A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe ir detectors and focal plane arrays von TENNANT, W. E, THOMAS, M, MUZILLA, M, STOLTZ, A, DINAN, J. H, KOZLOWSKI, L. J, MCLEVIGE, W. V, EDWALL, D. D, ZANDIAN, M, SPARIOSU, K, HILDEBRANDT, G, GIL, V, ELY, P

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Microscopic defects on MBE grown LWIR Hg1−xCdxTe material and their impact on device performance von Wijewarnasuriya, P. S., Zandian, M., Young, D. B., Waldrop, J., Edwall, D. D., Mclevige, W. V., Lee, D., Arias, J., D’Souza, A. I.

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Large VLWIR Hg1−xCdxTe photovoltaic detectors von D’Souza, A. I., Dawson, L. C., Staller, C., Wijewarnasuriya, P. S., Dewames, R. E., Mclevige, W. V., Arias, J. M., Edwall, D., Hildebrandt, G.

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Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing von Edwall, D. D., DeWames, R. E., McLevige, W. V., Pasko, J. G., Arias, J. M.

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Variable-area diode data analysis of surface and bulk effects in MWIR HgCdTe/CdTe/sapphire photodetectors von McLevige, W V, Williams, G M, DeWames, R E, Bajaj, J, Gergis, I S, Vanderwyck, A H, Blazejewski, E R

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GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate von Shichijo, H., Lee, J.W., McLevige, W.V., Taddiken, A.H.

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MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates von Wijewarnsuriya, P. S., Zandian, M., Edwall, D. D., McLevige, W. V., Chen, C. A., Pasko, J. G., Hildebrandt, G., Chen, A. C., Arias, J. M., D’Souza, A. I., Rujirawat, S., Sivananthan, S.

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Microwave switching with parallel-resonated GaAs FETS von McLevige, W.V., Sokolov, V.

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VSWIR to VLWIR MBE grown HgCdTe material and detectors for remote sensing applications von D’souza, A. I., Dawson, L. C., Anderson, E. J., Markum, A. D., Tennant, W. E., Bubulac, L. O., Zandian, M., Pasko, J. G., McLevige, W. V., Edwall, D. D., Derr, J. W., Jandik, J. E.

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Electrical profiling and optical activation studies of Be-implanted GaAs von McLevige, W. V., Helix, M. J., Vaidyanathan, K. V., Streetman, B. G.

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High performance SWIR HgCdTe detector arrays von Bubulac, L. O., Tennant, W. E., Pasko, J. G., Kozlowski, L. J., Zandian, M., Motamedi, M. E., De Wames, R. E., Bajaj, J., Nayar, N., McLevige, W. V., Gluck, N. S., Melendes, R., Cooper, D. E., Edwall, D. D., Arias, J. M., Hall, R., D’souza, A. I.

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Characterization of CdTe for HgCdTe surface passivation von BUBULAC, L. O, TENNANT, W. E, BAJAJ, J, SHENG, J, BRIGHAM, R, VANDERWYCK, A. H. B, ZANDIAN, M, MCLEVIGE, W. V

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Annealing studies of Be-doped GaAs grown by molecular beam epitaxy von McLevige, W. V., Vaidyanathan, K. V., Streetman, B. G., Ilegems, M., Comas, J., Plew, L.

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GaAs/AlGaAs heterojunction bipolar transistors for integrated circuit applications von McLevige, W.V., Yuan, H.T., Duncan, W.M., Frensley, W.R., Doerbeck, F.H., Morkoc, H., Drummond, T.J.

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Diffusion studies of Be-implanted GaAs by SIMS and electrical profiling von McLevige, W.V., Vaidyanathan, K.V., Streetman, B.G., Comas, J., Plew, L.

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Infrared detector assemblies for the tropospheric emission spectrometer von Bruce, C.F., Bajaj, J., Lee, D., Pepper, T.A., Chu, G., McLevige, W.V., Edwall, D.D., McGregor, L.A., Weissbard, W., Hildebrandt, G., Blackwell, J.D., Bhargava, S., Gil, V., Cooper, D.E., Spariosu, K., Arias, J.M., Tennant, W.E., Vural, K., Shin, L.

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Photoluminescence from Be-implanted GaAs von Chatterjee, Pallab K., Vaidyanathan, K. V., McLevige, W. V., Streetman, B. G.

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Temperature dependence of photoluminescence from Be-implanted GaAs von Chatterjee, Pallab K., McLevige, W. V., Vaidyanathan, K. V., Streetman, B. G.

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New Waveguide Structures for Millimeter-Wave and Optical Integrated Circuits von McLevige, W.V., Itoh, T., Mittra, R.

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Versatile double AC Hall effect system for profiling impurities in semiconductors von McLevige, W V, Chatterjee, P K, Streetman, B G

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