Direct detection of carrier traps in Si solar cells after light-induced degradation von Mchedlidze, Teimuraz, Weber, Jörg

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Evolution of iron-containing defects during processing of Si solar cells von Mchedlidze, Teimuraz, Möller, Christian, Lauer, Kevin, Weber, Jörg

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Characterization of Ultrathin Fully Depleted Silicon‐on‐Insulator Devices Using Subthreshold Slope Method von Mchedlidze, Teimuraz, Erben, Elke

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Location and Properties of Carrier Traps in mc‐Si Solar Cells Subjected to Degradation at Elevated Temperatures von Mchedlidze, Teimuraz, Weber, Joerg

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Characterization of Ultrathin FDSOI Stacks Using Low‐Field Mobility von Mchedlidze, Teimuraz, Schmid, Alexander, Heitmann, Johannes

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Gettering and Defect Engineering in Semiconductor Technology (GADEST 2024) von Heitmann, Johannes, Beyer, Franziska, Hiller, Daniel, Mchedlidze, Teimuraz, Müller, Matthias

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Iron-related carrier traps near the n + p-junctions of crystalline silicon solar cells: impacts of feedstock and of the fabrication processes: Iron-related carrier traps near n + p... von Mchedlidze, Teimuraz, Weber, Jörg

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Iron-related carrier traps near the n super(+)p-junctions of crystalline silicon solar cells: impacts of feedstock and of the fabrication processes von Mchedlidze, Teimuraz, Weber, Jorg

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In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence von Mchedlidze, Teimuraz, Alam, Md Mahabubul, Herguth, Axel, Weber, Joerg

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In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence von Mchedlidze, Teimuraz, Alam, Md Mahabubul, Herguth, Axel, Weber, Joerg

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Monitoring of Si-solar cell degradation with electroluminescence von Mchedlidze, Teimuraz, Herguth, Axel, Weber, Jörg

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Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers von Kononchuk, Oleg, Mchedlidze, Teimuraz, Kittler, Martin, Trushin, Maxim, Vyvenko, O.F.

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Interface traps in 28nm node field effect transistors detected by capacitance transient spectroscopy von Mchedlidze, Teimuraz, Drescher, Maximilian, Erben, Elke, Weber, Jörg

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Interface traps in 28 nm node field effect transistors detected by capacitance transient spectroscopy von Mchedlidze, Teimuraz, Drescher, Maximilian, Erben, Elke, Weber, Jörg

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Deep carrier traps in as grown isotopically pure 28 Si FZ crystal von Mchedlidze, Teimuraz, Weber, Jörg, Abrosimov, Nikolay V., Riemann, Helge

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Iron-related carrier traps near the n+p-junctions of crystalline silicon solar cells: impacts of feedstock and of the fabrication processes von Mchedlidze, Teimuraz, Weber, Jörg

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Properties of an Iron–Vacancy Pair in Silicon von Mchedlidze, Teimuraz, Suezawa, Masashi

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Deep carrier traps in as grown isotopically pure 28Si FZ crystal von Mchedlidze, Teimuraz, Weber, Jörg, Abrosimov, Nikolay V., Riemann, Helge

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Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock von Mchedlidze, Teimuraz, Weber, Jörg

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Light induced crystallization of an amorphous silicon film embedded between silicon oxide layers: Light-induced crystallization of an a-Si film between SiO 2 layers von Schade, Martin, Mchedlidze, Teimuraz, Kittler, Martin, Leipner, Hartmut S.

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