A Lifetime Estimation Technique for Voltage Source Inverters von Hui Huang, Mawby, P. A.

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Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling von Chan, C. W., Li, F., Sanchez, A., Mawby, P. A., Gammon, P. M.

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A Fast Loss and Temperature Simulation Method for Power Converters, Part II: 3-D Thermal Model of Power Module von Swan, I., Bryant, A., Mawby, P. A., Ueta, T., Nishijima, T., Hamada, K.

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A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices von Dai, T., Zhang, L., Vavasour, O., Renz, A. B., Shah, V. A., Antoniou, M., Mawby, P. A., Gammon, P. M.

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Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization von Baker, G. W. C., Gammon, P. M., Renz, A. B., Vavasour, O., Chan, C. W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V. A., Mawby, P. A., Antoniou, M.

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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment von Renz, A. B., Shah, V. A., Vavasour, O. J., Bonyadi, Y., Li, F., Dai, T., Baker, G. W. C., Hindmarsh, S., Han, Y., Walker, M., Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A., Gammon, P. M.

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Optimization of 1700-V 4H-SiC Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization von Baker, G. W. C., Chan, C., Renz, A. B., Qi, Y., Dai, T., Li, F., Shah, V. A., Mawby, P. A., Antoniou, M., Gammon, P. M.

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Field-effect mobility temperature modeling of 4H-SiC metal-oxide-semiconductor transistors von Pérez-Tomás, A., Brosselard, P., Godignon, P., Millán, J., Mestres, N., Jennings, M. R., Covington, J. A., Mawby, P. A.

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Interfacial properties of thermally oxidized Ta2Si on Si von Pérez-Tomás, A., Jennings, M. R., Mawby, P. A., Millán, J., Godignon, P., Montserrat, J., Rossinyol, E., Vennegues, P., Stoemenos, J.

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Simulations of a Lateral PiN Diode on Si/SiC Substrate for High Temperature Applications von Gammon, Peter Michael, Chan, Chun W., Shah, Vishal Ajit, Fisher, C.A., Myronov, Maksym, Jennings, Michael R., Pérez-Tomás, A., Mawby, P.A., Chen, Han

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Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide von Koh, A, Kestle, A, Wright, C, Wilks, S.P, Mawby, P.A, Bowen, W.R

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Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation von Jennings, M.R., Li, Fan, Thomas, S.M., Sharma, Yogesh K., Fisher, C.A., Hamilton, Dean, Pérez-Tomás, A., Mawby, P.A.

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Analysis of inhomogeneous Ge/SiC heterojunction diodes von Gammon, P. M., Pérez-Tomás, A., Shah, V. A., Roberts, G. J., Jennings, M. R., Covington, J. A., Mawby, P. A.

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Study of 4H–SiC trench MOSFET structures von Chen, L., Guy, O.J., Jennings, M.R., Igic, P., Wilks, S.P., Mawby, P.A.

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Highly effective junction isolation structures for PICs based on standard CMOS Process von Starke, T.K.H., Holland, P.M., Hussain, S., Jamal, W.M., Mawby, P.A., Igic, P.M.

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Si/SiC bonded wafer: A route to carbon free SiO2 on SiC von Pérez-Tomás, A., Lodzinski, M., Guy, O. J., Jennings, M. R., Placidi, M., Llobet, J., Gammon, P. M., Davis, M. C., Covington, J. A., Burrows, S. E., Mawby, P. A.

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The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors von Thomas, Stephen M., Fisher, C.A., Jennings, Michael R., Sharma, Y.K., Mawby, P.A.

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Enhanced Field Effect Mobility on 4H-SiC by Oxidation at 1500°C von Thomas, S. M., Sharma, Y. K., Crouch, M. A., Fisher, C. A., Perez-Tomas, A., Jennings, M. R., Mawby, P. A.

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Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications von Gammon, P.M., Chan, C.W., Gity, F., Trajkovic, T., Kilchytska, V., Fan, L., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P.A., Gardner, J.W.

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Report on 4H–SiC JTE Schottky diodes von Chen, L., Guy, O.J., Doneddu, D., Batcup, S.G.J., Wilks, S.P., Mawby, P.A., Bouchet, T., Torregrosa, F.

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