Reduced dislocation density in GaxIn1−xP compositionally graded buffer layers through engineered glide plane switch von Schulte, K.L., France, R.M., McMahon, W.E., Norman, A.G., Guthrey, H.L., Geisz, J.F.

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An RDS, LEED, and STM Study of MOCVD-Prepared Si(1 0 0) surfaces von Hannappel, T., McMahon, W.E., Olson, J.M.

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An STM and LEED study of MOCVD-prepared P/Ge (1 0 0) to (1 1 1) surfaces von McMahon, W.E., Kibbler, A.E., Olson, J.M.

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A comparison of theoretical efficiencies of multi-junction concentrator solar cells von Kurtz, Sarah, Myers, Daryl, McMahon, W. E., Geisz, John, Steiner, Myles

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Growth of GaAs on single-crystal layered-2D Bi2Se3 von McMahon, W.E., Melamed, C.L., Tamboli, A.E., Toberer, E.S., Norman, A.G.

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Evaluation of NF3 versus dimethylhydrazine as n sources for GaAsN von KURTZ, Sarah, REEDY, R, KEYES, B, BARBER, Greg D, GEISZ, J. F, FRIEDMAN, D. J, MCMAHON, W. E, OLSON, J. M

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Direct transitions, indirect transitions, and surface photoemission in the prototypical system Ag(111) von Miller, T., Hansen, E.D., McMahon, W.E., Chiang, T.-C.

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Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials von Zhang, Lixin, McMahon, W.E., Liu, Y., Cai, Y., Xie, M.H., Wang, N., Zhang, S.B.

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Effects of substrate orientation on aluminum grown on MgAl 2O 4 spinel using molecular beam epitaxy von Lin, Y., Norman, A.G., McMahon, W.E., Moutinho, H.R., Jiang, C.-S., Ptak, A.J.

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Effects of substrate orientation on aluminum grown on MgAl2O4 spinel using molecular beam epitaxy von LIN, Y, NORMAN, A. G, MCMAHON, W. E, MOUTINHO, H. R, JIANG, C.-S, PTAK, Aj

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Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(1 0 0) surfaces von Bork, T., McMahon, W.E., Olson, J.M., Hannappel, T.

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Interference between Bulk and Surface Photoemission Transitions in Ag(111) von Miller, T, McMahon, WE, Chiang, T

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Effect of Sb on the Properties of GaInP Top Cells von Olson, J.M., McMahon, W.E., Kurtz, S.

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Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors von Kurtz, Sarah, Reedy, R., Barber, Greg D., Geisz, J.F., Friedman, D.J., McMahon, W.E., Olson, J.M.

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A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces von McMahon, W.E., Olson, J.M.

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Inverted GaInP / (In)GaAs / InGaAs triple-junction solar cells with low-stress metamorphic bottom junctions von Geisz, J.F., Kurtz, Sarah R., Wanlass, M.W., Ward, J.S., Duda, A., Friedman, D.J., Olson, J.M., McMahon, W.E., Moriarty, T.E., Kiehl, J.T., Romero, M.J., Norman, A.G., Jones, K.M.

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Evaluation of NF 3 versus dimethylhydrazine as N sources for GaAsN von Kurtz, Sarah, Reedy, R., Keyes, B., Barber, Greg D., Geisz, J.F., Friedman, D.J., McMahon, W.E., Olson, J.M.

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Scanning tunneling microscopy study of a Ag monolayer on Cu(111) von McMahon, W.E., Hirschorn, E.S., Chiang, T.-C.

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Scanning tunneling microscopy study of a Ag monolayer on Cu(111) von McMahon, W.E., Hirschorn, E.S., Chiang, T.-C.

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An on-sun comparison of GaInP/sub 2//GaAs tandem cells with top cell thickness varied von McMahon, W.E., Emery, K.E., Friedman, D.J., Ottoson, L., Young, M.S., Ward, U.S., Kramer, C.M., Duda, A., Kurtz, S.

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