Modeling the anneal of radiation-induced trapped holes in a varying thermal environment von McWhorter, P.J., Miller, S.L., Miller, W.M.

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Physics of the ferroelectric nonvolatile memory field effect transistor von MILLER, S. L, MCWHORTER, P. J

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Factors differentiating the commercialization of disruptive and sustaining technologies von Kassicieh, S.K., Walsh, S.T., Cummings, J.C., McWhorter, P.J., Romig, A.D., Williams, W.D.

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Electron paramagnetic resonance investigation of charge trapping centers in amorphous silicon nitride films von WARREN, W. L, KANICKI, J, ROBERTSON, J, POINDEXTER, E. H, MCWHORTER, P. J

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New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors) von Fleetwood, D.M., Miller, S.L., Reber, R.A., McWhorter, P.J., Winokur, P.S., Shaneyfelt, M.R., Schwank, J.R.

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Radiation response of floating gate EEPROM memory cells von Snyder, E.S., McWhorter, P.J., Dellin, T.A., Sweetman, J.D.

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Implications of intelligent, integrated microsystems for product design and development von Myers, D.R., McWhorter, P.J., Converse, C., Makal, L.

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Correlating the Radiation Response of MOS Capacitors and Transistors von Winokur, P. S., Schwank, J. R., McWhorter, P. J., Dressendorfer, P. V., Turpin, D. C.

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Modeling the memory retention characteristics of silicon-nitride-oxide-silicon nonvolatile transistors in a varying thermal environment von McWhorter, P. J., Miller, S. L., Dellin, T. A.

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Determining the energy distribution of traps in insulating thin films using the thermally stimulated current technique von MILLER, S. L, FLEETWOOD, D. M, MCWHORTER, P. J

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Physical Mechanisms Contributing to Device "Rebound" von Schwank, J. R., Winokur, P. S., McWhorter, P. J., Sexton, F. W., Dressendorfer, P. V., Turpin, D. C.

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Extremal dynamics: A unifying physical explanation of fractals, 1/[ital f] noise, and activated processes von Miller, S.L., Miller, W.M., McWhorter, P.J.

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Charge trapping centers in N-rich silicon nitride thin films von WARREN, W. L, KANICKI, J, RONG, F. C, POINDEXTER, E. H, MCWHORTER, P. J

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Calibration of an integrated hydrogen gas-sensing system von Hughes, K.L, Miller, S.L, Rodriguez, J.L, McWhorter, P.J

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A predictive model of electron and hole decay in silicon-nitride-oxide-silicon nonvolatile memory transistors experiencing arbitrary thermal environments von MILLER, S. L, MCWORTHER, P. J

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Identification of paramagnetic Pb[sup +3] defects in lead zirconate titanate ceramics von Warren, W.L., Tuttle, B.A., McWhorter, P.J., Rong, F.C., Poindexter, E.H.

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A practical predictive formalism to describe generalized activated physical processes von MILLER, S. L, MCWHORTER, P. J, MILLER, W. M, DESSENDORFER, P. V

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Donor/acceptor nature of radiation-induced interface traps von McWhorter, P.J., Winokur, P.S., Pastorek, R.A.

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Effect of temperature on data retention of silicon-oxide-nitride-oxide-semiconductor nonvolatile memory transistors von MILLER, S. L, MCWHORTER, P. J, DELLIN, T. A, ZIMMERMAN, G. T

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Comparison of MOS capacitor and transistor postirradiation response von McWhorter, P.J., Fleetwood, D.M., Pastorek, R.A., Zimmerman, G.T.

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