Electrical Measurement of Cell-to-Cell Variation of Critical Charge in SRAM and Sensitivity to Single-Event Upsets by Low-Energy Protons von Cannon, James M., Loveless, T. Daniel, Estrada, Rafael, Boggs, Ryan, Lawrence, S. P., Santos, Gabriel, McCurdy, Michael W., Sternberg, Andrew L., Reising, Donald R., Finzell, Thomas, Cannon, Ann

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In Situ Measurement of 1.8-MeV Proton Radiation Effects on Comb-Drive MEMS Resonators von Lee, Jaesung, McCurdy, Michael W., Reed, Robert A., Schrimpf, Ronald D., Alles, Michael A., Feng, Philip X.-L.

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Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs von Jin Chen, Puzyrev, Yevgeniy S., Rong Jiang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Arehart, Aaron R., Ringel, Steven A., Saunier, Paul, Lee, Cathy

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Evaluation of the Single-Event-Upset Vulnerability for Low-Energy Protons at the 7- and 5-nm Bulk FinFET Nodes von Xiong, Yoni, Pieper, Nicholas J., McCurdy, Michael W., Ball, Dennis R., Sierwaski, Brian D., Bhuva, Bharat L.

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LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices von Sengupta, Arijit, Ball, Dennis R., Sternberg, Andrew L., Islam, Sajal, Senarath, Aditha S., Reed, Robert A., McCurdy, Michael W., Zhang, En Xia, Hutson, John M., Alles, Michael L., Osheroff, Jason M., Jacob, Biju, Hitchcock, Collin W., Goswami, Shubhodeep, Schrimpf, Ronald D., Galloway, Kenneth F., Witulski, Arthur F.

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Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications von Ives, Nathan E., Jin Chen, Witulski, Arthur F., Schrimpf, Ronald D., Fleetwood, Daniel M., Bruce, Ralph W., McCurdy, Michael W., En Xia Zhang, Massengill, Lloyd W.

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Damage Separation in Proton-Irradiated Bipolar Junction Transistors as a Function of Energy von Witczak, Steven C., Schrimpf, Ronald D., Fleetwood, Daniel M., Messenger, Scott R., Langlois, Michael S., McCurdy, Michael W., Rodriguez, John A.

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Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes von Sengupta, Arijit, Ball, Dennis R., Witulski, Arthur F., Zhang, En Xia, Schrimpf, Ronald D., Galloway, Kenneth F., Reed, Robert A., Alles, Michael L., McCurdy, Michael W., Sternberg, Andrew L., Johnson III, Robert A., Howell, Mick E., Osheroff, Jason M., Hutson, John M.

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Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs von Jin Chen, Puzyrev, Yevgeniy S., Cher Xuan Zhang, En Xia Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S.

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Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs von Rong Jiang, En Xia Zhang, McCurdy, Michael W., Jin Chen, Xiao Shen, Pan Wang, Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S., Pantelides, Sokrates T.

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1/ f Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations von Pan Wang, Rong Jiang, Jin Chen, En Xia Zhang, McCurdy, Michael W., Schrimpf, Ronald D., Fleetwood, Daniel M.

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The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture von Brewer, Rachel M., Reed, Robert A., Moran, Steven L., Cox, Jonathan, Sierawski, Brian D., McCurdy, Michael W., Zhang, En Xia, Iyer, Subramanian S., Schrimpf, Ronald D., Alles, Michael L.

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Poly(glycidol) Coating on Ultrahigh Molecular Weight Polyethylene for Reduced Biofilm Growth von Lockhart, Jacob N, Spoonmore, Thomas J, McCurdy, Michael W, Rogers, Bridget R, Guelcher, Scott A, Harth, Eva

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Probing heavy ion radiation effects in silicon carbide (SiC) via 3D integrated multimode vibrating diaphragms von Chen, Hailong, Jia, Hao, Liao, Wenjun, Pashaei, Vida, Arutt, Charles N., McCurdy, Michael W., Zorman, Christian A., Reed, Robert A., Schrimpf, Ronald D., Alles, Michael L., Feng, Philip X.-L.

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Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS2-Interlayer-MoS2 Tunneling Junctions von Pan Wang, Perini, Christopher J., O'Hara, Andrew, Huiqi Gong, Pengfei Wang, En Xia Zhang, Mccurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Pantelides, Sokrates T., Vogel, Eric M.

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Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs von Xin Wan, Baker, Oliver K., McCurdy, Michael W., En Xia Zhang, Zafrani, Max, Wainwright, Simon P., Jun Xu, Han Liang Bo, Reed, Robert A., Fleetwood, Daniel M., Ma, T. P.

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RF Performance of Proton-Irradiated AlGaN/GaN HEMTs von Jin Chen, En Xia Zhang, Cher Xuan Zhang, McCurdy, Michael W., Fleetwood, Daniel M., Schrimpf, Ronald D., Kaun, Stephen W., Kyle, Erin C. H., Speck, James S.

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Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators von Gong, Huiqi, Liao, Wenjun, Zhang, En Xia, Sternberg, Andrew L., McCurdy, Michael W., Davidson, Jim L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Shuvra, Pranoy Deb, Lin, Ji-Tzuoh, McNamara, Shamus, Walsh, Kevin M., Alphenaar, Bruce W., Alles, Michael L.

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Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners von Liao, Wenjun, Zhang, En Xia, Alles, Michael L., Sternberg, Andrew L., Arutt, Charles N., Wang, Dingkang, Zhao, Simeng E., Wang, Pan, McCurdy, Michael W., Xie, Huikai, Fleetwood, Daniel M., Reed, Robert A., Schrimpf, Ronald D.

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Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers von Huiqi Gong, Wenjun Liao, En Xia Zhang, Sternberg, Andrew L., McCurdy, Michael W., Davidson, Jim L., Reed, Robert A., Fleetwood, Daniel M., Schrimpf, Ronald D., Shuvra, Pranoy Deb, Ji-Tzuoh Lin, McNamara, Shamus, Walsh, Kevin M., Alphenaar, Bruce W., Alles, Michael L.

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