A comparison of theoretical efficiencies of multi-junction concentrator solar cells von Kurtz, Sarah, Myers, Daryl, McMahon, W. E., Geisz, John, Steiner, Myles

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Control of misfit dislocation glide plane distribution during strain relaxation of CuPt-ordered GaInAs and GaInP von France, R. M., McMahon, W. E., Norman, A. G., Geisz, J. F., Romero, M. J.

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Fill factor as a probe of current-matching for GaInP2/GaAs tandem cells in a concentrator system during outdoor operation von McMahon, W. E., Emery, K. E., Friedman, D. J., Ottoson, L., Young, M. S., Ward, J. S., Kramer, C. M., Duda, A., Kurtz, Sarah

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Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials von Zhang, Lixin, McMahon, W.E., Liu, Y., Cai, Y., Xie, M.H., Wang, N., Zhang, S.B.

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Metal Pillar Interconnection Topology for Bonded Two-Terminal Multijunction III-V Solar Cells von McMahon, W. E., Lin, C.-T, Ward, J. S., Geisz, J. F., Wanlass, M. W., Carapella, J. J., Olavarría, W., Young, M., Steiner, M. A., France, R. M., Kibbler, A. E., Duda, A., Olson, J. M., Perl, E. E., Friedman, D. J., Bowers, J. E.

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Critical thickness of atomically ordered III-V alloys von France, R. M., McMahon, W. E., Guthrey, H. L.

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Step structures on III-V phosphide (001) surfaces : How do steps and Sb affect CuPt ordering of GaInP2? von BATYREV, Iskander G, MCMAHON, W. E, ZHANG, S. B, OLSON, J. M, WEI, Su-Huai

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Polymerization of defect states at dislocation cores in InAs von Park, Ji-Sang, Kang, Joongoo, Yang, Ji-Hui, McMahon, W. E., Wei, Su-Huai

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Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(1 0 0) surfaces von Bork, T., McMahon, W.E., Olson, J.M., Hannappel, T.

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An RDS, LEED, and STM Study of MOCVD-Prepared Si(1 0 0) surfaces von Hannappel, T., McMahon, W.E., Olson, J.M.

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Growth of GaAs on single-crystal layered-2D Bi2Se3 von McMahon, W.E., Melamed, C.L., Tamboli, A.E., Toberer, E.S., Norman, A.G.

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An STM and LEED study of MOCVD-prepared P/Ge (1 0 0) to (1 1 1) surfaces von McMahon, W.E., Kibbler, A.E., Olson, J.M.

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The influence of atomic ordering on strain relaxation during the growth of metamorphic solar cells von Norman, A G, France, R M, McMahon, W E, Geisz, J F, Romero, M J

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Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors von Kurtz, Sarah, Reedy, R., Barber, Greg D., Geisz, J.F., Friedman, D.J., McMahon, W.E., Olson, J.M.

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Evaluation of NF3 versus dimethylhydrazine as n sources for GaAsN von KURTZ, Sarah, REEDY, R, KEYES, B, BARBER, Greg D, GEISZ, J. F, FRIEDMAN, D. J, MCMAHON, W. E, OLSON, J. M

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A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces von McMahon, W.E., Olson, J.M.

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Strain-driven mesoscopic reconstruction of the As/Ge(111) surface von McMahon, W E, Batyrev, Iskander G, Olson, J M, Zhang, S B

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Effects of substrate orientation on aluminum grown on MgAl2O4 spinel using molecular beam epitaxy von LIN, Y, NORMAN, A. G, MCMAHON, W. E, MOUTINHO, H. R, JIANG, C.-S, PTAK, Aj

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Steps on As-terminated Ge(001) revisited: theory versus experiment von Zhang, S B, McMahon, W E, Olson, J M, Wei, S H

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Tip size effect on the appearance of a STM image for complex surfaces: Theory versus experiment for Si(111)-(7×7) von WANG, Y. L, GAO, H.-J, GUO, H. M, LIU, H. W, BATYREV, I. G, MCMAHOO, W. E, ZHANG, S. B

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