Of Microscopes and Meeting Places: A Literature Review Examining Barriers to Indigenous Participation in STEM von Bollinger, Madeline, McSkimming, Brian M.

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Fixed charge in high- k /GaN metal-oxide-semiconductor capacitor structures von Son, Junwoo, Chobpattana, Varistha, McSkimming, Brian M., Stemmer, Susanne

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Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy von Okumura, Hironori, McSkimming, Brian M., Huault, Thomas, Chaix, Catherine, Speck, James S.

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High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy von McSkimming, Brian M., Chaix, Catherine, Speck, James S.

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Nucleation and growth of metamorphic epitaxial aluminum on silicon (111) 7 × 7 and surfaces von Alexander, Ashish, McSkimming, Brian M., Arey, Bruce, Arslan, Ilke, Richardson, Christopher J.K.

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Plasma assisted molecular beam epitaxy of GaN with growth rates > 2.6 μm/h von MCSKIMMING, Brian M, WU, F, HUAULT, Thomas, CHAIX, Catherine, SPECK, James S

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In-situ nitrogen plasma passivation of Al2O3/GaN interface states von Son, Junwoo, Chobpattana, Varistha, McSkimming, Brian M., Stemmer, Susanne

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Metamorphic growth of relaxed single crystalline aluminum on silicon (111) von McSkimming, Brian M., Alexander, Ashish, Samuels, Margaret H., Arey, Bruce, Arslan, Ilke, Richardson, Christopher J. K.

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Nucleation and growth of metamorphic epitaxial aluminum on silicon (111) 7 × 7 and 3×3 surfaces von Alexander, Ashish, McSkimming, Brian M., Arey, Bruce, Arslan, Ilke, Richardson, Christopher J. K.

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Nucleation and growth of metamorphic epitaxial aluminum on silicon (111) 7 × 7 and $\sqrt 3 \times \sqrt 3$ surfaces von Alexander, Ashish, McSkimming, Brian M., Arey, Bruce, Arslan, Ilke, Richardson, Christopher J.K.

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Interactive Homework: A Tool for Parent Engagement von Moore, Laura, Ronau, Robert N.

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p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents von Hurni, Christophe A., Bierwagen, Oliver, Lang, Jordan R., McSkimming, Brian M., Gallinat, Chad S., Young, Erin C., Browne, David A., Mishra, Umesh K., Speck, James S.

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Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6µm/h von McSkimming, Brian M., Wu, F., Huault, Thomas, Chaix, Catherine, Speck, James S.

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Plasma assisted molecular beam epitaxy of GaN with growth rates > 2.6 [mu]m/h von McSkimming, Brian M, Wu, F, Huault, Thomas, Chaix, Catherine, Speck, James S

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Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h von McSkimming, Brian M., Wu, F., Huault, Thomas, Chaix, Catherine, Speck, James S.

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p-n junctions on Ga-face GaN grown by NH 3 molecular beam epitaxywith low ideality factors and low reverse currents von Hurni, Christophe A., Bierwagen, Oliver, Lang, Jordan R., McSkimming, Brian M., Gallinat, Chad S., Young, Erin C., Browne, David A., Mishra, Umesh K., Speck, James S.

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Understanding and Controlling the Emission Brightness and Color of Molecular Cerium Luminophores von Qiao, Yusen, Sergentu, Dumitru-Claudiu, Yin, Haolin, Zabula, Alexander V, Cheisson, Thibault, McSkimming, Alex, Manor, Brian C, Carroll, Patrick J, Anna, Jessica M, Autschbach, Jochen, Schelter, Eric J

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Terminal Hydride Complex of High-Spin Mn von Drena, Alex, Fraker, Addison, Thompson, Niklas B., Doan, Peter E., Hoffman, Brian M., McSkimming, Alex

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Correction to “Terminal Hydride Complex of High-Spin Mn” von Drena, Alex, Fraker, Addison, Thompson, Niklas B., Doan, Peter E., Hoffman, Brian M., McSkimming, Alex

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Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies von Jackson, Christine M., Arehart, Aaron R., Cinkilic, Emre, McSkimming, Brian, Speck, James S., Ringel, Steven A.

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