The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures von Hammersley, S., Watson-Parris, D., Dawson, P., Godfrey, M. J., Badcock, T. J., Kappers, M. J., McAleese, C., Oliver, R. A., Humphreys, C. J.

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Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures von Asgari, M., Viti, L., Balci, O., Shinde, S. M., Zhang, J., Ramezani, H., Sharma, S., Meersha, A., Menichetti, G., McAleese, C., Conran, B., Wang, X., Tomadin, A., Ferrari, A. C., Vitiello, M. S.

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Structure and strain relaxation effects of defects in InxGa1−xN epilayers von Rhode, S L, Fu, W Y, C-P, Massabuau F, Kappers, M J, McAleese, C, Oehler, F, Humphreys, C J, Dusane, R O, Sahonta S–L

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Improvements in a -plane GaN crystal quality by a two-step growth process von Hollander, J. L., Kappers, M. J., McAleese, C., Humphreys, C. J.

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Dislocation core structures in (0001) InGaN von Rhode, S. L., Horton, M. K., Sahonta, S.-L., Kappers, M. J., Haigh, S. J., Pennycook, T. J., McAleese, C., Humphreys, C. J., Dusane, R. O., Moram, M. A.

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Optical and structural properties of dislocations in InGaN von Massabuau, F. C.-P., Horton, M. K., Pearce, E., Hammersley, S., Chen, P., Zielinski, M. S., Weatherley, T. F. K., Divitini, G., Edwards, P. R., Kappers, M. J., McAleese, C., Moram, M. A., Humphreys, C. J., Dawson, P., Oliver, R. A.

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Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes von Charash, R., Maaskant, P. P., Lewis, L., McAleese, C., Kappers, M. J., Humphreys, C. J., Corbett, B.

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In-plane imperfections in GaN studied by x-ray diffraction von Vickers, M E, Kappers, M J, Datta, R, McAleese, C, Smeeton, T M, Rayment, F D G, Humphreys, C J

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Towards predictive modeling of near-edge structures in electron energy-loss spectra of AlN-based ternary alloys von Holec, D., Rachbauer, R., Kiener, D., Cherns, P. D., Costa, P. M. F. J., McAleese, C., Mayrhofer, P. H., Humphreys, C. J.

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Determination of the composition and thickness of semi-polar and non-polar III-nitride films and quantum wells using X-ray scattering von Vickers, M. E., Hollander, J. L., McAleese, C., Kappers, M. J., Moram, M. A., Humphreys, C. J.

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Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates von Taylor, E, Fang, F, Oehler, F, Edwards, P R, Kappers, M J, Lorenz, K, Alves, E, McAleese, C, Humphreys, C J, Martin, R W

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Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates von Badcock, T. J., Dawson, P., Kappers, M. J., McAleese, C., Hollander, J. L., Johnston, C. F., Rao, D. V. Sridhara, Sanchez, A. M., Humphreys, C. J.

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Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm von Chang, T. Y., Moram, M. A., McAleese, C., Kappers, M. J., Humphreys, C. J.

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Optical polarization anisotropy of a -plane GaN/AlGaN multiple quantum well structures grown on r -plane sapphire substrates von Badcock, T. J., Dawson, P., Kappers, M. J., McAleese, C., Hollander, J. L., Johnston, C. F., Sridhara Rao, D. V., Sanchez, A. M., Humphreys, C. J.

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Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers von Haeberlen, M, Zhu, D, McAleese, C, Kappers, M J, Humphreys, C J

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Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire von Kappers, M.J., Moram, M.A., Sridhara Rao, D.V., McAleese, C., Humphreys, C.J.

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High-efficiency InGaN/GaN quantum well structures on large area silicon substrates von Zhu, D., McAleese, C., Häberlen, M., Kappers, M. J., Hylton, N., Dawson, P., Radtke, G., Couillard, M., Botton, G. A., Sahonta, S.-L., Humphreys, C. J.

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The origin and reduction of dislocations in Gallium Nitride von Oliver, R. A., Kappers, M. J., McAleese, C., Datta, R., Sumner, J., Humphreys, C. J.

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Compositional inhomogeneity of a high-efficiency InxGa1−xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe von Galtrey, M. J., Oliver, R. A., Kappers, M. J., McAleese, C., Zhu, D., Humphreys, C. J., Clifton, P. H., Larson, D., Cerezo, A.

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Strain effects of AlN interlayers for MOVPE growth of crack-free AlGaN and AlN/GaN multilayers on GaN von McAleese, C., Kappers, M.J., Rayment, F.D.G., Cherns, P., Humphreys, C.J.

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