Midgap density of states in hydrogenated polymorphous silicon von Meaudre, M., Meaudre, R., Butté, R., Vignoli, S., Longeaud, C., Kleider, J. P., Roca i Cabarrocas, P.

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Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors von Meaudre, R., Meaudre, M.

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Determination of the capture cross sections of electrons in undoped hydrogenated amorphous silicon from the photoconductivity of and space-charge relaxation in n+-i-n+ structures;... von Meaudre, M, Meaudre, R

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Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements von Kleider, J. P., Longeaud, C., Gauthier, M., Meaudre, M., Meaudre, R., Butté, R., Vignoli, S., Roca i Cabarrocas, P.

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Links between hydrogen bonding, residual stress, structural properties and metastability in hydrogenated nanostructured silicon thin films von Vignoli, S, Butté, R, Meaudre, R, Meaudre, M, Brenier, R

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Properties of a new a-Si:H-like material: hydrogenated polymorphous silicon von Longeaud, C, Kleider, J.P, Roca i Cabarrocas, P, Hamma, S, Meaudre, R, Meaudre, M

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Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150°C von Butté, R, Vignoli, S, Meaudre, M, Meaudre, R, Marty, O, Saviot, L, Roca i Cabarrocas, P

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Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon von Vignoli, S, Fontcuberta i Morral, A, Butté, R, Meaudre, R, Meaudre, M

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Deep defects and their electron-capture cross sections in polymorphous silicon-germanium thin films von Meaudre, M., Gueunier-Farret, M. E., Meaudre, R., Kleider, J. P., Vignoli, S., Canut, B.

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Device quality a-Si:H deposited from electron cyclotron resonance at very high deposition rates von Gueunier-Farret, M.E., Bazin, C., Kleider, J.P., Longeaud, C., Bulkin, P., Daineka, D., Dao, T.H., Roca i Cabarrocas, P., Descamps, P., Kervyn de Meerendre, T., Leempoel, P., Meaudre, M., Meaudre, R.

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Density of states in hydrogenated microcrystalline silicon determined by space charge limited currents von Meaudre, M, Meaudre, R, Vignoli, S, Marty, O

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Thermoelectric power in undoped hydrogenated polymorphous silicon von Meaudre, R., Meaudre, M., Butté, R., Vignoli, S.

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A simple model to describe AC electronic charge transport in hydrogenated microcrystalline silicon von Meaudre, R., Meaudre, M., Vignoli, S.

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Evolution with light-soaking of polymorphous material prepared at 423 K von Roy, D, Longeaud, C, Saadane, O, Gueunier, M.E, Vignoli, S, Butté, R, Meaudre, R, Meaudre, M

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Structural properties depicted by optical measurements in hydrogenated polymorphous silicon von Vignoli, S, Butté, R, Meaudre, R, Meaudre, M, Cabarrocas, P Roca i

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Structural properties and recombination processes in hydrogenated polymorphous silicon von Meaudre, R., Butté, R., Vignoli, S., Meaudre, M., Saviot, L., Marty, O., P. Roca i Cabarrocas

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Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation von Meaudre, R., Meaudre, M., Butte, R., Vignoli, S.

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Thermal annealing of light-induced defects in p - i - p and n - i - n hydrogenated amorphous silicon structures: Influence of hole and electron injection von Meaudre, M., Meaudre, R., Vignoli, S.

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Some electronic and metastability properties of a new nanostructured material: Hydrogenated polymorphous silicon von Butté, R., Meaudre, R., Meaudre, M., Vignoli, S., Longeaud, C., Kleider, J. P., Cabarrocas, P. Roca i

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Electronic properties of Erbium doped amorphous silicon von Kleider, J.P., Longeaud, C., Meaudre, R., Meaudre, M., Vignoli, S., Koughia, K.V., Terukov, E.I., Konkov, O.I.

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