/Cl2/Ar/N2 plasmas von Tempez, A., Medelci, N., Badi, N., Berishev, I., Starikov, D., Bensaoula, A.

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Diode structures based on p -GaN for optoelectronic applications in the near-ultraviolet range of the spectrum von Starikov, D., Berishev, I., Um, J.-W., Badi, N., Medelci, N., Tempez, A., Bensaoula, A.

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Experimental simulation of integrated optoelectronic sensors based on III nitrides von Starikov, D., Boney, C., Medelci, N., Um, J.-W., Bensaoula, A., Sanz, M. Larios, Fox, G. E.

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Photoenhanced reactive ion etching of III–V nitrides in BCl 3 /Cl 2 /Ar/N 2 plasmas von Tempez, A., Medelci, N., Badi, N., Berishev, I., Starikov, D., Bensaoula, A.

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Effect of photo-assisted RIE damage in GaN Schottky structures von Mouffak, Z., Medelci-Djezzar, N., Trombetta, L.

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Compact fluorescence sensors based on III nitrides von Starikov, D., Benkabou, F., Medelci, N., Bensaoula, A.

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First time demonstration of InP p/sup ++//n/sup ++/ tunnel junction von Vilela, M.F., Medelci, N., Bensaoula, A., Freundlich, A., Renaud, P.

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High performance In/sub 0.47/Ga/sub 0.53/As tunnel junctions grown by chemical beam epitaxy on InP and GaAs and Si substrates von Vilela, M.F., Freundlich, A., Bensaoula, A., Medelci, N.

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Chemical beam epitaxy for high efficiency photovoltaic devices von Bensaoula, A., Freundlich, A., Vilela, M. F., Medelci, N., Renaud, P.

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Calculation of near optimum design of InP/In(0.53)Ga(0.47)As monolithic tandem solar cells von Renaud, P., Vilela, M. F., Freundlich, A., Medelci, N., Bensaoula, A.

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