Exploration of Power Device Reliability Using Compact Device Models and Fast Electrothermal Simulation von Bryant, A.T., Mawby, P.A., Palmer, P.R., Santi, E., Hudgins, J.L.

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Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance von Zhang, L., Dai, T., Gammon, P.M., Shah, V.A., Mawby, P.A., Antoniou, M.

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Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications von Gammon, P.M., Chan, C.W., Gity, F., Trajkovic, T., Kilchytska, V., Fan, L., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P.A., Gardner, J.W.

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Modelling SiC MOSFET module threshold voltage (V) and impact of parallel device ΔV on short circuit robustness von Deb, A., Gonzalez, J. Ortiz, Jahdi, S., Taha, M., Mawby, P.A., Alatise, O.

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Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide von Koh, A, Kestle, A, Wright, C, Wilks, S.P, Mawby, P.A, Bowen, W.R

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Highly effective junction isolation structures for PICs based on standard CMOS Process von Starke, T.K.H., Holland, P.M., Hussain, S., Jamal, W.M., Mawby, P.A., Igic, P.M.

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The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal von Renz, A.B., Vavasour, O.J., Gammon, P.M., Li, F., Dai, T., Antoniou, M., Baker, G.W.C., Bashar, E., Grant, N.E., Murphy, J.D., Mawby, P.A., Shah, V.A.

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Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model von Igic, P.M., Mawby, P.A., Towers, M.S., Jamal, W., Batcup, S.

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Mechanical stress related instabilities in silicon under metal coverage von Manic, D., Igic, P.M., Mawby, P.A., Haddab, Y., Popovic, R.S.

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Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation von Jennings, M.R., Li, Fan, Thomas, S.M., Sharma, Yogesh K., Fisher, C.A., Hamilton, Dean, Pérez-Tomás, A., Mawby, P.A.

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Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications von Gammon, Peter Michael, Chan, Chun W., Shah, Vishal Ajit, Fisher, C.A., Myronov, Maksym, Jennings, Michael R., Pérez-Tomás, A., Mawby, P.A., Chen, Han

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A comparison of IGBT models for use in circuit design von Githiari, A.N., Gordon, B.M., McMahon, R.A., Zhong-Min Li, Mawby, P.A.

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The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors von Thomas, Stephen M., Fisher, C.A., Jennings, Michael R., Sharma, Y.K., Mawby, P.A.

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Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives von Donnellan, B.T., Roberts, G.J., Mawby, P.A., Bryant, A.T.

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Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC von Jennings, M.R., Pérez-Tomás, A., Davies, M., Walker, D., Zhu, L., Losee, P., Huang, W., Balachandran, S., Guy, O.J., Covington, J.A., Chow, T.P., Mawby, P.A.

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Study of a novel Si/SiC hetero-junction MOSFET von Chen, L., Guy, O.J., Jennings, M.R., Igic, P., Wilks, S.P., Mawby, P.A.

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Exploration of Power Device Reliability using Compact Device Models and Fast Electro-Thermal Simulation von Bryant, A.T., Mawby, P.A., Palmer, P.R., Santi, E., Hudgins, J.L.

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Theory of a novel voltage-sustaining layer for power devices von Chen, X.B., Mawby, P.A., Board, K., Salama, C.A.T.

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SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator von PEREZ-TOMAS, A, JENNINGS, M. R, GAMMON, P. M, ROBERTS, G. J, MAWBY, P. A, MILLAN, J, GODIGNON, P, MONTSERRAT, J, MESTRES, N

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Fast Thermal Models for Power Device Packaging von Swan, I.R., Bryant, A.T., Mawby, P.A.

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