Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density von Kuzum, D., Krishnamohan, T., Pethe, A.J., Okyay, A.K., Oshima, Y., Yun Sun, McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C.

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Profile simulation of conformality of chemical vapor deposited copper in subquarter-micron trench and via structures von Burke, Aaron, Braeckelmann, Gregory, Manger, Dirk, Eisenbraun, Eric, Kaloyeros, Alain E., McVittie, Jim P., Han, Joseph, Bang, David, Loan, James F., Sullivan, John J.

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An Integrated Phase Change Memory Cell With Ge Nanowire Diode For Cross-Point Memory von Yuan Zhang, SangBum Kim, McVittie, J.P., Jagannathan, H., Ratchford, J.B., Chidsey, C.E.D., Nishi, Y., Wong, H.-S.P.

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Interface-Engineered Ge (100) and (111), N- and P-FETs with High Mobility von Kuzum, Duygu, Pethe, Abhijit J., Krishnamohan, Tejas, Oshima, Yasuhiro, Sun, Yun, McVittie, Jim P., Pianetta, Piero A., McIntyre, Paul C., Saraswat, Krishna C.

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Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices von ZHENG WANG, GRIFFIN, Peter B, MCVITTIE, Jim, WONG, Simon, MCINTYRE, Paul C, NISHI, Yoshio

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Passivation Studies of Germanium Surfaces von Kim, Jung Yup, Saraswat, Krishna, Nishi, Yoshio, McVittie, Jim

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Overview-Combination Vaccines and Simultaneous Administration: Past, Present, and Future von GOLDENTHAL, KAREN L., BURNS, DRUSILLA L., McVITTIE, LORIS D., LEWIS JR, BENJAMIN P., WILLIAMS, JIM C.

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