Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics von Li, Qiang, Lau, Kei May

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Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology von Han, Hau-Vei, Lin, Huang-Yu, Lin, Chien-Chung, Chong, Wing-Cheung, Li, Jie-Ru, Chen, Kuo-Ju, Yu, Peichen, Chen, Teng-Ming, Chen, Huang-Ming, Lau, Kei-May, Kuo, Hao-Chung

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Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors von Liu, Zhaojun, Ma, Jun, Huang, Tongde, Liu, Chao, May Lau, Kei

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Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold von Lin, Huang-Yu, Sher, Chin-Wei, Hsieh, Dan-Hua, Chen, Xin-Yin, Chen, Huang-Ming Philip, Chen, Teng-Ming, Lau, Kei-May, Chen, Chyong-Hua, Lin, Chien-Chung, Kuo, Hao-Chung

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Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition von Lu, Xing, Ma, Jun, Jiang, Huaxing, May Lau, Kei

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III–V lasers selectively grown on (001) silicon von Han, Yu, Lau, Kei May

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Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon von Li, Qiang, Ng, Kar Wei, Lau, Kei May

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Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers von Ma, Jun, Zhu, Xueliang, Wong, Ka Ming, Zou, Xinbo, Lau, Kei May

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High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown von Jiang, Huaxing, Zhu, Renqiang, Lyu, Qifeng, Lau, Kei May

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Selectively Grown III-V Lasers for Integrated Si-Photonics von Han, Yu, Xue, Ying, Yan, Zhao, Lau, Kei May

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Improved breakdown characteristics of monolithically integrated III-nitride HEMT–LED devices using carbon doping von Liu, Chao, Liu, Zhaojun, Huang, Tongde, Ma, Jun, May Lau, Kei

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1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current von Jiang, Huaxing, Lyu, Qifeng, Zhu, Renqiang, Xiang, Peng, Cheng, Kai, Lau, Kei May

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1.55-μm Lasers Epitaxially Grown on Silicon von Shi, Bei, Han, Yu, Li, Qiang, Lau, Kei May

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Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance von Lu, Xing, Zhang, Xu, Jiang, Huaxing, Zou, Xinbo, Lau, Kei May, Wang, Gang

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Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces von Ya-Ju Lee, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang, Kar Wai Ng, Kei May Lau, Zu-Po Yang, Chang, A.S.-P., Shawn-Yu Lin

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A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors von Xing Lu, Jun Ma, Yue, C. P., Kei May Lau

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Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric von Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

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Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator von Li, Jie, Xue, Ying, Lin, Liying, Xing, Zengshan, Wong, Kam Sing, Lau, Kei May

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Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters von Cai, Yuefei, Zou, Xinbo, Liu, Chao, Lau, Kei May

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Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs von Zhu, Renqiang, Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

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